• Title/Summary/Keyword: titanium nitride film

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A STUDY ON THE RESISTANCE OF WEAR AND CYTOTOXICITY OF THE TITANIUM SURFACE AFTER FILM DEPOSITIONS (박막증착시 티타늄 표면의 마손저항도와 세포독성에 관한 연구)

  • Kim Hyung-Woo;Kim Chang-Whe;Kim Yung-Soo
    • The Journal of Korean Academy of Prosthodontics
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    • v.39 no.1
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    • pp.84-95
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    • 2001
  • Titanium is widely used in dentistry for its low density, high strength, fatigue resistance, corrosion resistance, and biocompatibility. But it has a tendency of surface damage under circumstance of friction and impact for its low hardness of the surface. Coating is one of methods fir increasing surface hardness. Its effect is to improve surface physical characteristics without change of titanium. Diamond-like carbon and titanium nitride are known for its high hardness of the surface. So that this study was aimed at the wear test and the cytotoxicity test of the commercially pure titanium and Ti-6Al-4V alloy which were deposited by diamond-like carbon film or titanium nitride film to acertain improvement of the surface hardness and the biocompatibility. A disk (25mm diameter, 2mm thickness) was made of commercially pure titanium and Ti-6Al-4V alloy and these substrates were deposited by diamond-like carbon film or titanium nitride film. Diamond-like carbon film was deposited by the method of radiofrequency plasma assisted chemical vapor deposition and titanium nitride film was deposited by the method of reactive arc ion plating. Then these substrates were tested about wear characteristics by the pin-on-disk type wear tester in which ruby ball was used as a wear causer under the load of 32N, The fracture cycles were measured by rotating the substrates until their films were fractured. The wear volume was measured after 150 cycles and 3,000 cycles using surface profiler. The cytotoxicity test was peformed by the method of the MTT assay. The results were as follows : 1. In the results of the wear volume test, commercially pure titanium and titanium alloy which were coated by diamond-like carbon film or titanium nitride aim had higher resistance against wear than the substrates which were not coated by any films (P<0.05). 2. In the results of the fracture cycle test and the wear volume test, diamond-like carbon film had higher resistance against wear than titanium nitride film (P<0.05). 3. In both coatings of diamond-like carbon aim and titanium nitride film, Ti-6Al-4V alloy had higher resistance against wear than commercially pure titanium (P<0.05) 4. In the results of the cytotoxicity test, diamond-like carbon film and titanium nitride film had little cytotoxicity as like commercially pure titanium or Ti-6Al-4V alloy (P>0.05).

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Titanium nitride thin films for applications in thin film resistors

  • Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.283-283
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    • 2007
  • Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

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Study on blood compatibility of diamond-like carbon and titanium nitride films (Diamond-like carbon 및 titanium nitride 박막의 혈액적합성 연구)

  • Yun Ju-Young;Bae Jin-Woo;Park Ki-Dong;Goo Hyun-Chul;Park Hyung-Dal;Chung Kwang-Wha
    • Journal of the Korean Vacuum Society
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    • v.14 no.3
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    • pp.165-170
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    • 2005
  • There is an increasing interest in developing novel coating to improve the blood compatibility of medical implants. Diamond-like carbon(DLC) and titanium nitride(TiN) films have been proposed as potential biomedical coatings due to their chemical k physical properties and moderate biocompatibility. To study the correlation between blood compatibility and physical properties of the films, the fibrinogen adsorption on the surface as well as morphology & wettability were investigated. The quantity of fibrinogen adsorption are Tower for TiN than DLC, which correlates with a higher hydrophilicity of TiN film. To reduce the quantity of fibrinogen adsorption on the film, plasma treatment and furnace annealing were performed, respectively. With the use of oxygen plasma and furnace annealing, the amount of fibrinogen adsorption on TiN film was remarkably reduced, while there was no decrease of the quantity with DLC.

Thermal Decomposition of Tetrakis(ethylmethylamido) Titanium for Chemical Vapor Deposition of Titanium Nitride

  • Kim, Seong-Jae;Kim, Bo-Hye;Woo, Hee-Gweon;Kim, Su-Kyung;Kim, Do-Heyoung
    • Bulletin of the Korean Chemical Society
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    • v.27 no.2
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    • pp.219-223
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    • 2006
  • The thermal decomposition of tetrakis(ethylmethylamido) titanium (TEMAT) has been investigated in Ar and $H_2$ gas atmospheres at gas temperatures of 100-400 ${^{\circ}C}$ by using Fourier Transform infrared spectroscopy (FTIR) as a fundamental study for the chemical vapor deposition (CVD) of titanium nitride (TiN) thin film. The activation energy for the decomposition of TEMAT was estimated to be 10.92 kcal/mol and the reaction order was determined to be the first order. The decomposition behavior of TEMAT was affected by ambient gases. TEMAT was decomposed into the intermediate forms of imine (C=N) compounds in Ar and $H_2$ atmosphere, but additional nitrile (RC$\equiv$N) compound was observed only in $H_2$ atmosphere. The decomposition rate of TEMAT under $H_2$ atmosphere was slower than that in Ar atmosphere, which resulted in the extension of the regime of the surface reaction control in the CVD TiN process.

The Study for Titanium Nitride Synthesis and its mechanical properties by Nitrogen Ion Irradiation (산소이온 면사에 의한 티타늄질화물 합성 및 기계적 특성에 관한 연구)

  • 강태만;박윤우;한전건
    • Journal of the Korean institute of surface engineering
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    • v.25 no.6
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    • pp.299-308
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    • 1992
  • Titanium nitride(TiN) has been synthesized by nitrogen ion irradiation onto the Ti thin film deposited on STD11 and SKH9 tool materials. The effect of irradiation flux and substrate temperature on the formation behavior and mechanical properaties of TiN were investigated through X-ray diffraction analysis, hardness and pin-on-disc wear testings. Nitrogen ion irradiation onto arc evaporated Ti thin film produced TiN of < 200> orientation at elevated temperature and thereby enhancing surface microhardness by 50% at maximum. Wear resistance was also improved by nitrogen irradiation at most process conditions. The enhancement of wear resistance appeared to be more effective for the nitrogen irradiated conditions at room temperature than at elevated temperature.

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Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

  • Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.3
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    • pp.106-109
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    • 2011
  • We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

Study on the Oxidation Resistance of Ti-Al-N Coating Layer (Ti-Al-N코팅층의 내산화 특성에 관한 연구)

  • 김충완;김광호
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.512-518
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    • 1997
  • The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

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INVESTIGATION OF MULTI-ARC PLASMA PLATING FILM EQUIPMENT BULAT-6 AND ITS TECHNICAL CHARACTERISTICS

  • Wen Xueya;Ma Te2ngcai;Hu Shejun
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.133-136
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    • 1997
  • In this paper multi-arc plasma plating film equipment Bulat-6 and its technical characteristics were analyzed in detail. This machine is the first of its kind in China. Influential factors and reducing methods on microdroplets of titanium were investigated. By method of electromagnetic field control and ion beam enhanced deposition excellent titanium nitride film could be obtained. Bicrohardness and adhesion were 250Mpa and 6.5Kg respectively.

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A study on copper thin film growth by chemical vapor deposition onto silicon substrates (실리콘 기판 위에 화학적 방법으로 증착된 구리 박막의 특성 연구)

  • 조남인;박동일;김창교;김용석
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.318-326
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    • 1996
  • This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

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