• Title/Summary/Keyword: through-silicon via

Search Result 153, Processing Time 0.024 seconds

Analysis on the Performance and Temperature of the 3D Quad-core Processor according to Cache Organization (캐쉬 구성에 따른 3차원 쿼드코어 프로세서의 성능 및 온도 분석)

  • Son, Dong-Oh;Ahn, Jin-Woo;Choi, Hong-Jun;Kim, Jong-Myon;Kim, Cheol-Hong
    • Journal of the Korea Society of Computer and Information
    • /
    • v.17 no.6
    • /
    • pp.1-11
    • /
    • 2012
  • As the process technology scales down, multi-core processors cause serious problems such as increased interconnection delay, high power consumption and thermal problems. To solve the problems in 2D multi-core processors, researchers have focused on the 3D multi-core processor architecture. Compared to the 2D multi-core processor, the 3D multi-core processor decreases interconnection delay by reducing wire length significantly, since each core on different layers is connected using vertical through-silicon via(TSV). However, the power density in the 3D multi-core processor is increased dramatically compared to that in the 2D multi-core processor, because multiple cores are stacked vertically. Unfortunately, increased power density causes thermal problems, resulting in high cooling cost, negative impact on the reliability. Therefore, temperature should be considered together with performance in designing 3D multi-core processors. In this work, we analyze the temperature of the cache in quad-core processors varying cache organization. Then, we propose the low-temperature cache organization to overcome the thermal problems. Our evaluation shows that peak temperature of the instruction cache is lower than threshold. The peak temperature of the data cache is higher than threshold when the cache is composed of many ways. According to the results, our proposed cache organization not only efficiently reduces the peak temperature but also reduces the performance degradation for 3D quad-core processors.

Characterization of Potential Plant Growth-promoting Rhizobacteria as Biological Agents with Antifungal Activity, Plant Growth-promoting Activity, and Mineral Solubilizing Activity (항진균 활성, 식물 생장촉진 활성, 미네랄 가용화능을 가진 생물학적 제제로서 잠재적 식물 생장촉진 근권세균의 특성조사)

  • Lee, Song Min;Kim, Ji-Youn;Kim, Hee Sook;Oh, Ka-Yoon;Lee, Kwang Hui;Lee, Sang-Hyeon;Jang, Jeong Su
    • Journal of Life Science
    • /
    • v.31 no.7
    • /
    • pp.641-653
    • /
    • 2021
  • The purpose of this study was to confirm the antifungal activity, plant growth-promoting activity, and mineral solubilizing activity of 18 types of bacteria isolated purely from rhizosphere soil. The potential of isolates of the genus Bacillus and Pseudomonas as biocontrol agents was confirmed through the antifungal activity of these isolates. This activity has been determined to be due to various hydrolytic enzymes on the cell wall of plant pathogenic fungi and the production of siderophores in isolates. In addition, most of the isolates have been found to have aminocyclopropane-1-carboxylate deaminase production activity, indole-3-acetic acid production activity, and nitrogen fixation activity. These characteristics are believed to have a positive effect on root development, growth, and the productivity of crops via a reduction in the concentration of ethylene under conditions of environmental stress, to which plants are commonly exposed. In addition, on testing for the solubilizing activity of the isolates for phosphoric acid, silicon, calcium carbonate, and zinc, some isolates were found to have mineral solubilizing activities. Inoculation of these isolates during plant growth is expected to assist plant growth by converting nutrients necessary for growth into usable forms that can be absorbed by plants. The 18 isolated strains can be used as biocontrol agents due to their antifungal activity, plant growthpromoting activity, and mineral solubilizing activity.

The Development of an Electroconductive SiC-ZrB2 Composite through Spark Plasma Sintering under Argon Atmosphere

  • Lee, Jung-Hoon;Ju, Jin-Young;Kim, Cheol-Ho;Park, Jin-Hyoung;Lee, Hee-Seung;Shin, Yong-Deok
    • Journal of Electrical Engineering and Technology
    • /
    • v.5 no.2
    • /
    • pp.342-351
    • /
    • 2010
  • The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40, 45 and 50 vol. % of zirconium diboride ($ZrB_2$) powders with silicon carbide (SiC) matrix. The SiC-$ZrB_2$ composites and the sintered compacts were produced through spark plasma sintering (SPS) under argon atmosphere, and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via x-ray diffraction (XRD) analysis. The apparent porosity of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were 7.2546, 0.8920, 0.6038, 1.0981, and 10.0108%, respectively. The XRD phase analysis of the sintered compacts demonstrated a high phase of SiC and $ZrB_2$. Among the $SiC+ZrB_2$ composites, the SiC+50vol.%$ZrB_2$ composite had the lowest flexural strength, 290.54MPa, the other composites had more than 980MPa flexural strength except the SiC+30vol.%$ZrB_2$ composite; the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 1011.34MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had positive temperature coefficient resistance (PTCR). The V-I characteristics of the SiC-$ZrB_2$ composites had a linear shape in the temperature range from room to $500^{\circ}C$. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were $4.573\times10^{-3}$, $1.554\times10^{-3}$, $9.365\times10^{-4}$, $6.999\times10^{-4}$, and $6.069\times10^{-4}\Omega{\cdot}cm$, respectively, at room temperature, and their resistance temperature coefficients were $1.896\times10^{-3}$, $3.064\times10^{-3}$, $3.169\times10^{-3}$, $3.097\times10^{-3}$, and $3.418\times10^{-3}/^{\circ}C$ in the temperature range from room to $500^{\circ}C$, respectively. Therefore, it is considered that among the sintered compacts the SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites containing the most outstanding mechanical properties as well as PTCR and V-I characteristics can be used as an energy friendly ceramic heater or ohmic-contact electrode material through SPS.