• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2014년도 추계 종합학술대회 논문집
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• pp.253-254
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• 2014

본 연구에서는 DC magnetron sputter 장비를 사용하여 투명 디스플레이 실현을 위한 상부전극용 박막을 제작하였고, 제작된 박막의 광학적 특성과 물리적 특성을 분석하였다. 소다라임 유리기판 인가된 전판 위에 증착한 ITO의 경우에는 박막의 증착률압에 따라 두께와 굴절률이 증가함을 보였으며, 증착된 박막의 광학적 투과도는 박막의 두께에 따라 접차 감소함을 확인 하였고, 반면 고전도 특성을 가진 알루미늄 박막은 증착된 박막의 두께가 두꺼울수록 전면의 반사도가 증가하여 투명전극으로 사용할 수 없었으나 스퍼터의 내부의 분위기압을 높이고 인가된 전압을 높고 단시간에 박막을 증착하였을 경우에 약 70%정도 현재 보다 향상된 투명전극으로의 광학적 투과도 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.56-56
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• 2018

Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• 융합정보논문지
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• 제7권5호
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• pp.53-58
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• 2017

석유 고갈의 시대에 저가이면서 반투명한 특징을 갖고 있는 염료감응형 태양전지(DSC)는 1991년 $Gr{\ddot{a}}tzel$의 연구결과 보고 이후 많은 주목을 받아왔다. 염료감응형 태양전지의 광전극의 빛 수확 성능을 증진시키고, 궁극적으로 광전변환효율을 향상시키기 위하여 다양한 구조를 갖는 산란층이 광전극 소재로 제안되었다. DSC 광전극의 산란층에서 산란의 중심으로는 지름이 250 - 300 nm 정도의 크기를 갖는 비교적 큰 이산화티탄 나노입자가 필요하다. 본 연구에서는 변형된 졸겔 공정을 이용하여 약 300 nm 크기의 이산화티탄 나노결정을 합성하였다. XRD와 TEM 분석결과에 의하면, 합성된 이산화티탄 나노입자는 아나타제 상의 단결정 특성을 나타내었다. 합성된 이산화티탄 나노입자를 이용하여 스핀 코팅 공정으로 제조된 이산화티탄 박막의 광학적 투과율은 550 nm 파장에서 약 50%로 측정되었다. 이처럼 적당한 투과율은 DSC 산란층의 산란 중심으로 사용하기에 적합하며, DSC의 광전변환효율 향상에 적절하게 기여할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• 전기화학회지
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• 제3권1호
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• pp.15-18
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• 2000

태양전지의 전극 기판으로 사용되는 전도성 투명 산화주석 박막의 제조 방법에 대하여 연구하였다. 졸겔법을 이용하여 산화 주석 박막을 제조하는 경우에 저가의 공정으로 대면적의 박막을 얻을 수 있는 장점이 있다. 본 연구에서는 공정 조건의 확립과 전구체의 설정에 중점을 두었다. 전구체 용액을 isopropyl 알코올에 tin isopropoxide를 용해한 용액을 사용하였으며 수화 반응을 억제하기 위하여 triethanolamine(TEA)을 첨가하였다. Corning유리 위에 spinning과 dipping방법을 이용하여 코팅을 하였으며 이후 열처리하여 최종 산화주석 박막을 제조하였다. 이렇게 제조된 박막은 가시광선 영역에서 $90\%$ 이상의 투과도를 보였으며 $0.01\Omega{\cdot}cm$ 이하의 비저항을 나타냈다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.