• Title/Summary/Keyword: threshold effect

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Simulation of Characteristics Analysis by Total Ionizing Dose Effects in Partial Isolation Buried Channel Array Transistor (부분분리 매립 채널 어레이 트랜지스터의 총 이온화 선량 영향에 따른 특성 해석 시뮬레이션)

  • Je-won Park;Myoung-Jin Lee
    • Journal of IKEEE
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    • v.27 no.3
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    • pp.303-307
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    • 2023
  • In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

Relation between body condition score and conception rate of Japanese Black cows

  • A. Setiaji;T. Oikawa;D. Arakaki
    • Animal Bioscience
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    • v.36 no.8
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    • pp.1151-1155
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    • 2023
  • Objective: This study analyzes interactions of body condition score (BCS) with other factors and the effect of BCS on estimates of genetic paremeters of conception rate (CR) in Japanese Black cows. Methods: Factors affecting CR were analyzed through the linear mixed model, and genetic parameters of CR were estimated through the threshold animal model. Results: The interactions between BCS and each season and the number of artificial inseminations (AI) was significant (p<0.05), but that between BCS and parity showed no significance for CR. High CR was observed with BCS 3 in autumn (0.56±0.01) and BCS 4 in summer (0.56±0.02). The highest CR with BCS 3 (0.56±0.02) and BCS 4 (0.55±0.01) was observed at first AI. With BCS 5, however, the highest CR (0.55±0.08) was observed at second AI. Conclusion: The model with BCS was notably conducive to the estimation of genetic parameters because of a low deviance information criterion of heritability that, nevertheless, was slightly lower than the model without BCS.

Impact of Financial Instability on Economic Activity: Evidence from ASEAN Developing Countries

  • TRAN, Tra Thi Van
    • The Journal of Asian Finance, Economics and Business
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    • v.9 no.1
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    • pp.177-187
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    • 2022
  • Theoretical literature agrees on the interaction between financial instability and economic activity but explains it's dynamic in two points of view: one is that the transmission mechanism occurs in one unique regime and the other reckons a shift of regime leads to the alteration of the transmission mechanism. This study aims to find evidence of the multi-regime transmission for ASEAN developing countries. The author employs the technique of Threshold vector auto regression using the financial stress index standing for financial instability. Monthly data is collected, covering a period long enough with many episodes of high stress in recent decades. There are two conclusions: (1) A financial shock has a negative and stronger impact on economic activity during a high-stress period than it does during a low-stress period; (2) the response of economic activity to a negative financial shock during high-stress periods is stronger than it is during normal times. The findings point to the importance of the financial stress index as an additional early warning indicator for the real economy sector, as well as the positive effect that a reduction in financial stress may have on economic activity, implying the importance of "unconventional" monetary policy in times of high financial stress.

Increase of Visual sensitivity by Zinc, Taurine, and Hypothermic-effect in Bullfrog's Eye (황소개구리 안구에서의 아연, 타우린, 저온효과에 의한 시각 감수성 증진)

  • Kim, Hyun Jung
    • Journal of Korean Ophthalmic Optics Society
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    • v.12 no.1
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    • pp.23-33
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    • 2007
  • It has been reported high concentrations of zinc and taurine in ocular tissue, especially the retina-choroid, and the presence of physiological levels of zinc and taurine in these tissues seem essential for their normal function. In addition, several studies have reported temperature as another effector to the visual sensitivity. But, in spite of many studies, there are still remained many questions about their function and correlation in visual adaptation system. The purpose of present study was to clarify these points using electroretinogram(ERG) recording and absorption spectra scanning, before and after zinc and taurine treatments and hypothermic-effect in bullfrog(Rana catesbeiana) which is one of the poikilothermal animal. The optimal zinc concentration used in this study was determined $10^{-4}M$ while the optimal taurine concentration was 10-5 M, and temperature change for hypothermic-effect went through '$25^{\circ}C {\rightarrow}0^{\circ}C{\rightarrow}25^{\circ}C$'. In ERG recording, it is obtained that dark-adapted threshold became elevated and b-wave amplitudes was increased with zinc and taurine treatment and hypothermic-effect. In absorption spectra scanning, there is distinct absorbance increment over the whole spectral range(400~750 nm) after zinc and taurine treatment and hypothermic-effect. Furthermore there are some synergism effects between zinc and taurine as well as between zinc and hypothermic-effect as a result of co-treatment, respectively.

