• 한국재료학회지
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• 제32권12호
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• pp.545-552
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• 2022

Tin-antimony sulfide nanocomposites were prepared via hydrothermal synthesis and a N₂ reduction process for use as a negative electrode in a sodium ion battery. The electrochemical energy storage performance of the battery was analyzed according to the tin-antimony composition. The optimized sulfides exhibited superior charge/discharge capacity (770 mAh g^-1 at a current density of 100 mA g^-1) and stable lifespan characteristics (71.2 % after 200 cycles at a current density of 500 mA g^-1). It exhibited a reversible characteristic, continuously participating in the charge-discharge process. The improved electrochemical energy storage performance and cycle stability was attributed to the small particle size, by controlling the composition of the tin-antimony sulfide. By optimizing the tin-antimony ratio during the synthesis process, it did not deviate from the solubility limit. Graphene oxide also acts to suppress volume expansion during reversible electrochemical reaction. Based on these results, tin-antimony sulfide is considered a promising anode material for a sodium ion battery used as a medium-to-large energy storage source.

• 전기화학회지
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• 제18권1호
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• pp.31-37
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• 2015

삼성분 칼코게나이드 화합물인 황화 주석 저마늄 ($Sn_xGe_{1-x}S$) 합금 나노입자를 메틸 주석 $(Sn(CH_3)_4$, tetramethyl tin, TMT) 메틸 저마늄 $(Ge(CH_3)_4$, tetramethyl germanium, TMG), 황화수소 ($H_2S$, hydrogen sulfide) 혼합 가스의 레이저 광분해 반응법으로 합성할 수 있으며, 이때 반응기 안의 가스 혼합비율에 따라 나노입자의 주석과 저마늄의 조성비를 조절할 수 있었다. 조성비를 가변시킨 나노입자는 모두 결정성을 갖게 만들 수 있었으며, 리튬 이온 전지의 음극소재로서 우수한 특성을 보여주었다. 조성비에 따라 특성을 조사결과, 황화저마늄은 70 사이클 후 최대 1200 mAh/g의 가장 높은 방전용량을 갖는 것과, 주석 성분 함량이 클수록 높은 충방전률에서 용량 유지가 더 잘 됨을 확인하였다. 이와 같은 우수한 효율의 황화물 합금 나노입자의 새로운 대량 합성법은 고성능 에너지 변환 소재 실용화에 기여할 것으로 예상된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.305.2-305.2
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• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• 대한핵의학회지
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• 제24권1호
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• pp.133-137
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• 1990

The general use of a number of $^{99m}Tc-labelled$ compounds makes the need for good routine quality control procedures, especially the labelling efficiency measurements. The purpose of these study were to measure the labelling efficiency of $^{99m}Tc-labelled$ MDP, DTPA, Tin colloid, and Antimony sulfide colloid using miniaturized paper and instant thin layer chromatography. The chromatographic systems include whatman 3 MM paper and acetone, Gelman ITLC-SG and 0.9% sodium chloride. The chromatographic strips are miniaturized $(1\times10\;cm)$, marked and numbered. Labelling efficiencies of $^{99m}Tc-labelled$ DTPA and Tin colloid were above 98.0%. $^{99m}Tc-labelled$ Antimony sulfide colloid was 90.0%. And labelling efficiency of $^{99m}Tc-labelled$ MDP was 89.0% Coefficient variance of $^{99m}Tc-labelled$ MDP, DTPA, Tin colloid, and Antimony sulfide colloid were 5.14%, 2.06%, 1.82% and 4.90%, respectively. We found that this miniaturized chromatographic quality control was simple and reliable.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.276.2-276.2
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• 2016

Dye-sensitized solar cells (DSCs) are promising candidates for light-to-energy conversion devices due to their low-cost, easy fabrication and relative high conversion efficiency. An important component of DSCs is counter electrode (CE) collect electrons from external circuit and reduct I3- to I-. The conventional CEs are thermally decomposed Pt on fluorine-doped tin oxide (FTO) glass substrates, which have shown excellent performance and stability. However, Pt is not suitable in terms of cost effect. In this report, we demonstrated that nickel sulfide thin films by atomic layer deposition (ALD)-using Nickel(1-dimethylamino-2-methyl-2-butanolate)2 and hydrogen sulfide at low temperatures of $90-200^{\circ}C$-could be good CEs in DSCs. Notably, ALD allows the thin films to grow with good reproducibility, precise thickness control and excellent conformality at the angstrom or monolayer level. The nickel sulfide films were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, hall measurements and cyclic voltammetry. The ALD grown nickel sulfide thin films showed high catalytic activity for the reduction of I3- to I- in DSC. The DSCs with the ALD-grown nickel sulfide thin films as CEs showed the solar cell efficiency of 7.12% which is comparable to that of the DSC with conventional Pt coated counter electrode (7.63%).

• 전기화학회지
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• 제14권4호
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• pp.225-230
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• 2011

Copper indium gallium selenide (CIGS) 기반 박막 태양전지는 저렴한 제작 단가 및 다른 박막 태양전지에 비해 높은 효율을 보여 실리콘 기반 태양전지의 차세대 태양전지로 각광을 받고 있다. 구성 요소 중 buffer 층은 window 층과 absorber 층 사이의 높은 밴드 갭(band gap)을 해소 해주는 역할을 한다. 기존의 cadmium sulfide(CdS)의 인체 유해성 때문에 이를 대신할 indium sulfide(In2S3)를 이용한 buffer 층의 연구가 활발히 진행되고 있다. 본 연구에서는 전기화학적인 방법을 통해 값싸고 간편하게 indium sulfide buffer 층을 전극 표면에 합성하는 연구를 진행하였다. Indium-Tin-Oxide(ITO) 전극표면을 sodium thiosulfate 및 indium sulfate의 혼합물 용액에 담그고 환원 전위를 인가하여 indium sulfide를 합성하였다. 크기가 다른 두 전압을 교대로 인가하여 확산 한계(diffusion limit)를 최소화 함으로써 표면에 균일한 조성을 가지는 buffer 층을 합성해 낼 수 있었다. 또한 합성 중 온도의 조절을 통해 buffer 층의 밴드 갭을 최적화 할 수 있었다. 이렇게 전기화학적으로 합성된 buffer 층은 X-선 광전자 분광법과 회절법의 분석을 통해 ${\beta}$-indium sulfide 결정구조를 가짐을 확인 하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.185-186
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• 2009

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.98.2-98.2
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• 2012

Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.156.1-156.1
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• 2016

Nickel sulfide (NiS) is one of the most promising candidates as an electrode material for supercapacitors due to its good capacitive properties, high electrical conductivity and low cost. In addition to the development of the new electrode materials, nanostructuring the electrode surface is one of the main issues in enhancing the capacitive performance of the supercapacitors because the increased surface area can improve the charge transfer and energy storage processes occurring at the electrode surface. However, most nanofabrication techniques require complicated and delicate nanoprocesses, and hence are not suitable for practical use. In this work, we developed a simple method to fabricate nanostructured NiS electrodes by depositing NiS onto $TiO_2$ nanoparticles. First, $TiO_2$ nanoparticles were spin-coated on a fluorine-doped tin oxide (FTO) substrate, and then NiS layers were deposited onto the $TiO_2$ nanoparticles by consecutive dip-coatings in the solutions containing nickel and sulfur precursors. This nanostructured NiS electrode showed significantly improved capacitive properties compared to the electrode of NiS films deposited without $TiO_2$ nanoparticles. The asymmetric full-cell supercapacitor with this nanostructured NiS electrode and activated carbon electrode was also fabricated and investigated.