• 제목/요약/키워드: trapping center

검색결과 112건 처리시간 0.026초

The Relationship Between Hydrogen Trapping Behavior and SSCC Suceptibility of API X60/65 Grade Steels

  • Lee, Jae Myung;Kim, Jin Suk;Kim, Kyoo Young
    • Corrosion Science and Technology
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    • 제2권3호
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    • pp.109-116
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    • 2003
  • It is well known that SSCC (sulfide stress corrosion cracking) is caused by drastic ingression of hydrogen during the service and accumulation of hydrogen near the potential crack initiation site in the material. It is important to characterize the hydrogen trapping behavior to evaluate the service performance of the high strength pipeline steels. In this study. the relationship between the hydrogen trapping behavior and SSCC susceptibility is evaluated in terms of alloy composition, microstructure and carbide behavior. The hydrogen trapping behavior was measured by electrochemical hydrogen permeation test cell (Devanathan cell). The SSCC susceptibility is evaluated by constant extension rate test and constant strain lest method. The hydrogen trapping behavior is affected greatly by microstructure and nature of carbide particles. The fine TiC, and NbC in the matrix of ferritic structure acts as strong irreversible trap sites whereas the bainitic structure acts as reversible trap site. The SSCC susceptibility is closely related to not only the hydrogen trapping behavior but also the loading condition. As the activity of reversible trap site increases, SSCC susceptibility decreases under static loading condition below yield strength, whereas SSCC susceptibility increases under dynamic loading condition or above yield strength. As the activity of irreversible trap site increases. SSCC susceptibility increases regardless of loading condition. It is cased by the mixed effect of dislocation on hydrogen diffusion and trapping behavior.

한시적 세포포집 구조물을 이용한 다세포 스페로이드 형성 및 추출칩 (A Multicellular Spheroid Formation and Extraction Chip Using Removable Cell Trapping Barriers)

  • 진혜진;김태윤;조영호;구진모;김진국;오용수
    • 대한기계학회논문집A
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    • 제35권2호
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    • pp.131-134
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    • 2011
  • 본 논문에서는 한시적 세포포집 구조물을 이용한 다세포 스페로이드의 형성 및 추출칩을 제안하였다. 종래의 웰 플레이트와 플라스크는 작은 스페로이드 형성이 어렵고, 기존 마이크로칩은 고정된 세포포집 구조물을 이용하여 스페로이드 추출이 어려운 단점이 있다. 반면, 제안된 칩은 한시적 세포포집 구조물을 이용하여 스페로이드의 형성과 추출이 모두 용이한 장점이 있다. 50kPa 의 박막압력으로 형성된 세포포집 구조물에 145~155Pa 의 세포입력압력으로 유입되는 세포를 포집한 후, 24 시간 배양하여 스페로이드를 형성하였다. 또한, 박막압력 제거 후 5kPa 의 세포입력압력으로 추출된 스페로이드의 지름과 활성도는 각각 $197{\pm}11.7Bm$, $80.3{\pm}7.7%$로 측정되었다. 제안된 칩은 스페로이드의 균일한 형성과 안정적 추출이 용이하여 스페로이드의 후처리에 적용될 수 있다.

Characterization of carrier transport and trapping in semiconductor films during plasma processing

  • Nunomura, Shota;Sakata, Isao;Matsubara, Koji
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.391-391
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    • 2016
  • The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

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광 포획 태양전지 모듈 커버용 유리기판 기술 현황 (Current status of light trapping in module cover glass for PV module)

  • 박형식;정재성;신명훈;김선보;이준신
    • Current Photovoltaic Research
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    • 제4권3호
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    • pp.119-123
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    • 2016
  • We discussed various cover glass substrates available for photovoltaic (PV) modules, and investigated the fabrication methods of light trapping structures for the efficiency enhancement of PV modules: wet and dry etching or laser and direct patternings. We also introduced the analysis of haze at etched glass surfaces as a function of wavelength and also presented a anti-reflection coating technology for PV module.

Hydrogen Diffusion in APX X65 Grade Linepipe Steels

  • Park, Gyu Tae;Koh, Seong Ung;Kim, Kyoo Young;Jung, Hwan Gyo
    • Corrosion Science and Technology
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    • 제5권4호
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    • pp.117-122
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    • 2006
  • Hydrogen permeation measurements have been carried out on API X65 grade linepipe steel. In order to study the effect of steel microstructure on hydrogen diffusion behavior in linepipe steel, the accelerated cooling condition was applied and then three different kinds of microstructures were obtained. Hydrogen permeation measurement has been performed in reference to modified ISO17081 (2004) and ZIS Z3113 method. Hydrogen trapping parameters in these steels were evaluated in terms of the effective diffusivity ($D_{eff}$), permeability ($J_{ss}L$) and the amount of diffusible hydrogen. In this study, microstructures which affect both hydrogen trapping and diffusion were degenerated pearlite (DP), acicular ferrite (AF), bainite and martensite/austenite constituents (MA). The low $D_{eff}$ and $J_{ss}L$ mean that more hydrogen can be trapped reversibly or irreversibly and the corresponding steel microstructure is dominant hydrogen trapping site. The large amount of diffusible hydrogen means that corresponding steel microstructure is predominantly reversible. The results of this study suggest that the hydrogen trapping efficiency increases in the order of DP, bainite and AF, while AF is the most efficient reversible trap.

