• Elastomers and Composites
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• v.38 no.1
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• pp.81-87
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• 2003

In this work, $Fe_3O_4$ (magnetite), conductive filler was prepared from $FeCl_2{\cdot}4H_2O,\;(CH_2)_6N_4$ (hexamethylene tetramine), and $NaNO_2$, followed by mixing with crystallizable chloroprene rubber(CR). The influence of conductive filler content on the properties of the conductive composite was studied and temperature dependence of the electrical conductivity (${\sigma}$) was also investigated. It is found that the percolation threshold concept holds true for the conductive particle-filled composite where ${\sigma}$ indicates a nearly sharp increase when the fraction of magnetite in the mixture exceeds 27%. The temperature dependence of ${\sigma}$ is thermally activated blelow or at the $P_c$. Magnetite acts as reinforcement and conductive filler for CR rubber. Moreover, it is shown that the composite with magnetite of 50 phr gives the most significant mechanical properties for tensile strength and elongation at break, which is due to the formation of optimum physical interlock and crosslinking. The results of 100%, 200%, and 300% moduli suggest that the moduli are related with reinforcement effect of magnetite and viscosity of the blend.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1239-1241
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• 1995

The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about $4.0{\times}10^{12}/cm^2$ and $1.5{\times}10^{12}/cm^2$, while those of high-temperature processed poly-Si TFT are about $1.5{\times}10^{12}/cm^2$ and $1.2{\times}10^{12}/cm^2$, respectively.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.91-96
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• 1992

The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.120.1-120.1
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• 2015

We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.167.1-167.1
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• 2015

We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) was investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.25-26
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• 2011

In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47 $cm^2$/Vs, 1.20 and 0.82 V/dec, and 3.92 and 8.33 V respectively. To analyze the differences, we measured the contact resistances and the carrier concentrations using transfer length method (TLM) and Hall measurement.

• Journal of Oral Medicine and Pain
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• v.21 no.1
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• pp.25-36
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• 1996

To investigate the effect of low level laser therapy, the author selected 37 dental students with tender points in both masseters and trapeziuses, also measured maximum comportable opening(MCO), Numerical analog scale(NAS) and pressure pain threshold (PPT). 20 subjects were assigned randomly and were treated with GaAlAs diode laser after ultrasound. The other 17 subjects were treated with ultrasound and laser without irradiation. All the subjects were treated after 2 and 4 day respectively and were examined again after 6 days. And the obtained results were as follows : 1. The MCO of irradiated group increased more significantly after treatment than non-irradiated group. 2. The NAS of irradiated group decreased more significantly after treatment than non-irradiated group. 3. The PPT or irradiated group increased more significantly after treatment than non-irradiated group.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.3
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• pp.161-166
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• 2011

In this paper, for analysing the major factors giving the effect to the quality of HD level video on the multicasting service, we tried this test experiment on the College school network similar to the real service network environment. We measure the video quality distortion on the multicasting HD level video according to generating and increasing the broadcasting traffic on the situation that apply the QoS technique to the test network and not apply the QoS technique and then find out the threshold value of network factors giving the effect to the video quality distortion on the multicasting HD level video service. This paper can be used for guaranteeing the constant video quality and reducing the video quality distortion on the multicasting HD level video service.

• Journal of Mechanical Science and Technology
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• v.16 no.10
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• pp.1246-1252
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• 2002

Ultrafine grained (UFG) low carbon (0.15 wt.% C) steel produced by equal channel angula. pressing (ECAP) was tested for investigating the effect of load ratio on the fatigue crack growth rate. Fatigue crack growth resistance and threshold of UFG steel were lower than that of asreceived coarse grained steel. It was attributed to the less tortuous crack path. The UFG steel exhibited slightly higher crack growth rates and a lower △Kth with an increase of R ratio. The R ratio effect on crack growth rates and △Kth was basically indistinguishable at lower load ratio (R >0.3), compared to other alloys, which indicates that contribution of the crack closure vanishes. The crack growth rate curve for UFG steel exhibited a longer linear extension to the lower growth rate regime than that for the coarse grained as-received steel.