• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5C
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• pp.706-715
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• 2004

In this paper, to decide the watermark embedding positions and embed the watermark we use the subband tee structure which is presented in the wavelet domain and the edge information in the spatial domain. The significant frequency region is estimated by the subband searching from the higher frequency subband to the lower frequency subband. LH1 subband which has the higher frequency in tree structure of the wavelet domain is divided into 4${\times}$4 submatrices, and the threshold which is used in the watermark embedding is obtained by the blockmatrix which is consists by the average of 4${\times}$4 submatrices. Also the watermark embedding position, Keymap is generated by the blockmatrix for the energy distribution in the frequency domain and the edge information in the spatial domain. The watermark is embedded into the wavelet coefficients using the Keymap and the random sequence generated by LFSR(Linear feedback shift register). Finally after the inverse wavelet transform the watermark embedded image is obtained. the proposed watermarking algorithm showed PSNR over 2㏈ and had the higher results from 2％ to 8％ in the comparison with the previous research for the attack such as the JPEG compression and the general image processing just like blurring, sharpening and gaussian noise.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.4A
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• pp.352-360
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• 2008

Recently Task Group (TG) 4 of the Institute of Electrical and Electronics Engineers (IEEE) 802.15a has been recommended a system with ranging capability in existence of multiple Simultaneous operating piconets (SOPs) as well as low-cost, low-power. According to the ranging service, coherent and non-coherent based ranging schemes using ternary code have been adopted as a standard. However it is hard to estimate an accurate time of arrival (TOA) in case of using direct sequence based TOA estimation method because pulse repetition interval (PRI) offered by TG is more limited than the maximum excess delay (MED) of channel. To mitigate inter pulse interference (IPI) problem, this paper proposes a non-coherent TOA estimation scheme using non-periodic transmission (NPT) pattern. The proposed receiver is based on a non-coherent energy detection considering with motivation of low rate wireless personal area network (LR-WPAN). TOA information is estimated via proper comparison with a prescribed threshold after the sliding correlation and search back window (SBW) process for reducing TOA error. To verify the performance of proposed ranging scheme, two distinct channel models approved by IEEE 802.15.4a TG are considered. According to the simulation results, we could conclude that the proposed scheme have performed better performance than the conventional method on the existence of multiple SOPs.

• Journal of the Korean Society of Radiology
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• v.11 no.7
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• pp.565-569
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• 2017

This research aims at measuring the changes in the dose rate of photoneutron occurring in the process of the investigation into the 10 MV photon beam with a linear accelerator. In addition, the life time of the photoneutron after the end of irradiation was to be analyzed. The photoneutron were measured with a $BF_3$ proportional counter, and the measurement results of the dose rate of the photoneutron were analyzed in 3 parts at intervals of 2 seconds. The measurement results showed that the photoneutron were generated fastest when there was no metal plate inside the radiation field and when there was a lead plate, and that, as for the time that shows the final dose rate at the level of background, the life time was about 1 minute and 40 seconds regardless of the kinds of materials. Therefore, the dose rate according to the time until the photoneutron run out was proved to be different depending on the sorts of the materials and the threshold energy. However, final life time showed similar results regardless of the kinds of the materials, it can be concluded that the kinds of materials don't get involved in the life time of photoneutron.

• Asian-Australasian Journal of Animal Sciences
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• v.28 no.6
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• pp.896-902
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• 2015

Milking center wastewater (MCW) has a relatively low ratio of carbon to nitrogen (C/N ratio), which should be separately managed from livestock manure due to the negative impacts of manure nutrients and harmful effects on down-stream in the livestock manure process with respect to the microbial growth. Simultaneous nitrification and denitrification (SND) is linked to inhibition of the second nitrification and reduces around 40% of the carbonaceous energy available for denitrification. Thus, this study was conducted to find the optimal operational conditions for the treatment of MCW using an attached-growth biofilm reactor; i.e., nitrogen loading rate (NLR) of 0.14, 0.28, 0.43, and $0.58kg\;m^{-3}\;d^{-1}$ and aeration rate of 0.06, 0.12, and $0.24\;m^3\;h^{-1}$ were evaluated and the comparison of air-diffuser position between one-third and bottom of the reactor was conducted. Four sand packed-bed reactors with the effective volume of 2.5 L were prepared and initially an air-diffuser was placed at one third from the bottom of the reactor. After the adaptation period of 2 weeks, SND was observed at all four reactors and the optimal NLR of $0.45kg\;m^{-3}\;d^{-1}$ was found as a threshold value to obtain higher nitrogen removal efficiency. Dissolved oxygen (DO) as one of key operational conditions was measured during the experiment and the reactor with an aeration rate of $0.12\;m^3\;h^{-1}$ showed the best performance of $NH_4-N$ removal and the higher total nitrogen removal efficiency through SND with appropriate DO level of ${\sim}0.5\;mg\;DO\;L^{-1}$. The air-diffuser position at one third from the bottom of the reactor resulted in better nitrogen removal than at the bottom position. Consequently, nitrogen in MCW with a low C/N ratio of 2.15 was successfully removed without the addition of external carbon sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.312-312
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• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Journal of Environmental Health Sciences
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• v.3 no.1
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• pp.27-44
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• 1976

This study was carried out to evaluate the harmful factors in working environments and to investigate the labor productivity after improvement of environments, surveying 93 industrial establishments of 10 industries located in Youngdeungpo industrial area in Seoul. The results obtained were as follows: 1) The highest noise level of 125dB(A) was indicated at the rolling process of transport equipment manufacturing industry. 2) The best illumination level was shown in precise machinery industry and the worst was indicated in rubber products, metallic products and transport equipment manufacturing industries. 3) Thermal conditions were above threshold limit value (TLV) at more than two processes of all industries except printing industry. 4) The highest dust concentration was determined in textile and wearing manufacturing industry. 5) Organic solvents were detected at 52 processes in 93 industrial establishments and 33 processes of them showed higher than TLV. The results about harmful chemicals were as follows: a) sulfur dioxide ($SO_2$)was determined higher than TLV on welding process of metallic product manufacturing industry and heat treatment process of transport equipment manufacturing industry. b) Carbon monoxide (CO) concentration was 700ppm at heat treatment process of transport equipment manufacturing industry, indicating 14 times of TLV. c) vinylchloride concentration in the air of PVC raw material mixing process and PVC preparation process of chemical product manufacturing industry was determined higher than TLV. d) Hydrochloride (HCl) concentration in the air of wire expanding process of transport equipment manufacturing industry was determined higher than TLV. 7) Higher values of lead concentration than TLV were determined at lead welding metallic product manufacturing industry and type planting process of process of printing industry, $1.8mg/m^3$ and $0.3mg/m^3$ respectively. 9) 22, 968 of 52, 855 workers (i.e. 43.5%) in 93 industries were exposed to various harmful agents. 10) It was found that the improvement of illumination in electric apparatus manufacturing industry (from 20~40 lux to 420 lux) resulted in an increase in productivity of 6.5% per capita and a decrease in faulty products of 19%. 11) Improvement of environments using local exhaust ventilation system resulted in a decrease of harmful substances lower than TLV and an increase in productivity of 11.4%. 12) Improvement of shovelling tools based on ergonomics resulted in a reduction in energy expenditure of 25.3% and an increase in productivity of 32.2% per capita.