• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.87-91
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• 2019

As a highly conductive and transparent electrode, ITO/Ag/ITO multilayers are fabricated using an in-line sputtering method. Optimal thickness conditions have been investigated in terms of the optical transmittance and the electrical conductance. Considering the optical properties, in this study, the experimental characteristics are analyzed based on theoretical phenomena, and they are compared with the simulated results. The simulations are based on the finite-difference-time-domain (FDTD) method in solving linear Maxwell equations. Consequently, the results showed that ITO/Ag/ITO multilayer structures with respective thicknesses of 39.2 nm/10.7 nm/39.2 nm are most suitable with an average transmittance of about 87% calculated for wavelengths ranging from 400-800 nm and a sheet resistance of about $7.1{\Omega}/{\square}$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.550-551
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• 2022

In the present study, flexible display technology, which has attracted significant attention in recent years, is discussed. The technology has been widely applied to various devices, such as foldable smartphones and rollable TVs. Notably, different flexible display types from LCD to OLED and E-paper have been employed to implement such devices in practice. Among them, the OLED technology has thus far led the flexible display market. In the present study, the concept and current application fields of the technology are analyzed, and further its potential applications are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1229-1232
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• 2005

We report the method of preventing the grey color of Bi based glass frits caused by reduction of $Bi_2O_3$. To prevent reduction of $Bi_2O_3$, we controlled the melting temperature. Low melting temperature reduces the reduction of $Bi_2O_3$ and that makes clarity transparent glass cullets. After firing, glass frits that melted at lower temperature showed better transparency. To prevent the browning, we used some additives like CuO, $CeO_2$, CoO and $TiO_2$. The colors of glass cullets were varied according to additives. After firing, dielectric layer contained additives showed better transparency than the one without additives. In the point of reaction between dielectric layer and Ag electrode, CuO was the most effective additive in preventing the yellowing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.826-830
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• 2015

Transparent Ag nanowire conducting thin films with high surface hardness were fabricated by bar coating method. When coating speed was changed from 35 mm/sec to 50 mm/sec, the transmittance of coated glass increased from 65.3% to 80.8% in visible light range and the surface resistance was changed from $10.1{\Omega}/sq$ to $23.3{\Omega}/sq$. The surface hardness and adhesion of thin film were 5H and 5B.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.40-43
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• 2016

Transparent color coating films were fabricated on a glass substrate by using sol-gel hybrid binder and organic dye. Sol-gel hybrid binder coating film fabricated with PTMS of 0.03 mole showed a very high pencil hardness of 9 H. As the withdrawal speed increased from 1.0 mm/s to 5.0 mm/sec, The yellowness ($b^*$) of coating glass also gradually increased. The transmittance of yellow color coating glass was 82.6% and the haze of coating glass was 0.35%. Red and blue color coating glasses also showed the high transmittance of 62.4% and 80.6% respectively. The surface hardness of color coating films was 6 H.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.33-38
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• 2023

As the demand for large flexible displays such as tablet computers continues to rise, there is an increasing need for cost-efficient colorless and optically transparent polyimide film that can meet the desired performance, particularly optical transmittance. In this study, we investigated a detailed procedure for achieving optimal optical transmittance using two different combinations of monomers: 6FDA+BAPB and 6FDA+BPA+TFDB. We employed a design of experiment method to systematically synthesize polymers, allowing for the optimization of optical transmittance. In addition, we were able to achieve uniform thickness in the films by using a doctor blade. By comparing the price and optical transmittance of four different monomer combinations, we obtained fundamental data on the production of polyimide films that can be customized to meet the specific price and performance requirements of manufacturers. This approach enables users to select the most suitable polyimide film based on their desired price and performance parameters while achieving optimal optical transmittance.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1671-1672
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1105-1106
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• 2008

Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1019-1021
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• 2008

Multilayer transparent electrodes (MTE) based on an ultrathin metal layer assisted by additional dielectric or semiconducting layers are investigated as electrodes in OLEDs including an inverted geometry. A special attention is paid to their tuning capability in injection behavior and to their potential for ultra-flexible electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1466-1469
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• 2008

We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of $5.4\;cm^2/V.s$, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of $1.7{\times}10^9$. Although whole process temperature is below $150^{\circ}C$ to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.