• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.53-57
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• 2009

In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

• The Transactions of the Korea Information Processing Society
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• v.4 no.4
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• pp.895-907
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• 1997

The mining of assciation rules disovers the trndency of events ocuring simultaneously in large databases. Previous announced research on association rules deals with associations with associations with respect to the whole transaction. However, xome association rules could have very high confidence in a sub-range of the time domain, even though they do not have quite high confidence in the whole time domain. Such kind of association rules are ecpected to be very usdful in various decion making problems.In this paper, we define transient association rule, as an association with high cimfidence worthy of special attention in a partial time interval, and propose an dfficeint algorithm wich finds out the time intervals appropriate to transient association rules from large-databases.We propose the data-driven retrival method excluding unecessary interval search, and design an effective data structure manageable in main memory obtined by one scanning of database, which offers the necessary information to next retrieval phase. In addition, our simulation shows that the suggested algorithm has reliable performance at the time cost acceptable in application areas.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.285-291
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• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.1-12
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• 2003

In this study, a regime where independent treatment of SETs in transient simulations is valid has been identified quantitatively. It is found that as in the steady-state case, each SET can be treated independently even in the transient case when the interconnection capacitance is large enough. However, the value of the load capacitance $C_{L}$of the interconnections for the independent treatment of SETs is approximately 10 times larger than that of the steady state case. A compact SET transient model is developed for transient circuit simulation by SPICE. The developed model is based on a linearized equivalent circuit and the solution of master equation is done by the programming capabilities of the SmartSpice. Exact delineation of several simulation time scales and the physics-based compact model make it possible to accurately simulate hybrid circuits in the time scales down to several tens of pico seconds. The simulation time is also shown to depend on the complexity level of the transient model.l.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.326-329
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• 2000

In this paper, a complete methodology of incorporating the displacement current for the calculation of a single electron inverter characteristics has been devised. It has been implemented for the calculation of the low frequency noise spectrum in a single electron inverter in the framework of Monte-Carlo method. Our new methodology opens up a systematic way of analyzing transient behaviors of single electron circuits.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1145-1148
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• 1998

New capacitance modeling and transient analysis for multi-layer interconnects with shielding effect are presented. The upper layer capacitances with under-layer shielding lines are represented by introducing a filling factor η which can be defined as the ratio of upper-layer line length to the total under-layer line width. The upper-layer effective self capacitances considering two extreme cases which the underlayer metals are assumed as a ground or as a Vdd are modeled. The signal transient analysis with shielding effect model is performed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.66-71
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• 1998

Discretization method and numerical calculations of wigner function to introduce the influence of spatially varying effective mass as well as to reduce the error involved in the conventional discretization model are presented. Using this new discrete model, the transient responses of resonant-tunneling-diode are analyzed.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1992.11a
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• pp.32-36
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• 1992

This paper develops the dynamic equivalents program combined with graphic user interface(GUI), to solve the stability of large power system. The p개posed method is coherency-based dynamic equivalents for transient stability studies. The program also provides with pull-down menu and Hangout help information for users. The developed dynamic equivalents program is suitable for the transient stability studies of a large power system with lots of data. The dynamic equivalents demonstrated over the New England system with 39 buses and 10 generators.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.122-131
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• 1993

In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.90-91
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• 2009

We study of the variation on non-uniform plasma in different layer of the semiconductor. The transient response in different plasma layer has been evaluated theoretically. The reflection function of dielectric microstrip lines resulting from the presence of plasma are evaluated by the transmission line model. The diffusion length is small compared to the absorption depth. The variation of characteristic response in plasma layer with microwave pulses which has in localized has been evaluated.