New Method for Combined Quantitative Assessment of Air-Trapping and Emphysema on Chest Computed Tomography in Chronic Obstructive Pulmonary Disease: Comparison with Parametric Response Mapping

  • Hye Jeon Hwang;Joon Beom Seo;Sang Min Lee;Namkug Kim;Jaeyoun Yi;Jae Seung Lee;Sei Won Lee;Yeon-Mok Oh;Sang-Do Lee
    • Korean Journal of Radiology
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    • 제22권10호
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    • pp.1719-1729
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    • 2021
  • Objective: Emphysema and small-airway disease are the two major components of chronic obstructive pulmonary disease (COPD). We propose a novel method of quantitative computed tomography (CT) emphysema air-trapping composite (EAtC) mapping to assess each COPD component. We analyzed the potential use of this method for assessing lung function in patients with COPD. Materials and Methods: A total of 584 patients with COPD underwent inspiration and expiration CTs. Using pairwise analysis of inspiration and expiration CTs with non-rigid registration, EAtC mapping classified lung parenchyma into three areas: Normal, functional air trapping (fAT), and emphysema (Emph). We defined fAT as the area with a density change of less than 60 Hounsfield units (HU) between inspiration and expiration CTs among areas with a density less than -856 HU on inspiration CT. The volume fraction of each area was compared with clinical parameters and pulmonary function tests (PFTs). The results were compared with those of parametric response mapping (PRM) analysis. Results: The relative volumes of the EAtC classes differed according to the Global Initiative for Chronic Obstructive Lung Disease stages (p < 0.001). Each class showed moderate correlations with forced expiratory volume in 1 second (FEV1) and FEV1/forced vital capacity (FVC) (r = -0.659-0.674, p < 0.001). Both fAT and Emph were significant predictors of FEV1 and FEV1/FVC (R2 = 0.352 and 0.488, respectively; p < 0.001). fAT was a significant predictor of mean forced expiratory flow between 25% and 75% and residual volume/total vital capacity (R2 = 0.264 and 0.233, respectively; p < 0.001), while Emph and age were significant predictors of carbon monoxide diffusing capacity (R2 = 0.303; p < 0.001). fAT showed better correlations with PFTs than with small-airway disease on PRM. Conclusion: The proposed quantitative CT EAtC mapping provides comprehensive lung functional information on each disease component of COPD, which may serve as an imaging biomarker of lung function.

실리콘 박막 태양전지에서 광 포획(light trapping) 개선에 관한 연구 (STUDY ON THE IMPROVEMENT OF LIGHT TRAPPING IN THE SILICON-BASED THIN-FILM SOLAR CELLS)

  • 전상원;이정철;안세진;윤재호;김석기;박병옥;송진수;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2005년도 춘계학술대회
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    • pp.192-195
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    • 2005
  • The silicon thin film solar cells were fabricated by 13.56 MHz PECVD (Plasma-Enhanced Chemical-Vapor Deposition) and 60 MHz VHF PECVD (Very High-Frequency Plasma-Enhanced Chemical-Vapor Deposition). We focus on textured ZnO:Al films prepared by RF sputtering and post deposition wet chemical etching and studied the surface morphology and optical properties. These films were optimized the light scattering properties of the textured ZnO:Al after wet chemical etching. Finally, the textured ZnO:Al films were successfully applied as substrates for silicon thin films solar cells. The efficiency of tandem solar cells with $0.25 cm^2$ area was $11.8\%$ under $100mW/cm^2$ light intensity. The electrical properties of tandem solar cells were measured with solar simulator (AM 1.5, $100 mW/cm^2)$ and spectral response measurements.

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Hafnium Oxide를 Trapping Layer로 적용한 Fin-Type SOHOS 플래시 메모리 특성연구 (Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer)

  • 박정규;오재섭;양승동;정광석;김유미;윤호진;한인식;이희덕;이가원
    • 한국전기전자재료학회논문지
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    • 제23권6호
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    • pp.449-453
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    • 2010
  • In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

사중극자 유전영동 트랩에서의 입자의 동특성에 관한 연구 (Analysis of Particle Motion in Quadrupole Dielectrophoretic Trap with Emphasis on Its Dynamics Properties)

  • 니치 찬드라세카란;이은희;박재현
    • 대한기계학회논문집B
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    • 제38권10호
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    • pp.845-851
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    • 2014
  • 유전영동(DEP)이란 비균질의 전기장과 그에 따라 입자 내부에 형성되는 극성힘에 의해 용매에 분산되어 있는 입자에 야기되는 운동을 의미하며, 세포, 바이러스, 나노입자 등의 트래핑, 입자분류, 셀분리 등과 같은 다양한 생물학적 응용에 이용되어 왔다. 지금까지 유전영동트랩에 대한 해석은 주기평균 ponderomotive force 에 기반한 정특성 해석이 주를 이루고 있으며, 동특성에 대해서는 많은 연구가 이루어져 있지 않다. 이는 지금까지 유전영동트랩이 적용된 입자들의 크기가 상대적으로 매우 크기 때문으로, 분석입자의 크기가 매우 작은 나노단위 분석에서는 적절하지 않다. 본 연구에서는, 다양한 시스템 파라미터들에 대한 트래핑의 동역학적 반응 및 그들의 트래핑 안정성에 대한 영향을 심도깊게 관찰하고자 한다. 특히, 입자의 전도율에 따른 입자의 동특성의 변화 또한 관찰하고자 한다.

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

  • Senthilkumar, V.;Kim, Yong Soo
    • Transactions on Electrical and Electronic Materials
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    • 제16권5호
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    • pp.290-292
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    • 2015
  • We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 × 103 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.