• 제목/요약/키워드: trichlorosilane

검색결과 23건 처리시간 0.021초

삼염화실란 정제공정에서의 분리벽형 증류탑 적용 (Application of a Divided-Wall Column for the Trichlorosilane Refining Process)

  • 홍승택;이문용
    • 청정기술
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    • 제16권1호
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    • pp.64-70
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    • 2010
  • 본 연구에서는 상용 폴리실리콘 제조공정 중 삼염화실란 정제공정에 사용되는 증류탑에 대해 분리벽형 증류탑을 적용하는 방안을 제안하였다. 상용 전산모사 프로그램(HYSYS)을 통해 기존의 단순 증류탑을 사용한 정제공정과 분리벽형 증류탑으로 대체한 공정을 각각 전산모사 하여 같은 순도와 수율로 삼염화실리콘을 정제할 때 증류탑에서 소모되는 에너지와 투자비용 효과를 비교 분석하였다. 그 결과, 분리벽형 증류탑을 적용한 정제공정이 기존 정제공정에 비해 약 61%의 에너지 절감 효과와 58%의 투자비용 절감효과를 가지는 것으로 확인되었다.

근적외선 분광법을 이용한 고순도 SiCI4 중의 미량 불순물 SiHCI3의 분석 (Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy)

  • 박찬조;이석근
    • 분석과학
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    • 제15권1호
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    • pp.87-90
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    • 2002
  • The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 % in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

폴리실리콘 제조 공정에서 화학물질 누출 시 피해범위에 관한 연구 (A Study on the Damage Range of Chemical Leakage in Polysilicon Manufacturing Process)

  • 우종운;신창섭
    • 한국가스학회지
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    • 제22권4호
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    • pp.55-62
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    • 2018
  • 지구온난화로 인하여 태양광 발전에 대한 관심이 커지고 있다. 이에 따라 태양전지를 만드는 핵심물질인 폴리실리콘의 수요도 나날이 증가하고 있으며 시장이 커짐에 따라 생산공정에서 크고 작은 사고들이 발생하고 있다. 그 예로 2013년 상주시의 폴리실리콘 제조공장에서 염산이 누출되었고 2014년에는 여수시의 폴리실리콘 제조공장에서 화재가 발생하였으며, 2015년에는 군산시의 폴리실리콘 제조공장에서 STC(Silicon Tetrachloride)가 누출되었다. 이러한 누출 사고들은 사업장 내부에만 영향을 주는 것이 아니라 인근지역까지 영향을 줄 수 있다는 것이 특징이다. 따라서 본 연구에서는 폴리실리콘 제조공정에서 사용되는 위험물질을 파악하고, 최악의 누출 시나리오를 적용했을 때 누출량과 피해범위를 정량적으로 예측하였다. 그 결과 폭발에 따른 피해거리는 726 m로 예측되었고, 독성에 대한 피해거리는 4,500 m로 예측되었다. 그리고 TCS(Trichlorosilane), STC(Silicon Tetrachloride), DCS(Dichlorosilane)가 누출되어 공기 중의 수분과 반응하여 HCl이 생성될 경우 피해거리는 최대 5.7 km까지로 예측되었다.

Synthesis of Isopropyldichlorosilane by Direct Process

  • Lim, Weon-Cheol;Cho, Joo-Hyun;Han, Joon-Soo;Yoo, Bok-Ryul
    • Bulletin of the Korean Chemical Society
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    • 제28권10호
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    • pp.1661-1664
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    • 2007
  • Direct reaction of elemental silicon with a gaseous mixture of isopropyl chloride (1) and hydrogen chloride in the presence of copper catalyst using a stirred bed reactor equipped with a spiral band agitator gave isopropyldichlorosilane having a Si-H bond (2a) as a major product and isopropyltrichlorosilane (2b) along with chlorosilanes, trichlorosilane and tetrachlorosilane. A process for production of 2a was maximized using the 1:0.5 mole ratio of 1 to HCl and smaller size of elemental silicon at a reaction temperature of 220 °C. When a reaction was carried out by feeding a gaseous mixture of 1 [12.9 g/h (0.164 mol/h)] and HCl [2.98 g/h (0.082 mol/h)] to a contact mixture of elemental silicon (360 g) and copper (40 g) under the optimum condition for 45 h, 2a among volatile products kept up about 82 mol % until 35 h and then slowly decreased down 68 mol % in 45 h reaction. Finally 2a was obtained in 38% isolated yield (based on 1 used) with an 85% consumption of elemental silicon in a 45 h reaction. In addition to 2a, 2b was obtained as minor product along with chlorosilanes, trichlorosilane, and tetrachlorosilane. The decomposition of 1 was suppressed and the production of 2a improved by adding HCl to 1.

