• 대한치과보철학회지
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• 제39권1호
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• pp.84-95
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• 2001

Titanium is widely used in dentistry for its low density, high strength, fatigue resistance, corrosion resistance, and biocompatibility. But it has a tendency of surface damage under circumstance of friction and impact for its low hardness of the surface. Coating is one of methods fir increasing surface hardness. Its effect is to improve surface physical characteristics without change of titanium. Diamond-like carbon and titanium nitride are known for its high hardness of the surface. So that this study was aimed at the wear test and the cytotoxicity test of the commercially pure titanium and Ti-6Al-4V alloy which were deposited by diamond-like carbon film or titanium nitride film to acertain improvement of the surface hardness and the biocompatibility. A disk (25mm diameter, 2mm thickness) was made of commercially pure titanium and Ti-6Al-4V alloy and these substrates were deposited by diamond-like carbon film or titanium nitride film. Diamond-like carbon film was deposited by the method of radiofrequency plasma assisted chemical vapor deposition and titanium nitride film was deposited by the method of reactive arc ion plating. Then these substrates were tested about wear characteristics by the pin-on-disk type wear tester in which ruby ball was used as a wear causer under the load of 32N, The fracture cycles were measured by rotating the substrates until their films were fractured. The wear volume was measured after 150 cycles and 3,000 cycles using surface profiler. The cytotoxicity test was peformed by the method of the MTT assay. The results were as follows : 1. In the results of the wear volume test, commercially pure titanium and titanium alloy which were coated by diamond-like carbon film or titanium nitride aim had higher resistance against wear than the substrates which were not coated by any films (P<0.05). 2. In the results of the fracture cycle test and the wear volume test, diamond-like carbon film had higher resistance against wear than titanium nitride film (P<0.05). 3. In both coatings of diamond-like carbon aim and titanium nitride film, Ti-6Al-4V alloy had higher resistance against wear than commercially pure titanium (P<0.05) 4. In the results of the cytotoxicity test, diamond-like carbon film and titanium nitride film had little cytotoxicity as like commercially pure titanium or Ti-6Al-4V alloy (P>0.05).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• 한국진공학회지
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• 제14권3호
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• pp.165-170
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• 2005

의료용 임플랜트의 혈액적합성 개선을 위하여 박막코팅에 대한 관심이 증대하고 있다. 특히 diamond-like carbon(DLC)과 titanium nitride(TiN) 박막은 우수한 화학, 물리적 성질은 물론 생체적합 특성까지 갖추고 있다. 따라서 이들 박막의 혈액 적합성과 물리적 특성과의 관개를 연구하기 위하여 박막표면의 모폴로지 및 젖음성과 fibrinogen흡착 특성을 비교 분석하였다. 혈액응고 원인이 되는 fibrinogen의 흡착량은 DLC보다 TiN의 경우가 적어, 보다 우수한 특성을 보였으며, 이것은 TiN박막 표면의 높은 친수성으로 인한 것으로 판단된다. 박막표면의 fibrinogen 흡착을 줄이기 위해 플라즈마 처리 및 노(爐) 열처리를 각각 수행하였다. 산소 플라즈마 및 열처리를 하였을 경우 DLC 박막은 큰 효과가 없는 반면 TiN 박막의 경우 fibrinogen 흡착량이 크게 줄어 보다 개선된 결과를 보였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.36-36
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• 1995

• Bulletin of the Korean Chemical Society
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• 제27권2호
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• pp.219-223
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• 2006

The thermal decomposition of tetrakis(ethylmethylamido) titanium (TEMAT) has been investigated in Ar and $H_2$ gas atmospheres at gas temperatures of 100-400 ${^{\circ}C}$ by using Fourier Transform infrared spectroscopy (FTIR) as a fundamental study for the chemical vapor deposition (CVD) of titanium nitride (TiN) thin film. The activation energy for the decomposition of TEMAT was estimated to be 10.92 kcal/mol and the reaction order was determined to be the first order. The decomposition behavior of TEMAT was affected by ambient gases. TEMAT was decomposed into the intermediate forms of imine (C=N) compounds in Ar and $H_2$ atmosphere, but additional nitrile (RC$\equiv$N) compound was observed only in $H_2$ atmosphere. The decomposition rate of TEMAT under $H_2$ atmosphere was slower than that in Ar atmosphere, which resulted in the extension of the regime of the surface reaction control in the CVD TiN process.

• 한국표면공학회지
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• 제25권6호
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• pp.299-308
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• 1992

Titanium nitride(TiN) has been synthesized by nitrogen ion irradiation onto the Ti thin film deposited on STD11 and SKH9 tool materials. The effect of irradiation flux and substrate temperature on the formation behavior and mechanical properaties of TiN were investigated through X-ray diffraction analysis, hardness and pin-on-disc wear testings. Nitrogen ion irradiation onto arc evaporated Ti thin film produced TiN of < 200> orientation at elevated temperature and thereby enhancing surface microhardness by 50% at maximum. Wear resistance was also improved by nitrogen irradiation at most process conditions. The enhancement of wear resistance appeared to be more effective for the nitrogen irradiated conditions at room temperature than at elevated temperature.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• 한국세라믹학회지
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• 제34권5호
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• 한국진공학회지
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• 제6권S1호
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• pp.133-136
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• 1997

In this paper multi-arc plasma plating film equipment Bulat-6 and its technical characteristics were analyzed in detail. This machine is the first of its kind in China. Influential factors and reducing methods on microdroplets of titanium were investigated. By method of electromagnetic field control and ion beam enhanced deposition excellent titanium nitride film could be obtained. Bicrohardness and adhesion were 250Mpa and 6.5Kg respectively.

• 한국결정성장학회지
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• 제6권3호
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• pp.318-326
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• 1996

본 연구는 초고집적회로의 금속 배선으로써 보다 유용할 것으로 기대되는 구리박막의 화학적인 증착기술에 관한 것으로 precursor 물질로는 (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper)로 명명된 금속 유기 물질을 사용하였다. 실험시스템의 초기 압력은 $10^{-6}$ Torr를 유지하고, 시스템의 챔버압력과 기판온도가 조정 가능하도록 설계, 제작되었다. 공정 조건에 따른 구리 박막 결정의 성장속도, Grain size, 전기적 성질을 측정하였다. 구리 박막을 증착하기 전에 W(tungsten) 또는 TiN(titanium nitride)이 증착되어 있는 실리콘 웨이퍼를 사용하였다. 본 연구에서는 $250^{\circ}C$이하의 상대적으로 낮은 실리콘 웨이퍼 온도에서의 실험이 가능하였으며 헬륨을 carrier gas로 사용하였는데 연구 결과 구리 박막 증착율이 $220^{\circ}C$에서 최대 $1,800\;{\AA}/분$으로 증가한 반면 표면 거칠기는 $200\;{\AA}$를 갖는 다결정 구리 박막을 관찰하게 되었다. 기판 온도가 $250^{\circ}C$이하일 때의 W(또는 TiN)과 $SiO_{2}$ 기판사이에서 구리 증착 선택성이 관찰되었으며, 최적의 기판 증착 온도는 약 $180^{\circ}C$와 반응용기 압력 0.8 Torr로 나타났다.