• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.143-145
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• 2016

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.13-15
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• 2017

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.5-8
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• 2005

In this study, we prepared the ITO thin film for TOLED(Top-emitting OLED) or flexible display at room temperature using the FTS(Facing Targets Sputtering Apparatus). We observed characteristics of deposited thin films as a function of sputtering conditions. XRD patterns were independence trom oxygen gas flow and input current. But electrical and optical properties were strongly dependence. In the results, we could prepare good properties of ITO thin films resistivity of $4.27X10^{-4}[\Omega-cm]$, transmittance of over 80% at working gas pressure 1[mTorr], input current 0.6[A], oxygen gas ratio 0.3[sccm], at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.36-42
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• 2020

Silver nanowire (AgNW) random-meshes with high transmittance, low sheet resistance, and high oxidation stability and flexibility were fabricated using solution-based processes. The random-mesh structure was obtained by forming bubbles whose sizes and densities were controlled using a corona treatment of polyethylene terephthalate (PET) substrates. To reduce the sheet resistance of the fabricated AgNW electrode, a washing process using ethanol solution was performed. In addition, nickel (Ni) was coated on AgNW to improve resistance to oxidation. The effects of corona treatment and Ni-coating on the transmittance, sheet resistance, oxidation stability, and flexibility of the AgNW electrodes were investigated.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.293-294
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• 2008

Using bi-direction SOA based Extension system, FTTH can enhance PON system by increasing both the upstream and downstream link budget. This increased link budget can be used to extend the distance, increase the split ratio or both. The bi-direction SOA regenerates signals using all-optical amplification, and is therefore transparent to data rate or protocol. The bi-direction SOA supports legacy as well as future FTTx standards. This is based on SOA's proprietary technology platform for the manufacturing of advanced discrete photonics and photonic integrated circuits (PICs). Because the bi-direction SOA uses the same InP semiconductor technology used in virtually all telecom lasers, it is able to amplify signals at 1310 and 1490 nm, wavelengths not accessible with commercial fiber-amplifier (EDFA) technology. Due to the extremely fast response time of the InP semiconductor optical amplifiers inside, the SOA can accommodate both continuous (downstream) and bursty (upstream) traffic.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.65-69
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• 2007

A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as UV irradiation time, oxygen flow rate, and chamber pressure. The statistical significance of Ultra Violet (UV) treatment was confirmed using a paired-t test. The full factorial $2^3$ design was employed to determine significant main and interaction effects in UV irradiation process. The chamber pressure and the interaction between UV irradiation time and $O_2$ flow rate were found to be statistically significant at the significance level of 0.1. Furthermore, the optimized approach was proposed in achieving the improved conductivity after UV irradiation.