중합 박막 트랜지스터를 위한 $Ta_2O_5$ 유전체 접합의 자기조립 단분자막의 특성 (Characteristics of Self assembled Monolayer as $Ta_2O_5$ Dielectric Interface for Polymer TFTs)

  • 최광남;곽성관;정관수;김동식
    • 전자공학회논문지 IE
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    • 제43권1호
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    • pp.1-4
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    • 2006
  • 중합 박막 트랜지스터의 특성은 유기 반도체에 앞서 게이트유전체 표면의 화학적 변형에 의해 조절 가능하다. 화학적 처리는 자기조립 단분자막 형태의 유전물질과 함께 파생된 tantalum pentoxide($Ta_2O_5$) 표면으로 구성된다. Octadecyl trichlorosilane(OTS), hexamethyldisilazane (HMDS), aminopropyltreithoxysilane(ATS) 자기조립 단분자막의 성장은 중합체로 결합된 poly-3-hexylthiophene(P3HT)의 분위기에서 $0.01\sim0.06cm2/V{\cdot}s$의 이동도로 진행되었다. 이동도 향상 메커니즘은 중합체와 자기조립 단분자막 사이의 분자 상호작용에 영향을 미치는 것으로 확인하였다. 이는 향후 ploymer TFT의 유전박막 중 하나로서 유용하게 사용 될 것이다.

열 나노임프린트 리소그래피에서 사용되는 스탬프와 폴리머 재료 사이의 점착 특성 (Adhesion Characteristics between Stamp and Polymer Materials Used in Thermal Nanoimprint Lithography)

  • 김광섭;강지훈;김경웅
    • Tribology and Lubricants
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    • 제22권4호
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    • pp.182-189
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    • 2006
  • In this paper, the adhesion characteristics between a fused silica without or with an anti-sticking layer and a thermoplastic polymer film used in thermal NIL were investigated experimentally in order to identify the release performance of the anti-sticking layer. The anti-sticking layers were derived from fluoroalkylsilanes, (1H, 1 H, 2H, 2H-perfluorooctyl)trichlorosilane ($F_{13}-OTS$) and (3, 3, 3-trifluoropropyl)trichlorosilane (FPTS), and coated on the silica surface in vapor phase. The commercial polymers, mr-I 7020 and 8020 (micro resist technology, GmbH), for thermal NIL were spin-coated on Si substrate with a rectangular island which was fabricated by conventional microfabrication process to achieve small contact area and easy alignment of flat contact sur- faces. Experimental conditions were similar to the process conditions of thermal NIL. When the polymer film on the island was separated from the silica surface after imprint process, the adhesion force between the silica surface and the polymer film was measured and the surfaces of the silica and the polymer film after the separation were observed. As a result, the anti-sticking layers remarkably reduced the adhesion force and the surface damage of polymer film and the chain length of silane affects the adhesion characteristics. The anti-sticking layers derived from FPTS and $F_{13}-OTS$ reduced the adhesion force per unit area to 38% and 16% of the silica sur-faces without an anti-sticking layer, respectively. The anti-sticking layer derived from $F_{13}-OTS$ was more effective to reduce the adhesion, while both of the anti-sticking layers prevented the surface damages of the polymer film. Finally, it is also found that the adhesion characteristics of mr-I 7020 and mr-I 8020 polymer films were similar with each other.

AFM을 이용한 MEMS/NEMS 공정용 재료의 트라이볼로지 특성에 관한 연구 (A Study on Tribological Characteristics of Materials for MEMS/NEMS Using Chemically Modified AFM tip)

  • 허정철;김광섭;김경웅
    • Tribology and Lubricants
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    • 제24권2호
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    • pp.63-71
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    • 2008
  • Friction and adhesion tests were conducted to investigate tribological characteristics of materials for MEMS/NEMS using atomic force microscope (AFM). AFM Si tips were chemically modified with a self-assembled monolayer (SAM) derived from trichlorosilane like octadecyltrichlorosilane (OTS) and (1H, 1H, 2H, 2H-perfluorooctyl) trichlorosilane (FOTS), and various materials, such as Si, Al, Au, Cu, Ti and PMMA films, were prepared for the tests. SAMs were coated on Si wafer by dipping method prior to AFM tip to determine a proper dipping time. The proper dipping time was determined from the measurements of contact angle, surface energy and thickness of the SAMs. AFM tips were then coated with SAMs by using the same coating condition. Friction and adhesion forces between the AFM Si tip modified with SAM and MEMS/NEMS materials were measured. These forces were compared to those when AFM tip was uncoated. According to the results, after coating OTS and FOTS, the friction and adhesion forces on all materials used in the tests decreased; however, the effect of SAM on the reduction of friction and adhesion forces could be changed according to counterpart materials. OTS was the most effective to reduce the friction and adhesion forces when counterpart material was Cu film. In case of FOTS, friction and adhesion forces decreased the most effectively on Au films.