• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.573-577
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• 1997

Surface phase transition is known to be observed at the system that there exists a strong attractive potential between particles adsorbed. This study presents a dependence of the surface phase transition on strong attractive force using a simple occupation statistical method. It was found that the system exhibits a phase transition from the vacuum phase into the population phase and the critical pressure also increases with the temperature. This fact indicates that these results explain well qualitatively the surface phase transition.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.139-156
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• 1996

The phase field model is becoming the model of choice for the theoretical study of the morphologies of crystals growth from the melt. This model provides an alternative approach to the solution of the classical (sharp interface) model of solidification by introducing a new variable, the phase field, Ø, to identify the phase. The variable Ø takes on constant values in the bulk phases and makes a continuous transition between these values over a thin transition layer that plays the role of the classically sharp interface. This results in Ø being governed by a new partial differential equation(in addition to the PDE's that govern the classical fields, such as temperature and composition) that guarantees (in the asymptotic limit of a suitably thin transition layer) that the appropriate boundary conditions at the crystal-melt interface are satisfied. Thus, one can proceed to solve coupled PDE's without the necessity of explicitly tracking the interface (free boundary) that would be necessary to solve the classical (sharp interface) model. Recent advances in supercomputing and algorithms now enable generation of interesting and valuable results that display most of the fundamental solidification phenomena and processes that are observed experimentally. These include morphological instability, solute trapping, cellular growth, dendritic growth (with anisotropic sidebranching, tip splitting, and coupling to periodic forcing), coarsening, recalescence, eutectic growth, faceting, and texture development. This talk will focus on the fundamental basis of the phase field model in terms of irreversible thermodynamics as well as it computational limitations and prognosis for future improvement. This work is supported by the National Science Foundation under grant DMR 9211276

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.362-370
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• 1996

Kalsilite (KAlSiO4) system undergoes a displacive phase transition from hexagonal phase with p63 space group to the phase with P63mc at 886$^{\circ}C$. The flux composition having kalsilite :K2O:B2O3=1:2:2 has enabled the growth of hexagonal kalsilite with the size of 0.5~1 mm at a slow cooling rate (0.3$^{\circ}C$/hr). On decreasing the cooling rate the size has increased and pyramidal (1011) faces are newly developed with the shape of (0001) and (1010) faces. Upon stirring (1011) faces are degraded. The space group of O1 and O2 are P21221 and C2221 respectively. Their orthorombic modification O1 and O2 are synthesized at relatively low and high temperature respectively.

• Fibers and Polymers
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• v.2 no.2
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• pp.98-107
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• 2001

The phase transition behavior isothermal micro-phase separation kinetics of polyester-based thermoplastic elastomer were studied using the synchrotron X-ray scattering(SAXS) method. The structural changes occurring during heating period were investigated by determining the changes of the one-dimensional correlation function, interfacial thickness and Porod constant. Based on the abrupt increases of the domain spacing and interfacial thickness, a major structural change occurring well below the melting transition temperature is suggested. Those changes are explained in terms of melting of the thermodynamically unstable hard domains or/and the interdiffusion of the hard and soft segments in the interfacial regions. SAXS profile changes during the micro-phase separation process were also clearly observed at various temperatures and the separation rate was found to be sensitively affected by the temperature. The peak position of maximum scattering intensity stayed constant during the entire course of the phase separation process. The scattering data during the isothermal phase separation process was interpreted with the Cahn-Hilliard diffusion equation. The experimental data obtained during the early stage of the phase separation seems to satisfy the Cahn-Hilliard spinodal mechanism. The transition temperature obtained from the extrapolation of the diffusion coefficient to zero value turned out to be about 147$\pm$$2^{\circ}$, which is close to the order-disorder transition temperature obtained from the Porod analysis. The transition temperature was also estimated from the inveriant growth rate. By extrapolating the inveriant growth rate to zero, a transition temperature of about 145$\pm$$\pm$$2^{\circ}$ was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.63-67
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• 2004

The layered structure of cobalt dodecanesulfate was synthesized. A phase transition takes place at various temperature ranges and results in a drastic change of the layer distance. A monolayer structure of cobalt dodecanesulfate at room temperature transformed to a bilayer structure as a dehydrated form at high temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.361-365
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• 2015

Vanadium dioxide ($VO_2$) of monoclinic phase exhibits Metal Insulator Phase Transition (MIPT) phenomenon involving a sharp change in electrical and optical properties at $68^{\circ}C$. Solution-based process is applied to form uniform $VO_2$ coating layer on ceramic tiles. This can selectively block the near-infrared light to possibly reduce the energy loss and prevent dew condensation caused by the temperature difference. Heat treatment conditions including temperature and dwell time were examined to obtain a monoclinic $VO_2$ single phase. Both rutile and monoclinic $VO_2$ phases were observed from in the tiles post-annealed below $700^{\circ}C$. Desired monoclinic $VO_2$ single phase was grown in the tiles heat treated at $750^{\circ}C$. Nano facets of irregular size were observed in the monoclinic $VO_2$ phase involving the phase-transition. Grain growth of monoclinic $VO_2$ phase was observed as a function of dwell time at $750^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.463-469
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• 1999

The potassium lithium niobate $K_3$$Li_2$$Nb_5$$O_{15}$ single crystals were growing in $K_x$$Li_{1-x}$$NbO_3$ (x = 0.4~0.6) chemical formular by the Czorchralski method. Crystal growth is studied in two orientations with growth along a-axis and c-axis. We have subjected this crystal to x-ray diffraction studies and found that they are single-crystalline and belong to tetragonal system with the lattice parameters a = b = 12.577 $\AA$ and c = 3.997$\AA$. The temperature dependence of dielectric constant was measured in the region of the phase transition. Curie temperature and diffuseness of phase transition are influenced by composition concentration. The composition and cation distribution of ferroelectric TB-type niobate crystals has a strong influence on the ferroelectric properties. Growth condition, optical transmittance, etching pattern and dielectric properties are presented and discussed.