• Title/Summary/Keyword: time annealing

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Photoluminescence from $Si^+-implanted \; SiO_2$ films on Crystalline Silicon (실리콘이온주입된 실리콘산화막의 광루미니센스에 관한 연구)

  • 김광희;이재희;김광일;고재석;최석호;권영규;이원식;이용현
    • Journal of the Korean Vacuum Society
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    • v.7 no.2
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    • pp.150-154
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    • 1998
  • Photoluminescence(PL), XRD, TEM results $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$ Si-implanted $SiO_2$ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400$\AA$ and 8360$\AA$ peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.

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Rapid Theraml Annealing Effect on the Magnetic Tunnel Junction with MgO Tunnel Barrier (MgO 절연막을 갖는 자기 터널 접합구조에서의 급속 열처리 효과)

  • Min, Kiljoon;Lee, Kyungil;Kim, Taewan;Jang, Joonyeon
    • Journal of the Korean Magnetics Society
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    • v.25 no.2
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    • pp.47-51
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    • 2015
  • To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.

Preparation of tetragonal phase L10 FePt thin films with H2 annealing atmosphere (수소 분위기 중 열처리법을 이용한 고자기이방성 L10 FePt 박막 제작)

  • Kong, Sok-Hyun;Kim, Kyung-Hwan
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.343-347
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    • 2007
  • Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

Room Temperature Annealing Process of Recoil Fragments in Neutron Irradiated Ammonium Chromate

  • Suh, In-Suck;Kim, Nak-Bae
    • Nuclear Engineering and Technology
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    • v.4 no.4
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    • pp.322-326
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    • 1972
  • The retention of $^{51}$ Cr was studied as chromate after dissolution of irradiated ammonium chromate with reactor exposure time and various storage time at room temperature. The annealing process of ammonium chromate depending on various storage time at room temperature follows first-order kinetics from zero time value to the pseudo-equilibrium value. The retention is increased with reactor irradiation time, also following first-order kinetics.

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Effect of Reverse Transformation on the Damping Capacity of High Manganease Austenitic Stainless Steel (고 Mn 오스테나이트계 스테인리스강의 감쇠능에 미치는 역변태의 영향)

  • Kang, C.Y.
    • Journal of Power System Engineering
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    • v.16 no.4
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    • pp.60-65
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    • 2012
  • This study was carried out to investigate the effect of reverse transformation on the damping capacity in high manganese austenitic stainless steel. ${\alpha}^{\prime}$-martensite was formed with the specific direction and surface relief by deformation. Over 95% of the austenite phase was transformed to deformation-induced ${\alpha}^{\prime}$-martensite by 70% cold rolling. Reverse transformation became rapid above an annealing temperature of $550^{\circ}C$, but there was no significant transformation above $700^{\circ}C$. In addition, with increasing annealing time at $700^{\circ}C$, reverse transformation was induced rapidly, but the transformation was almost completed at 10 min. Damping capacity was increased up to $700^{\circ}C$, and than unchanged with the increasing annealing temperature. Damping capacity increased steeply with an increasing reverse treatment time up to 10min, whereas there were no significant change with a treatment time of more than 10 min. Damping capacity increased with an increasing the reversed austenite and was strongly affected by reversed austenite.

Study of Growth and Temperature Dependence of SnS Thin Films Using a Rapid Thermal Processing (황화급속열처리를 이용한 SnS 박막성장 및 온도의존성 연구)

  • Shim, Ji-Hyun;Kim, Jeha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.95-100
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    • 2016
  • We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

Effect of Reverse Transformation on the Mechanical Properties of High Manganease Austenitic Stainless Steel (고 Mn 오스테나이트계 스테인리스강의 기계적 성질에 미치는 역변태의 영향)

  • Kang, C.Y.;Hur, T.Y.
    • Korean Journal of Metals and Materials
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    • v.50 no.6
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    • pp.413-418
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    • 2012
  • This study was carried out to investigate the effect of reverse transformation on the mechanical properties in high manganese austenitic stainless steel. Over 95% of the austenite was transformed to deformation-induced martensite by 70% cold rolling. Reverse transformation became rapid above an annealing temperature of $550^{\circ}C$, but there was no significant transformation above $700^{\circ}C$. In addition, with an increasing annealing time at $700^{\circ}C$, reverse transformation was induced rapidly, but the transformation was almost completed at 10 min. There was a rapid decrese in strength and hardness with annealing at temperature above $550^{\circ}C$, while elongation increased rapidly above $600^{\circ}C$. At $700^{\circ}C$, hardness and strength decreased rapidly, and elongation increased steeply with an increasing reverse treatment time up to 10 min, whereas there were no significant change with a treatment time after 10 min. The reverse-transformed austenite showed an ultra-fine grain size less than $0.2{\mu}m$, which made it possible to strengthen the high manganese austenitic stainless steel.

Minimizing the total completion time in a two-stage flexible flow shop (2 단계 유연 흐름 생산에서 평균 완료 시간 최소화 문제)

  • Yoon, Suk-Hun
    • Journal of Convergence for Information Technology
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    • v.11 no.8
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    • pp.207-211
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    • 2021
  • This paper addresses a two-stage flexible flow shop scheduling problem in which there is one machine in stage 1 and two identical machines in stage 2. The objective is the minimization of the total completion time. The problem is formulated by a mixed integer quadratic programming (MIQP) and a hybrid simulated annealing (HSA) is proposed to solve the MIQP. The HSA adopts the exploration capabilities of a genetic algorithm and incorporates a simulated annealing to reduce the premature convergence. Extensive computational tests on randomly generated problems are carried out to evaluate the performance of the HSA.

Microstructure and Magnetic Properties of Au-doped Finemet-type Alloy

  • Le, Anh-Tuan;Kim, Chong-Oh;Ha Nguyen Duy;Chau Nguyen;Tho Nguyen Duc;Lee, Hee-Bok
    • Journal of Magnetics
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    • v.11 no.1
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    • pp.36-42
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    • 2006
  • In this report, we demonstrate a comprehensive analysis of the effects of Au addition on the microstructure and magnetic properties of $Fe_{73.5}Si_{13.5}B_{9}Nb_{3}Au_1$ Finemet-type alloy. It was found that the as-quenched alloys were the amorphous state and turned into nanocrystalline state under heat treatments. The DSC analysis indicates that the sharply exothermal peak corresponding to the crystallization of the $\alpha-Fe(Si)$ was observed at $547-579^{\circ}C$ depending on the heating rates, which is little higher than that of original Finemet (542-$570{^{\circ}C}$, respectively). Besides, the thermomagnetic result confirmed that the full substitution of Cu by Au with the single phase structure in the M(T) curve along cooling cycle. Ultrasoft magnetic properties of the nanocrystallized samples were significantly enhanced by the proper annealing such as the increase of permeability and the decrease of the coercivity. The optimum annealing condition was found at the annealing temperature of $540^{\circ}C$ and the increase of the annealing time up to 90 min.

Effects of Post-deposition Annealing on the Copper Films Electrodeposited on the ECR Plasma Cleaned Copper Seed Layer (ECR plasma로 전처리된 Cu seed층 위에 전해도금 된 Cu 막에 대한 Annealing의 효과)

  • Lee, Han-seung;Kwon, Duk-ryel;Park, Hyun-ah;Lee, Chong-mu
    • Korean Journal of Materials Research
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    • v.13 no.3
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    • pp.174-179
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    • 2003
  • Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.