• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• 한국초전도ㆍ저온공학회논문지
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• 제8권3호
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• pp.5-8
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• 2006

The effect of annealing time in Metal Organic Deposition(MOD) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pres sure of 700, 500, 300, 100, and 1 Torr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the an nealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to in crease the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over $1MA/cm^2$ using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced.

• 한국식품저장유통학회지
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• 제19권2호
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• pp.216-222
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• 2012

옥수수 전분의 인산화 가교반응에 의한 RS4 제조 시 최적 annealing 조건을 검토하였다. 전분유에 NaOH를 0.9%, 1.2%, 1.5%/st.ds의 농도가 되게 첨가하고 복합인산염(STMP/STPP 혼합)을 이용하여 인산화 가교반응 할 경우 NaOH 농도가 높을수록 반응 초기에 RS 함량이 빠르게 증가되었으나 NaOH 농도에 상관없이 반응 12시간 후에는 비슷한 RS 함량을 나타내었다. 전분유의 Annealing 처리는 인산화 가교반응 전에 실시하였다. 전분유를 pH 2-10, 온도 $40-60^{\circ}C$, 0-14시간으로 처리한 후 인산화 가교반응을 하였다. Annealing 처리시 pH가 낮을수록 RS 함량이 높아지는 결과를 보였으며 pH 2에서 annealing 온도 $50^{\circ}C$, 2시간 annealing에서 최고의 RS 함량을 나타내었다. 따라서 최적 인산화 가교반응 조건은 먼저 pH 2.0, $50^{\circ}C$에서 2시간 annealing 처리를 한 후 황산나트륨 농도 10%/st.ds, NaOH 농도 1.2%/st.ds 조건에서 12시간 인산화 가교반응을 행하는 것으로 생각된다. RS 함량은 인산염 투입량이 증가함에 따라 직선적으로 증가하였다. 본 연구결과에 의한 최적조건을 활용하여 복합인산염 10%/st.ds의 농도로 RS4를 제조한 결과 RS 함량은 72.3% 였으며 인의 함량은 0.36%/st.ds로 한국 식품첨가물 공전에 적합하여 식품용 소재로 활용이 가능할 것으로 사료된다.

• 동력기계공학회지
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• 제19권1호
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• pp.70-75
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• 2015

The influence of reversed austenite on the damping capacity in austenitic stainless steel with two phase of martensite and reversed austenite was investigated. The two phases of deformation induced martensite and reversed austenite was obtained by an reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for various time after 70% cold rolling. With an increase of the reverse annealing treatment temperature and time, volume fraction of reversed austenite was rapidly increased. With an increase of volume fraction of reveresd austenite, damping capacity was rapidly increased. At same volume of reveresd austenite, damping capacity of reversed austenite obtained by reverse annealing treatment at $700^{\circ}C$ for various time was higher then reveresd austenite obtained by reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for 10min. Thus, the damping capacity was affected greatly by reversed austenite obtained by annealing treatment at $700^{\circ}C$ for various time.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.103-107
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• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1999년도 춘계학술대회논문집
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• pp.112-115
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• 1999

The effect of intermediate annealing on the texture evolution in I.f steel was investigated by using X-ray texture measurement. After The sample was cold rolled to 80% reduction intermediate annealing was introduced to preform ${\gamma}$-fiber orientation grains in deformed matrix. The annealing time was varied between 30 and 3600 sec, These samples were cold rolled to 90% reduction and full annealed. By intermediate annealing final full annealed samples had very homogeneous ${\gamma}$-fiber orientation resulting in good deep drawability.

• 소성∙가공
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• 제13권5호
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• 한국인터넷방송통신학회논문지
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• 제8권6호
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• pp.105-110
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• 2008

질소 분위기 하에서 GaN 에피층의 고온 급속 열처리 효과를 조사하였다. 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 급속 열처리에 따른 효과는 x선 회절을 통하여 연구하였다. 열처리 시간이 증가할수록 Bragg 피크는 각도가 큰 쪽으로 이동하였다. 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였다가 다시 증가하였다. 시료는 적절한 조건 하에서 급속 열처리 후 구조적인 특성의 개선이 관측되었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다.