• 대한소아치과학회지
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• 제51권3호
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• pp.220-228
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• 2024

In clinical pediatric dentistry, a base material with optical properties, including transparency, that can mask the color of the material used for root canal-filling is preferred. This study aimed to examine the optical properties of various base materials by thickness. The disk-shaped specimens were photopolymerized and fabricated using Ionosit (IN), TheraCal LC (TL), TheraCal PT (PT), and A2 shade of Filtek^TM Supreme Flowable Restorative (FZ), Fuji II LC (FL), and Ketac^TM Fil (KF) with 1 and 2 mm thickness. The color parameters of these specimens were measured using a spectrophotometer on a black and white background and were measured using the same method on a mold containing Vitapex^® and gutta-percha. The translucency parameter (TP) and color difference were calculated for each group. The Kruskal-Wallis and Bonferroni tests were used in the statistical analyses. The TP decreased when the thickness was 2 mm compared with 1 mm. The TP values of TL and PT were the lowest at all thicknesses. The TP values of 2 mm thickness in all molds filled with Vitapex^® and gutta-percha were the lowest for TL, PT, KF, and IN. In TL and PT, the color difference before and after the application of the canal-filling material was the smallest, regardless of material thickness. Within the limits of this in vitro study, TL, PT, KF, and IN demonstrated better masking of the color of canal-filling material.

• 한국환경농학회지
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• 제37권2호
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• pp.79-86
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• 2018

BACKGROUND: Chinese cabbage biosynthesizes various phytochemicals including carotenoids and glucosinolates. Environmental stress has a major effect on the growth and yields of vegetables, and can significantly affect nutritionally important phytochemicals. Phytochemicals of plants are influenced by light, temperature, carbon dioxide, and growing conditions. The aim of this study was to investigate the effect of various light sources on carotenoid and glucosinolate contents in Chinese cabbage. METHODS AND RESULTS: [Experiment I] Set the control (field control, FC) on the ground. Using acrylic sunlight, experiments were set up transparency box (field transparency, FT), red box (field red, FR) and blue box (field blue, FB). [Experiment II] Set the control (chamber control, CC) in the greenhouse. Using plant growth chamber with artificial light, experiments were set up LED red (chamber red, CR), LED blue (chamber blue, CB), LED mixed red+blue (chamber red+blue, CRB) and fluorescent (chamber fluorescent, CF). After plant growth, Chinese cabbage was harvested at 110 days after sowing (DAS). The status of plants growth (leaf length, width, fresh weight etc.) was immediately investigated. Carotenoid and GSL contents were analyzed by HPLC. [Experiment I] Results documented that the ranges of total carotenoid contents were 25.39 ~ 58.80 mg/kg dry wt for lutein, 0.84~ 4.22 mg/kg dry wt for zeaxanthin, and 3.85~18.71 mg/kg dry wt for ${\beta}$-carotene. Lutein was the highest for the content and the largest for the variation as well. [Experiment II] Results documented that the ranges of total carotenoid contents were 24.66~137.96 for lutein, 2.51~20.65 for zeaxanthin, and 8.40~49.80 mg/kg dry wt for ${\beta}$-carotene. The total carotenoid contents of CR (156.62) and CB (115.90) were 1.6~2.3 times larger than the other treatments, and ${\beta}$-carotene content was about twice as high as that of the other treatments on the CR (38.74 mg/kg dry wt.). [Experiment I] Total GSL content was the highest in FT (19.76) that was higher 1.7 times than the lowest treatment ($11.39{\mu}mol/g\;dry\;wt$.). [Experiment II] The total content of GSL was highest in CRB (4.19) and lowest in CF ($2.88{\mu}mol/g\;dry\;wt$.). In the CRB, total GSL contents ($4.19{\mu}mol/g\;dry\;wt$.) was the highest. CONCLUSION: Total and individual carotenoid and GSL contents in Chinese cabbage show significant differences under different light sources. Red and blue lights contribute to significant carotenoids expression and antioxidant activity for nutrition and health benefits. These results concluded that the introduction of varying lights affected the synthesis of important nutrient compounds in Chinese cabbage. It is predicted that the application of good light source enhances the accumulation of functional compounds.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.114-119
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• 2016

