• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.8
• /
• pp.609-615
• /
• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.456-459
• /
• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.4
• /
• pp.228-233
• /
• 2009

In order to predict the temperature distribution of stainless steel strip in Bright Annealing (BA) furnace, we performed the analysis of heat transfer and fluid flow using STAR-CCM+. The analysis model included unsteady fluid flow, heat transfer with radiation and moving grid. Two kinds of radiative properties, emissivity and reflectivity, were applied to the stainless steel strip, one is constant and the other is variable with time. As we call, the BA furnaces of stainless steel strip have two different types, muffle and no-muffle. The using of muffle type has been faced with some problems such as rising in material price and shortening of life cycle, etc. So the development of no-muffle type BA furnace is very important in order to save energy cost, lower environmental load and increase the productivity. The designed (or expected) temperature of stainless steel strip coming out of BA furnace was about $1065^{\circ}C$ while the environment temperature maintains around $1100^{\circ}C$. The result of our calculation was very close (or similar) to design temperature, and the application of radiative properties variable with time produced more accurate result than applying constant ones.

• Macromolecular Research
• /
• v.17 no.3
• /
• pp.181-186
• /
• 2009

We fabricated ordered micro/nano patterns induced by controlled dewetting on the topographically patterned PS/P4VP bilayer thin film. The method is based on utilizing microimprinting lithography to induce a topographically heterogeneous bilayer film that allows the controlled dewetting upon subsequent thermal annealing. The dewetting that was initiated strictly at the boundary of the thicker and thinner regions was guided by the presence of the topographic structure. The dewetting front velocity of the microdomains in the confined regions was linearly proportional to the measurement time, which enabled us to control the size of the dewet domain with annealing time. In particular, the submicron sized dot arrays between lines were generated with ease when the dewetting was confined into geometry with a few microns in size. The kinetically driven, non-lithographical pattern structures accompanied the pattern reduction to 400%. The pattern arrays on a transparent glass substrate were especially useful for non-circular microlens arrays where the focal length of the lens was easily tunable by controlling the thermal annealing.

• Journal of the Korean Society for Heat Treatment
• /
• v.36 no.4
• /
• pp.230-236
• /
• 2023

The current study deals with the effect of cooling rate and temperature for annealing on medium-carbon Cr-Mo alloy steel, especially for cold heading quality wire rod, to derive the optimum micro-structures for plastic deformation. This is to optimize the spheroidization heat treatment conditions for softening the material. Heat treatment was performed under seven different conditions at a temperature between A_c1 and A_c3, mostly within 720℃ to 760℃, and the main variables at this time were temperature, retention time and cooling rate. Microstructure and phase changes were observed for each test condition, and it was confirmed that they were greatly affected by the cooling rate. It was also confirmed that the cooling rate was changed in the range of 0.1℃/min to 5℃/min and affected by phase deformation and spheroidization fraction. The larger the spheroidization fraction, the lower the hardness, which is associated with the increasing connection of ferrite phases.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.1
• /
• pp.88-91
• /
• 2024

The europium doped yttrium oxide (Y₂O₃:Eu³⁺) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y₂O₃:Eu³⁺ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y₂O₃:Eu³⁺ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

• Korean Journal of Materials Research
• /
• v.14 no.3
• /
• pp.218-223
• /
• 2004

P-type $\beta$-FeSi$_2$ with a nominal composition of $Fe_{0.92}Mn_{0.08}Si_2$ powders has been produced by mechanical alloying process. As-milled powders were spray dried and consolidated by atmospheric plasma thermal spraying as a rapid sintering process. As-milled powders were of metastable state and fully transformed to $\beta$-$FeSi_2$ phase by subsequent isothermal annealing. However, as-thermal sprayed $Fe_{0.92}Mn_{0.08}Si_2$ consisted of untransformed mixture of $\alpha$-$Fe_2Si_{5}$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce transformation to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase. Isothermal annealing at $845^{\circ}C$ in vacuum gradually led to the thermoelectric semiconducting $\beta$-$FeSi_2$ phase transformation, but some residual metallic $\alpha$ and $\varepsilon$ phases were unavoidable even after prolonged annealing. Thermoelectric properties of $\beta$-$FeSi_2$ materials before and after isothermal annealing were evaluated. Seebeck coefficient increased and electric conductivity decreased with increasing annealing time due to the phase transition from metallic phases to semiconducting phases. Thermoelectric properties showed gradual increment, but overall properties appeared to be inferior to those of vacuum hot pressed specimens.

• Journal of Sensor Science and Technology
• /
• v.26 no.2
• /
• pp.96-100
• /
• 2017

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been extensively studied as the active material in ammonia gas sensor because of its fast response time, high conductivity and environmental stability. It is well known that a post annealing process for organic devices based on PEDOT:PSS significantly increases the device performance. In this study, we propose the solvent annealing of PEDOT:PSS and investigated its effects. As a results, post solvent annealing on PEDOT:PSS lead to the surface chemical and physical properties change. These changes result in improved conductivity of the PEDOT:PSS. In additional, ammonia sensitivity of solvent annealed PEDOT:PSS become higher than pristine polymer film. The enhancement is mainly caused by the depletion of gas barrier PSS and structural re-forming PEDOT networks. We believe that the post solvent annealing is a promising method to achieve highly sensitivity PEDOT:PSS films for applications in efficient, low-cost and flexible ammonia gas sensor.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.195-200
• /
• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.167-169
• /
• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.