• Title/Summary/Keyword: top-contact

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Contact Damage and Fracture of Poreclain/Glass-Infiltrated Alumina Layer Structure for Dental Application (치아 응용을 위한 /유리침윤 알루미나 이중 층상구조의 접촉손상 및 파괴)

  • 정연길;여정구;최성설
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1257-1265
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    • 1998
  • Hertzian contact tests were used to investigate the evolution of fracturedamage in the coating layer as functions of contact load and coating thickness by studying crack patterns in porcelain on glass-infiltrated alumina bilayer system conceived to simulate the crown structure of a tooth. Cone cracks initiated at the coating top surface without delamination at interface and crack propagation to substrate. Preferentially the cracks made multi-cracks at the coating top surface rather than proceeding to interface. The cracks were highly stabilized with wide ranges between the loads to initiate first cracking and to cause final failure im-plying damage-tolerant capability. Finite element modelling was used to evaluate the stress distribution. Maximum tensile stress were responsible for the cracking at the coating layer and had a profound influence on the crack pattern and fracture damage in the layered structure materials.

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The receding contact problem of two elastic layers supported by two elastic quarter planes

  • Yaylaci, Murat;Birinci, Ahmet
    • Structural Engineering and Mechanics
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    • v.48 no.2
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    • pp.241-255
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    • 2013
  • The receding contact problem for two elastic layers whose elastic constants and heights are different supported by two elastic quarter planes is considered. The lower layer is supported by two elastic quarter planes and the upper elastic layer is subjected to symmetrical distributed load whose heights are 2a on its top surface. It is assumed that the contact between all surfaces is frictionless and the effect of gravity force is neglected. The problem is formulated and solved by using Theory of Elasticity and Integral Transform Technique. The problem is reduced to a system of singular integral equations in which contact pressures are the unknown functions by using integral transform technique and boundary conditions of the problem. Stresses and displacements are expressed depending on the contact pressures using Fourier and Mellin formula technique. The singular integral equation is solved numerically by using Gauss-Jacobi integration formulation. Numerical results are obtained for various dimensionless quantities for the contact pressures and the contact areas are presented in graphics and tables.

Organic Transistor Characteristics with Electrode Structures (전극 구조에 따른 유기 트랜지스터 특성)

  • Lee, Boong-Joo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.1
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    • pp.93-98
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    • 2013
  • In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the characteristics of organic transistor, we tested transistor's mobility and output values with organic transistor's electrode structures. As a results, the mobility of top contact was $8{\times}10^{-3}[cm^2V^{-1}s^{-1}]$, that of bottom contact was $2{\times}10^{-4}[cm^2V^{-1}s^{-1}]$. Also, off current of bottom contact was increased. Therefore, we recommend the top contact electrode structure of organic transistor.

Low velocity impact response and dynamic stresses of thick high order laminated composite truncated sandwich conical shell based on a new TDOF spring-mass-damper model considering structural damping

  • Azizi, A.;Khalili, S.M.R.;Fard, K. Malekzadeh
    • Steel and Composite Structures
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    • v.26 no.6
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    • pp.771-791
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    • 2018
  • This paper deals with the low velocity impact response and dynamic stresses of composite sandwich truncated conical shells (STCS) with compressible or incompressible core. Impacts are assumed to occur normally over the top face-sheet and the interaction between the impactor and the structure is simulated using a new equivalent three-degree-of-freedom (TDOF) spring-mass-damper (SMD) model. The displacement fields of core and face sheets are considered by higher order and first order shear deformation theory (FSDT), respectively. Considering continuity boundary conditions between the layers, the motion equations are derived based on Hamilton's principal incorporating the curvature, in-plane stress of the core and the structural damping effects based on Kelvin-Voigt model. In order to obtain the contact force, the displacement histories and the dynamic stresses, the differential quadrature method (DQM) is used. The effects of different parameters such as number of the layers of the face sheets, boundary conditions, semi vertex angle of the cone, impact velocity of impactor, trapezoidal shape and in-plane stresses of the core are examined on the low velocity impact response of STCS. Comparison of the present results with those reported by other researchers, confirms the accuracy of the present method. Numerical results show that increasing the impact velocity of the impactor yields to increases in the maximum contact force and deflection, while the contact duration is decreased. In addition, the normal stresses induced in top layer are higher than bottom layer since the top layer is subjected to impact load. Furthermore, with considering structural damping, the contact force and dynamic deflection decrees.

