• Journal of the Korean Geotechnical Society
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• v.16 no.3
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• pp.145-155
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• 2000

지반과 구조물을 일체화시키는데 사용하는 앵커는 앵커체와 지반의 마찰력에 의해서 구조물을 지지하는 역할을 하며 앵커의 하중과 변형의 관계를 규명하기 위해서는 앵커의 마찰력 분포의 변화(하중전이)가 중요한 요소가 된다. 하중 재하시 앵커체에 발생하는 하중전이 분포는 앵커의 인발 지지력과 밀접한 관계가 있고 정착장의길이, 지반 조건 등에 따라 분포 양상이 변하기 때문에 하중 정이를 이해하기 위해서는 강선과 그라우트의 하중분포 그리로 앵커 그라우트체와 지반과의 마착력 분포를 알아야 한다. 본 연구는 미국 Texax A&M University의 점성토지반에 계측기가 장착된 10개의 그라운드 앵커를 설치하여 인발시험을 수행하였다. 앵커의 자유장 강선에 작용하는 응력, 그라우트체에 작용하는 응력, 그리고 정착장 강선의 응력을 계측하여 강선과 그라우트의 정착응력 및 그라우트와 지반에서의 마찰력 분포를 구함으로써 강선-그라우트-지반의 복합적인 거동에 따른 각 하중 단계마다의 하중전이를 얻어냈다. 또한 현장시험 결과의 역해석을 통하여 강선과 그라우트 사이의 하중과 변위의 관계와 그라우트와 지반의 하중-변위 관계를 분석하여 그라운드 앵커의 인발 특성을 예측 할 수 있는 수치해석 기법을 모델링하여 제시하였다.

• Proceedings of the Korea Concrete Institute Conference
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• 2005.11a
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• pp.271-274
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• 2005

Existing strut-and-tie model cannot be applied to analysis of slender beams without shear reinforcement because shear transfer mechanism is not formed. In the present study, a new strut-and-tie model with rigid joint was developed. Basically, concrete strut is modeled as a frame element which can transfer shear force (or moment) as well as axial force. Employing Rankine failure criterion, failure strength due to shear-tension and shear-compression developed in compressive concrete strut was defined. For verification, various test specimens were analyzed and the results were compared with tests. The proposed strut-and-tie model predicted shear strength and failure displacement with reasonable precision, addressing the design parameters such as shear reinforcement, concrete compressive strength, and shear span ratio.

• Proceedings of the Korea Concrete Institute Conference
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• 2003.11a
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• pp.207-210
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• 2003

As reviewing of current trend on PC connection details, owing to effective stress transfer in the connection, it grow to increase that use of mechanical splices, reinforcements or welded splices, and prestressing. However such devices as reinforcement, mechanical splices entail not only more cost resulted from materials but also extra construction process so as to cause PC used method to lower competition against conventional method. Therefore more enhanced connection details which help working process simplified and construction cost reduced. In this research, as replace 9.3mm 7strand for reinforcement, it is attempt to devise connection detail which makes workability improve and confirm effective stress transfer in the region of connection. The experimental research is proceeded by partial tension test of specimen. The splice lengths of 7strand is decided to be variations. The flexural capability is verified to depend on spice length. An an appropriate splice length could be also determined as a precedent research on improving PC connection detail.

• Journal of the Korean Geotechnical Society
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• v.17 no.3
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• pp.59-68
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• 2001

풍화토 지반에 설치된 그라운드 앵커의 하중전이 현상을 규명하기 위하여 성균관대학교 지반시험장에서 인발시험을 수행하였다. 지반과 구조물을 일체화시키는데 사용하는 앵커는 앵커체와 지반의 마찰력에 의해서 구조물을 지지하는 역할을 하며 앵커의 하중과 변형의 관계를 규명하기 위해서는 앵커의 마찰력 분포의 변화(하중전이)가 중요한 요소가 된다. 하중 재하시 앵커체에 발생하는 하중전이 분포는 앵커의 인발 지지력과 밀접한 관계가 있고 앵커체의 종류(인장형 또는 압축형), 정착장의 길이, 지반 조건 등에 따라 분포 양상이 변하기 때문에 하중전이를 이해하기 위해서는 강선과 그라우트의 하중분포 그리고 앵커 그라우트체와 지반과의 마찰력 분포를 알아야 한다. 앵커의 자유장의 강선에 작용하는 응력, 그라우트체에 작용하는 응력, 그리고 정착장 강선의 응력을 계측하여 강선과 그라우트의 정착응력 및 그라우트와 지반에서의 마찰력 분포를 구함으로써 강선-그라우트-지반의 복합적인 거동에 따른 각 하중 단계마다의 하중전이 분포를 구하였다. 또한 현장시험 결과의 신뢰성 확보를 위하여 수치해석 모델링을 통하여 해석을 수행하여 비교하였다.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.132-136
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• 2005

It is widely accepted that the reading mechanism of Super-RENS(super-resolution near field structure) and Super-ROM(super-resolution read only memory) is closely related with non-linear temperature dependent material properties such as refractive indices, phase change. Furthermore, the dynamic change of the temperature distribution also an essential part of reading mechanism of Super-RENS/ROM. Therefore, the knowledge of the temperature distribution as a function a time is one of the important keys to reveal the physics of reading mechanism in Super-RENS/ROM. We calculated time-dependent temperature distribution in a 3-dimensional Super-ROM disk structure when moving laser beam is irradiated. With a help of commercial software FEMLAB which employed finite element method, we simulated the temperature distribution of ROM structure whose pit diameter is 120-nm with 50-nm depth. Energy absorption by moving laser irradiation, time variations of heat transfer processes, heat fluxes, heat transfer ratios, and temperature distributions of the complicate 3-dimensional ROM structure have been obtained.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.43-45
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted to heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated and heat transfer model was applied for obtaining the transient temperature profile. The transmission laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip.

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.1-7
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• 2002

Modem technology depends on the reliability of extremely high precision equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Therefore, this high technology equipments require very strict environmental vibration criteria because it is used as basic data for the design of building structure and structural dynamics of equipment. In this paper, the new approach is proposed to investigate the mismatch problem of time and frequency domain for vibration criteria of sensitive equipment. The proposed approach is based on a vibration measurement data and a relative transfer function which can be obtained by experiment or analysis.

• Journal of Welding and Joining
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• v.23 no.5
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• pp.55-60
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.

• Bulletin of the Korean Chemical Society
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• v.12 no.4
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• pp.387-392
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• 1991

We present a theoretical investigation of the inelastic atom-surface phonon scattering for a model He-Si(100) system by the classical trajectory-quantum forced oscillator(DECENT) method. Single and multi-phonon transition probabilities of normal modes are calculated for several initial beam orientations and several initial kinetic energies. In order to understand surface structure effects, the calculation has been done on both reconstructed and unreconstructed surfaces of the He/Si(100) system. The origin of mode specificity for energy transfer is discussed. The contribution of one, two, and multi-phonon events to the total energy transfer between 0 and 600 K is also given.