• 제목/요약/키워드: tri-layer channel

검색결과 6건 처리시간 0.024초

Channel과 gate 구조에 따른 산화물 박막트랜지스터의 전기적 특성 연구 (Effect of Channel and Gate Structures on Electrical Characteristics of Oxide Thin-Film Transistors)

  • 공희성;조경아;김재범;임준형;김상식
    • 전기전자학회논문지
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    • 제26권3호
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    • pp.500-505
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    • 2022
  • 본 연구에서는 새로운 구조의 dual gate tri-layer split channel 박막트랜지스터를 제작하였다. 전류 구동 능력을 향상시키기 위해 액티브 층의 양쪽에 게이트를 형성하였고 전하이동도를 증가시키기 위하여 액티브 층에서 채널이 형성되는 구간인 첫번째 층과 세번째 층에 전도성이 높은 ITO 층을 배치하였다. 추가적으로 분할 채널을 이용하여 채널의 series 저항을 낮추면서 분할한 채널의 측면에서도 accumulation을 유도하여 전하이동도를 향상시켰다. 기존의 single gate a-ITGZO 박막트랜지스터가 15 cm2/Vs의 전하이동도를 가지는 반면 dual gate tri-layer split channel 박막트랜지스터는 134 cm2/Vs의 높은 전하이동도를 가졌다.

하드웨어왜곡과 불완전한 채널상태정보가 물리계층보안에 미치는 영향 (The Impact of Hardware Impairments and Imperfect Channel State Information on Physical Layer Security)

  • 심규성;도 트리 뉴;안병구
    • 전자공학회논문지
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    • 제53권4호
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    • pp.79-86
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    • 2016
  • 물리계층보안은 신호의 물리적 특성을 이용하여 정보를 보호하는 보안 기법이다. 현재 이에 대한 연구가 활발히 진행 중이지만 해결해야할 다음과 같은 문제점들이 존재한다. 도청자는 자신의 존재를 숨기기 위해서 자신의 채널상태정보를 다른 합법적인 노드와 공유하지는 않는다. 그리고 노드가 신호를 전송할 때 하드웨어 왜곡이 발생하지만 많은 연구들은 노드 모델들이 이상적인 것으로 가정을 하고, 하드웨어 왜곡문제를 고려하지 않고 있다. 이와 같은 문제점들을 해결하기 위한 본 논문의 주요한 특징 및 기여도는 다음과 같다. 첫째, 도청자의 채널상태정보를 얻기 위해서 조력자노드를 합법적인 노드주변에 설치하고, 조력자노드의 채널상태정보를 이용하여 노드모델에서 하드웨어 왜곡을 고려한다. 둘째, 제안된 시스템 모델의 인터셉트 확률에 대한 Closed-Form Expression을 제시한다. 제안된 시스템의 성능평가를 위해서 다양한 시뮬레이션를 통하여 제안된 시스템 모델의 물리계층보안에 미치는 영향을 알아본 결과, 불완전한 채널상태정보는 인터셉트 확률에는 영향을 미치지 못한 반면에, 불완전한 노드모델의 경우, 인터셉트 확률, 에르고딕 시크리스 용량과 보안채널용량에 영향을 준다는 것을 보여준다.

Remote O2 plasma functionalization for integration of uniform high-k dielectrics on large area synthesized few-layer MoSe2

  • Jeong, Jaehun;Choi, Yoon Ho;Park, Dambi;Cho, Leo;Lim, Dong-Hyeok;An, Youngseo;Yi, Sum-Gyun;Kim, Hyoungsub;Yoo, Kyung-Hwa;Cho, Mann?Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.281.1-281.1
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    • 2016
  • Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

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ALD 공정을 이용한 플렉시블 유기태양전지용 투명전극 형성 (Fabrication of a Transparent Electrode for a Flexible Organic Solar Cell in Atomic Layer Deposition)

  • 송근수;김형태;유경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.121.2-121.2
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    • 2011
  • Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

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합성수지 메탈시트와 3면겹침용 채움재가 공법화된 합성고분자계 시트를 이용한 건식화 방수기술에 대한 실험적 연구 (Experimental Study on Dry Waterproofing Technology Using Synthetic Polymer Sheet Comprised of Synthetic Resin Metal Sheets and Tri-Layered Filler)

  • 구자응;김범수;이정훈;송제영;오상근
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2017년도 추계 학술논문 발표대회
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    • pp.139-140
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    • 2017
  • This technology employs a method of forming a single-ply PLUS waterproofing sheet layer comprised of applying a single-ply synthetic polymer layer on a vibrating structure (steel frame, RC) or an inclined surface by using a T joint lap-filling coil and an embedded metal coated sheet. The T - joint reinforcing lap-filling coil was used to block the ingress channel of the rainwater by applying the material in the vulnerable area where the three sides of the waterproof sheet overlapped. Conventional waterproofing techniques have a problem in that the waterproof sheet is pierced because the end portion of the waterproof sheet applied to the vertical portion is fixed by a nail, and the sealant applied to the end portion of the sheet cannot easily secure long-term waterproof durability due to the influence of the external environment. Therefore, the developed technology secured the waterproof durability against the vertical part by using the embedded metal sheet. In addition, automatic hot-air fusing is used to improve the quality of waterproof construction and point fixation method using fixed hardware. This is a technology that is not significantly restricted in the high degradation level regions of domestic waterproof construction environments in Korea such as low-temperature environment, wet floor.

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Ag grid와 전도성 고분자를 이용한 인쇄기반 OPV용 투명전극 형성 (Fabrication of Transparent Electrode Film for Organic Photovoltaic using Ag grid and Conductive Polymer)

  • 유종수;김정수;윤성만;김동수;김도진;조정대
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.116.1-116.1
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    • 2011
  • Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

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