• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.69-73
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• 2010

Finite-element analyses were conducted to investigate the thermal stress in 3-dimensional stacked wafers package containing through-silicon-via (TSV), which is being widely used for 3-Dimensional integration. With finite element method (FEM), thermal stress was analyzed with the variation of TSV diameter, bonding diameter, pitch and TSV height. It was revealed that the maximum von Mises stresses occurred at the edge of top interface between Cu TSV and Si and the Si to Si bonding site. As TSV diameter increased, the von Mises stress at the edge of TSV increased. As bonding diameter increased, the von Mises stress at Si to Si bonding site increased. As pitch increased, the von Mises stress at Si to Si bonding site increased. The TSV height did not affect the von Mises stress. Therefore, it is expected that smaller Cu TSV diameter and pitch will ensure mechanical reliability because of the smaller chance of plastic deformation and crack initiation.

• Corrosion Science and Technology
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• v.17 no.5
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• pp.203-210
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• 2018

This paper compares the inhibition properties of aspartic and lactic acid salts with nitrite ions and their effect on critical chloride concentration. The tests were carried employing carbon steel specimens in saturated lime solution with varying pH in the range between13 to 13.6. The critical chloride concentration was estimated through multiple specimen potentiostatic tests at potentials in the usual range for passive rebar in the alkaline concrete of atmospheric structures. During tests, chloride salt was added every 48 h until all the specimens showed localized attacks. The cumulative distribution curves, i.e. the number of corroded specimens as a function of the chlorides concentration was obtained. Furthermore, IR spectra were recorded for the evaluation of the presence of the organic inhibitors on the passivity film. The results confirmed the inhibitory effect of 0.1M aspartate comparable with nitrite ions, at a similar concentration. Addition of calcium lactate did not result in an increase in the critical chloride concentration. However, the formation of a massive scale containing the substance that could reduce the corrosion propagation was observed.

• Korean Membrane Journal
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• v.8 no.1
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• pp.13-20
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• 2006

The production of CO-free hydrogen streams for feeding PEM-Fuel Cells using catalytic zeolite membrane reactors was analysed by means of selective oxidation. Tubular FAU (Na-Y) zeolite membranes, prepared by a secondary growth method and Pt-loaded, were used in a flow-through MR configuration. The catalytic tests were carried out at $200^{\circ}C$ and at different pressures with a simulated dry reformate shifted gas mixture ($H_2$ ca. 60%, CO 1 %, plus $O_2,\;N_2,\;CO_2$). The operative $O_2/CO$ stoichiometric equivalent feed ratio was ${\lambda}= 2$. These catalytic tests, reducing the CO concentration down to $10{\sim}50$ ppm, verified the possibility of MR integration after using a low temperature water-gas shift unit of a fuel processor to convert hydrocarbons into hydrogen-rich gas.

• Journal of the Korean Institute of Intelligent Systems
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• v.22 no.2
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• pp.161-167
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• 2012

This research deals with generating via points for autonomous navigation on a roadway for unmanned vehicles. When a vehicle plans a path from a starting point to a goal point, it should be able to map out which lane on which road it passes by. For this purpose, we should organize positional information of roads and save it as a database. This paper presents methods to save the database and to plan a shortest path to the goal by generating via points in consideration of the moving direction and the lane directions. Then we prove that the proposed algorithm can find the optimal path on the road through simulations.

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Journal of Korean Neurosurgical Society
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• v.65 no.1
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• pp.40-48
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• 2022

Objective : Placement of a single transverse stent via the nondominant A1 across the anterior communicating artery (AComA) into the contralateral A2 can provide sufficient neck coverage for wide-necked bifurcation AComA aneurysms. The authors described the feasibility, safety and long-term outcomes of this technique. Methods : Between January 2015 and February 2018, placement of a single transverse stent via the nondominant A1 was attempted in 17 wide-necked bifurcation AComA aneurysms. The authors reviewed the medical records and radiological studies. Results : The technical success rate was 94.1% (16/17). Periprocedural thromboembolic complications occurred in one patient (6.3%) without permanent neurological deficits. The mean clinical follow-up duration was 39.9±9.8 months. No deaths or delayed thromboembolic complications occurred. The mean angiographic follow-up duration was 38.9±9.8 months. The immediate and final follow-up complete occlusion rates were 87.4 and 93.7%, respectively. There was no recanalization during the follow-up period. Conclusion : Placement of a single transverse stent via the nondominant A1 across the AComA into the contralateral A2 is a feasible and relatively safe endovascular technique for the treatment of wide-necked bifurcation AComA aneurysms, with good long-term occlusion rates and a reasonable complication rate, if only the nondominant A1 is applicable.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.94-98
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• 2023

In the case of high-speed data transmission on high multilayer boards, signal coherence is a problem, especially due to the via hole, and a solution to improve return loss or insertion loss by applying a back drill to the via hole is being proposed. In this paper, Near-Field Electromagnetic measurements were made on a high multilayer board to determine how the presence or absence of back drill affects signal consistency. For this purpose, we used a signal generator, spectrum analyzer, and EMC scanner on a test board to determine if it is possible to distinguish between areas with and without back drill in the via holes of the stubs on the board. Also, we analyzed the measured value of S11, S21 and EMC etc. for how much it improves the signal attenuation of the stub with back drill. Through this, we knew that less electromagnetic waves are generated the stub via with back drill. At future research, we will analyze how much it improves the signal loss and electromagnetic waves due to the depth of back drill.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Journal of Chest Surgery
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• v.43 no.4
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• pp.421-423
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• 2010

A 52-year-old female presented with pain and swelling owing to recurrent inflammation on a generator pocket. She had undergone a permanent pacemaker implantation (DDD type) 7 years previously. We planned to insert a new pacemaker after removal of the previous generator and wires through a surgical approach. However, she had a history of the left modified radical mastectomy (MRM) with radiation therapy for breast cancer. For this patient, it would be difficult to care for the postoperative wound if we approached via the median sternotomy. Therefore, we decided to use a right atrial approach via a right thoracotomy. We removed the previous pacing wires through an atriotomy and inserted a new pacemaker using epicardial pacing leads without cardiopulmonary bypass.