• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.355-365
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• 1991

New definition for the interaction of flames is introduced and interacting turbulent diffusion flames issuing from two rectangular nozzles are investigated on the basis of the definition. Theoretical study through numerical model is carried out and experiment for validation is conducted. The characteristics of interaction due to the variation of major parameters such as nozzle spacing, Reynolds number and nozzle aspect ratio are studied. Results show that strong interaction occurs for small nozzle spacing, small Reynolds number and large aspect ratio. In order of their magnitude, the intensity of interactions on the individual transport mechanism is momentum, heat and mass. It is also found that interaction makes flames longer, tilted and finally merged. Increase of velocities and temperature, decrease of oxygen concentration and depression of turbulence are occurred in the region between flames.

• Journal of the Korean Chemical Society
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• v.34 no.4
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• pp.377-383
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• 1990

Three kinds of hydrogel membranes were prepared by the copolymerization of 2-hydroxyethylmethacrylate (HEMA) with acrylamide, N, N-dimethylamide and methylmethacrylate in the presence of solvent and crosslinker respectively. The equilibrium water content, relative permeability and partition coefficient of the membranes for alcohol solutes were measured. It has been found that the permeation of organic solute occurs through the water-filled regions in the hydrogel membrane, and that the gpermeability coefficient of organic solute depends on the molecular size. But the permeability of organic solute was controlled by the interaction of solute-membrane at the low water content. By the partition data, it has been shown that the partition of solute is only controlled by hydrophobic interaction between solute and membrane. The diffusion coefficient data were interpreted on the basis of water-solute interaction. It has been found that the diffusion of organic solute is determined by the free volume of water in the membrane, and that hardly depends on polarity-polarizability and hydrogen bonding ability between water and solute.

• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.305-309
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• 2020

In this study, a series of ionic liquids based electrolytes for lithium batteries were prepared by mixing the anion functionalized ionic liquid, [DMIm][MPEGP] (1,3-dimethylimidazolium (2-methoxy(2-ethoxy(2-ethoxy)))-ethylphosphite), with the lithium salt, LiTf₂N (lithium bis(trifluoromethanesulfonyl)imide), and the concentration of lithium salt was varied between 0 and 3.0 molar ratio. We observed the ionic mixtures became opaque and spontaneously aggregated to form a thermotropic ionic liquid crystal. Extensive spectroscopic examinations of the ionic liquid crystals were carried out to investigate their self-organized structures and the ion transport behavior depending on the concentration of lithium salt. An increase in the ionic conductivity was observed for the ionic liquid crystals related to the ability to form ion diffusion pathways along the ordered structures, resulting in improved electrochemical performances of lithium batteries.

• Nuclear Engineering and Technology
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• v.27 no.2
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• pp.176-188
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• 1995

A particle tracking scheme was developed in order to model radionuclide transport through a tortuous flow Held in a rock fracture. The particle tacking method may be used effectively in a heterogeneous flow field such as rock fracture. The parallel plate representation of the single fracture fails to recognize the spatial heterogeneity in the fracture aperture and thus seems inadequate in describing fluid movement through a real fracture. The heterogeneous flow field une modeled by a variable aperture channel model after characterizing aperture distribution by a hydraulic test. To support the validation of radionuclide transport models, a radionuclide migration experiment was performed in a natural fracture of granite. $^3$$H_2O$ and $^{131}$ I are used as tracers. Simulated results were in agreement with experimental result and therefore support the validity of the transport model. Residence time distributions display multipeak curves caused by the fast arrival of solutes traveling along preferential fracture channels and by the much slower arrival of solutes following tortous routes through the fracture. Results from the modelling of the transport of nonsorbing tracer through the fracture show that diffusion into the interconnected pore space in the rock mass has a significant effect on retardation.

• Journal of Pharmaceutical Investigation
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• v.27 no.1
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• pp.57-64
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• 1997

$Amino-{\beta}-lactam$ antibiotics are absorbed by the dipeptide transporter in the small intestine. These uptakes are coupled to a proton influx. The inward proton gradient is partly induced by the $Na^+/H^+$ exchanger and calcium ion is involved in control of this antiport. Interaction between ampicillin which is one of the $Amino-{\beta}-lactam$ antibiotics and nifedipine which is one of calcium channel blocking agents was studied in rats in vivo and with rabbit jejunum mounted on the Sweetana/Grass diffusion cells in vitro. Bioavailability of ampicillin was increased significantly when nifedipine was co-administered orally in rats. There were no differences in the distribution phase and the elimination phase when ampicillin was given either alone or with nifedipine intravenously. Conditions for in vitro experiments were determined. The lift rate of $O_2/CO_2$ gas was controlled to 3 bubbles/sec and ampicillin was stable in the Kreb's buffer at pH 6.0. Absorption of ampicillin was the greatest when the completely-stripped serosal membrane was used. Transport of ampicillin from mucosal to serosal side in the rabbit jejunum was enhanced by 32% in the presence of nifedipine (p=0.059). Above results suggest that nifedipine might increase the plasma level of ampicillin via the improved absorption in the intestine rather than the reduction in the elimination or/and alteration in the distribution.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.38-47
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• 1989

A purely analytical model for HEMT's based on a two dimensional charge control simul-ation[4] is proposed. In this model proper treatment of diffusion effect of electron transport along a 2-DEG (two dimensional electron gas) channel is perfoemed. This diffusion effect is shown to effectively increase the bulk mibility and threshold voltage of the I-V curves compared to the existing models. The channel thickness and gate capacitance are expressed as functions of gate voltages covering subthreshold characteristics of HEMT's analytically. By introducing the finite channel opening and an effiective channel-length modulation, the solpe of the saturation region of the I-V curves ws modeled. The smooth transition of the I-V curves at linear-to-saturation regions of the I-V curves was possible using the continuous Troffimenkoff-type of field dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transition section forming between a GCA and a saturated section. This factor removes large discrepancies in the saturation region of the I-V curve predicted by existing l-dimensional models.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.47-51
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• 2015

To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the