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Effects of Doping Concentration of Polycrystalline Silicon Gate Layer on Reliability Characteristics in MOSFET's (MOSFET에서 다결정 실리콘 게이트 막의 도핑 농도가 신뢰성에 미치는 영향)

  • Park, Keun-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.2
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    • pp.74-79
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    • 2018
  • In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

The Combined Antiallodynic Effect of Gabapentin and Milnacipran in a Rat Neuropathic Pain Model (흰 쥐의 신경병증성 통증 모델에서 Gabapentin과 Milnacipran의 병용 효과)

  • Lee, Hyeon Jeong;Shin, Sang-Wook;Jang, Hee Jeong
    • The Korean Journal of Pain
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    • v.20 no.1
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    • pp.8-14
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    • 2007
  • Background: Anticonvulsants and antidepressants are adjuvant analgesic drugs that are used widely for treating chronic neuropathic pain syndromes. The combined analgesic effect of gabapentin and milnacipran was investigated with a rat neuropathic pain model. Methods: The rat neuropathic pain model was made by ligating the spinal nerves (L5 and L6). An intrathecal catheter was inserted into the subarachnoid space. Tactile allodynia was tested with the up-down method using von Frey hair. We determined the antiallodynic effect of intraperitoneal (I.P.) and intrathecal (I.T.) gabapentin. The combined effect of I.P. gabapentin (50 mg/kg) and milnacipran (0, 10 and 30 mg/kg) was investigated. Results: Intraperitoneal and intrathecal administration of gabapentin increased the threshold for tactile allodynia (the ED50 was 60.6 mg/kg and $45.5{\mu}g$, respectively). Co-administration of I.P. milnacipran increased the antiallodynic effect of I.P. gabapentin in a dose-dependent fashion. Conclusion: The combined administration of milnacipran and gabapentin may increase the total analgesic effect during treatment of neuropathic pain.

Effects of Acanthopanax Senticosus and Onion Mixture Extract on the Collagen-induced Arthritis in Rat Model (가시오가피와 양파 혼합 추출물이 Collagen 유발 관절염에 미치는 영향)

  • Kim, Kyung-Yoon;Sim, Ki-Cheol;Kim, Gye-Yeop;Choi, Chan-Hun;Jung, Jai-Gon;Chung, Jae-Sun;Jeong, Hyun-Woo
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.25 no.6
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    • pp.1000-1007
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    • 2011
  • This study was conducted to determine the analgesic effect of onion and acanthopanax senticosus mixture extract using the rheumatoid arthritis rat model. Rheumatoid arthritis model was made by the intradermal injection of type II collagen emulsified. Rats were divided into four groups: (1) Sham group(n=5), (2) Control group(administered DW 3 $m{\ell}$/1 day after RA induced, n=7), (3) Experimental group I(administered Onion extractor 600 mg/3 $m{\ell}$/1 day after RA induced, n=7). (4) Experimental group III(administered Onion and Acanthopanax senticosus mixture extractor 600 mg/3 $m{\ell}$/1 day after RA induced, n=7). After that, we examined the arthritic index, paw edema, pain threshold at 1st, 14th, 28th days. And also we examined histopathologic study(safranin-O green), immunohistochamical stain(COX-2) of knee joint at 28th days. Arthritic index, paw edema and pain threshold test were decrease in experimental group I, II than control group. Especially group II was most significantly inhibit effect than the other groups at 28th days. On the histopathologic view, all experimental groups were relieved and reproduced the erosion of arthritic site compared with control group. All experimental groups were COX-2 positive cells in the immunohistological stain of the knee joint were significantly decreased compared with control group. Especially group II was most significantly decreased than the other groups at 28th days. Onion and Acanthopanax senticosus mixture extractor can be used for curing rheumatoid arthritis. Anti-inflammatory effects may be somewhat better in combination of Onion and Acanthopanax senticosus.

Survey on the Use of MP3 Players of High School Students and the Effect to Their Hearing Thresholds (설문지를 통한 고등학생들의 MP3 사용 실태 및 청력에 미치는 영향)

  • Hong, Ha Na;Kang, Tong Ho;Hong, Bin Na
    • The Journal of the Acoustical Society of Korea
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    • v.32 no.1
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    • pp.56-63
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    • 2013
  • This study surveyed MP3 player usage and evaluated its effect on hearing thresholds in high school students. It is reported an increase in risk factors for hearing loss in adolescents that paralleled the increase in sales of MP3 players. A total of 538 students in two high schools in Gwangju province participated in this study. The students completed questionnaires about their MP3 player use and their pure tone hearing thresholds were tested at several frequencies. The questionnaire results indicated that 61.1%, of the students listened to music on MP3 players for more than one hour per day, 71.6% listened for four or more days per week, and 36.7% had listened for more than 3 years. Listening at a high volume of 60% of the maximum level was reported by 51% and they recognized having ear pains. The pure tone hearing threshold was found to be raised for the adolescents who had a long history of MP3 listening at high volume (p< 0.0001).

An analytical modeling for the two-dimensional field effect of a short channel GaAs MESFET and SOI-structured Si JFET (단채널 GaAs MESFET 및 SOI 구조의 Si JFET의 2차원 전계효과에 대한 해석적 모델에 대한 연구)

  • Choi Jin-Wook;Ji Soon-Koo;Choi Soo-Hong;Suh Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.1
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    • pp.25-32
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    • 2005
  • In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.

The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors

  • Kim, Hyeong-Jun;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.289.2-289.2
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    • 2016
  • In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

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