Case Study Top-Base Foundation Static Loading Test in Reclaimed Land (매립지반의 팽이말뚝 평판재하시험 사례 연구)

  • Shin, Eun-Chul;Kim, Sung-Hwan;Lee, Ae-Young
    • Proceedings of the Korean Geotechical Society Conference
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    • 2008.10a
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    • pp.721-728
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    • 2008
  • Top-Base Method is a stabilization method for light weight structures particularly in the soft ground. It is widely used for the increment of bearing capacity and the effect of restraining settlement when the bearing capacity of the ground is not enough. Top-shaped cone concrete foundations are installed in graveled laid over soft ground. The principle of the basic method is to maximize effect of dispersing the overburden pressure by increasing the contact area of the top-shaped cone. Therefore, the bearing capacity is increased and the settlement is decreased by the embedded resistance of pile part in the ground. In this paper, the plate bearing test was conducted to evaluate the feasibility of Top-Base foundation. Based on the test results, the coefficient of subgrade reaction, elastic modulus, and settlement of foundation on reclaimed land was derived.

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A Study on The Improvement of Profile Tilting or Bottom Distortion in HARC (높은 A/R의 콘택 산화막 에칭에서 바닥모양 변형 개선에 관한 연구)

  • Hwang, Won-Tae;Kim, Gli-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.389-395
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    • 2005
  • The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

Thermal characteristic of PRAM with top electrode (상부전극에 따른 상변화 메모리의 발열 특성)

  • Choi, Hong-Kyw;Jang, Nak-Won;Kim, Hong-Seung;Lee, Seong-Hwan;Mah, Suk-Bum
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.97-98
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    • 2007
  • In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

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Examination of analytical and finite element solutions regarding contact of a functionally graded layer

  • Yaylaci, Murat;Adiyaman, Gokhan;Oner, Erdal;Birinci, Ahmet
    • Structural Engineering and Mechanics
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    • v.76 no.3
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    • pp.325-336
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    • 2020
  • In this study, the continuous and discontinuous contact problems of functionally graded (FG) layer resting on a rigid foundation were considered. The top of the FG layer was loaded by a distributed load. It was assumed that the shear modulus and the density of the layer varied according to exponential functions along the depth whereas the the Poisson ratio remained constant. The problem first was solved analytically and the results were verified with the ones obtained from finite element (FE) solution. In analytical solution, the stress and displacement components for FG layer were obtained by the help of Fourier integral transform. Critical load expression and integral equation for continuous and discontinuous contact, respectively, using corresponding boundary conditions in each case. The finite element solution of the problem was carried out using ANSYS software program. In continuous contact case, initial separation distance and contact stresses along the contact surface between the FG layer and the rigid foundation were examined. Separation distances and contact stresses were obtained in case of discontinuous contact. The effect of material properties and loading were investigated using both analytical and FE solutions. It was shown that obtained results were compatible with each other.

COG(chip on glass) 구조에서 유리를 투과하는 레이저 조사 방식에 의한 area array type 패키지의 마운팅 공정

  • 이종현;김원용;이용호;김영석
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.07a
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    • pp.119-126
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    • 2001
  • Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion(i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

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Reset current of PRAM cell with top electrode contact size (상부전극 접촉면 크기에 따른 PRAM cell의 지우기 전류 특성)

  • Choi, Hong-Kyw;Jang, Nak-Won;Lee, Seong-Hwan;Yi, Dong-Young;Mah, Suk-Bum
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1272-1273
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    • 2008
  • PRAM(Phase change access memory) has desirable characteristics including high speed, low cost, low power, and simple process. PRAM is based on the reversible phase transition between resistive amorphous and conductive crystalline states of chalcogenide. However, PRAM needs high reset current for operation. PRAM have to reduce reset current for high density and competitiveness. Therefore, we have investigated the reset current of PRAM with top electrode contact hole size using 3-D finite element analysis tool in this paper.

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