본 연구에서는 박테리아 셀룰로오스(BC)와 같은 천연고분자에 전도성 고분자 PEDOT:PEG와 graphene, 은나노와이어(AgNW)를 코팅하여 전도성을 부여하고자 하였다. 미리 PEDOT:PEG와 황산을 10~20%를 혼합하여 그 용액을 전자 스핀 코팅으로 BC 기판에 코팅하였다. 그 후, 전도성을 향상시키고자 graphene과 AgNW로 코팅하여 hall effect로 측정하였다. 그 결과, 대조군 PEDOT:PEG로 코팅한 BC 막의 전자농도($2.487{\times}10^{10}/cm^3$)에 비해 PEDOT:PEG에 황산을 10%로 혼합하여 코팅시킨 BC막($8.093{\times}10^{15}/cm^3$) 쪽이 $3.25{\times}10^5$배 높은 값을 나타내는 것으로 전도도가 대폭 향상되었음을 알 수 있었다. 또한, SEM분석으로 PEDOT:PEG가 황산처리에 의해 폴리머 형상으로 변화된 것을 확인 할 수 있었다. 분자구조의 변화를 FTIR분석결과 $1200cm^{-1}$ 파장의 S-O그룹이 황산처리 전에 비해 황산 혼합한 쪽에서 크게 상승된 것이 확인되었다. 이 방법을 이용하여 소량의 PEDOT:PEG사용으로 투명성을 확보할 수 있으며 미리 황산을 처리하는 것으로 제조공정을 단순하게 할 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 접착 및 계면
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• 제21권3호
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• pp.107-112
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• 2020

원자층 두께의 전이금속 칼코겐화합물(transition-metal dichalcogenide, TMD) 기반 반도체 소재는 그래핀과 비슷한 구조의 이차원구조를 지니는 소재로서 조절 가능한 밴드갭 뿐만 아니라 우수한 유연성, 투명성 등 다양한 장점으로 인해 다양한 미래사회의 전자소자에 활용될 수 있는 소재로서 각광받고 있다. 하지만 이러한 TMD 소재들은 수분과 산소에 매우 취약하다는 단점 때문에 대기안정성을 해결할 수 있는 다양한 시도가 이루어지고 있다. 본 연구에서는 핫픽업 전사기술을 이용하여 TMD 반도체 소재 중 하나인 WSe₂ 와 이차원 절연체 h-BN와의 수직 헤테로 구조를 제작하여 WSe₂의 대기 안정성을 향상시키기 위한 연구를 수행하였으며, h-BN/WSe₂ 구조를 활용하여 WSe₂ 기반 고성능 전계효과 트랜지스터 제작에 대한 연구를 수행하였다. 제작된 소자의 전기적 특성을 분석한 결과, h-BN에 의해 표면이 안정화된 WSe₂ 기반 소자는 대기안정성 뿐만 아니라 150 ㎠/Vs의 상온 정공 이동도, 3×10⁶의 온/오프 전류비, 192 mV/decade의 서브문턱스윙 등 우수한 전기적 특성을 갖는다는 것 또한 확인할 수 있었다.

• 공업화학
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• 제26권3호
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• pp.275-279
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• 2015

전도성 고분자인 poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS)는 우수한 전기 전도도와 광투과도, 유연성을 가지고 있기 때문에 유기태양전지와 유기발광소자의 투명전극으로서 많은 각광을 받고 있다. PEDOT : PSS의 전기 전도도는 솔벤트를 도핑함에 따라 큰 폭으로 증가한다는 사실은 잘 알려져 있다. 본 연구에서는 다양한 솔벤트의 도핑과 솔벤트 후처리 공정에 따른 PEDOT : PSS 박막의 전기 전도도와 구조적 특성 변화를 연구하였다. 솔벤트 도핑으로 PEDOT : PSS의 전도도는 884 S/cm까지 증가하였고, 후처리 공정을 통해서 1131 S/cm의 전도도 값을 얻을 수 있었다. 이러한 전도도의 증가는 PSS 물질이 빠져나가거나 구조적인 재배열에 따른 전도성 PEDOT 입자의 접촉 면적이 증가함에 따른 것으로 사료되고, 광학적인 방법으로 PSS의 추출을 관찰하였다. 솔벤트 후처리 공정은 PEDOT : PSS 박막의 전도도를 향상하는 매우 효과적인 방법으로 확인되었고, 저가형 플렉서블 유기전자소자의 투명전극으로써의 사용이 적합할 것으로 예상된다.

• 산업진흥연구
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• 제5권4호
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• pp.39-53
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• 2020

최근 사회혁신기업에 대한 경영공시나 자율경영공시 등 회계의 투명성을 기반으로 한 기업신뢰에 대한 요구가 증가함에 따라 사회혁신기업도 회계 및 세무업무에 대한 직무가 중요해지고 있는 상황에서, 본 연구는 그동안 연구되지 않은 NCS 회계·감사 및 세무분야 직무가 지속가능성에 미치는 영향에 대하여 살펴보았다. 특히 경영공시나 재무제표의 적정성 등에 대한 문제는 회계업무담당자가 얼마나 윤리적으로 업무처리를 수행하는가에 달려있다. 따라서 회계업무담당자의 회계윤리가 NCS 회계·감사 및 세무분야 직무가 지속가능성에 미치는 영향관계에서의 매개역할에 대하여 살펴보았다. 연구대상은 서울, 부산 등 특별시와 광역시에 설립된 사회적기업을 포함하여 사회적협동조합 등 사회혁신기업 50개 기업에서 회계업무를 담당자는 500명을 대상으로 설문을 조사하고, 이중 372개의 유효설문지를 가지고 경로분석을 실시하였다. 분석결과 NCS 회계·감사 및 세무분야 직무는 사회혁신기업의 지속가능성 요소인 경제적 가치와 사회적가치 및 환경적가치에 모두 유의한 영향을 미치고 있다. 또한 NCS 회계·감사 및 세무분야 직무는 회계윤리에도 유의한 영향을 미치며, 회계윤리는 경제적가치를 제외하고 사회적가치와 환경적가치에 유의한 영향을 미치는 것으로 나타났다. 또한, NCS 회계·감사 및 세무분야 직무와 사회혁신기업의 지속가능성 요소 사이에서 회계윤리는 매개효과가 있는 것으로 나타났다. 특히 NCS 회계·감사 및 세무분야 직무와 사회적가치의 관계에서는 완전매개효과 있는 것으로 나타났다.

• KSBB Journal
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• 제14권1호
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• pp.58-65
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• 1999

온도 및 pH에 동시에 민감한 하이드로젤 Poly(N-isopropy-lacrylamide-co-N,N'-dmerhylaminopropyl methacrylamide)을 합성하고, 그 팽윤 특성을 연구하였다. pH 민감성분인 N,N'-dmerhylaminopropyl methacrylamide (DMAPMAAn)의 물분율이 5%인 하이드로젤이 팽윤정도는 lower critucal solution temperature(LCST) 이상의 온도($37^{\circ}C$ 및 $40^{\circ}C$)에서 pH가 낮은 범위(pH 1-8)일 때 크게 증가하였다. 이는 온도민감성 하이드로젤이 같은 pH범위에서 전혀 팽윤이 일어나지 않는 것과 대조되었다. DMAPMAAm의 물분울이 20%인 경우에는 높은 pH(pH 12)에서도 젤이 상당히 팽창하였다. $40^{\circ}C$에서 pH가 12에서 2로 감소할 때 젤의 수분함량은 5mol%젤의 경우 38.8 wt%에서 84.7wt%로 증가하였고, 20mol%젤의 경우 60.6 wt%에서 90.8wt%로 증가하였다. 온도 및 pH에 동시에 민감한 하이드로젤의 부피 변화에 대해 이와 같이 pH는 온도 및 젤 조성의 영향을 받아 $37^{\circ}C$에서 pH 8보다 $40^\circC$에서 (pH 7) 더 낮아졌고, 5 mol%에서 (pH 7)보다 20 mol%일때 (pH 9) 증가하였다 LCST 이하의 온도 ($25^{\circ}C$)에서는 젤의 팽윤정도가 pH에 의해 크게 영향받지 않았다. 젤의 투명도와 LCST는 DMAPMAAm의 물분율에 따라 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.