• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.671-674
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• 2009

In this work, high-aspect-ratio graphite nanofibers (GNFs) were used to improve the electrical, thermal, and mechanical properties of the poly(methyl methacrylate) (PMMA) polymer, as well as those of PMMA composites suitable for use in bipolar plates. In the result, an electrical percolation threshold for the composites was formed between 1 and 2 wt% GNF content. This threshold was found to be influenced strongly by the three separate stages of the meltblending process. The composites exhibited higher thermal and mechanical properties and lower thermal shrinkage compared with the neat PMMA. Thus, GNFs were demonstrated to have positive impacts on the thermo-mechanical properties of PMMA composites and showed, thereby, reasonable potential for use in composites employed in the fabrication of bipolar plates.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.10
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• pp.4625-4641
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• 2016

The performances of two commonly used feature detectors for wireless energy-harvesting cognitive radio systems are compared with the energy detector under energy causality and collision constraints. The optimal sensing duration is obtained by analyzing the effect of the detection threshold on the average throughput and collision probability. Numerical examples show that the covariance detector has the optimal sensing duration depending on an appropriate choice of the detection threshold, but no optimal sensing duration exists for the ratio of average energy to minimum eigenvalue detector.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.401-406
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• 1997

This paper presents preliminary results on the degradation of BJTs(Bipolar Junction Transistors) and MOSFETs(Metal Oxide Semiconductor Field Effect Transistors) by 1MeV electron beam. Exposure experimental results show that the change of minority-carrier life time in base region dominates the behavior of BJTs and that the buildup of charges in oxide region can affect the value of threshold voltage for MOSFETs. It was possible to correlate the decrease of the minority-carrier life time of BJTs with irradiation dose, while the shift of MOSFETs' threshold voltage was not only a function of charge buildup in oxide region.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.141-145
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• 2021

The brightness of the Organic Light Emitting Diode (OLED) display is controlled by thin-film transistors (TFTs). Regardless of the materials and the structures of TFTs, an OLED suffers from the instable threshold voltage (V_th) of a TFT during operation. When designing an OLED pixel with circuit simulation tool such as SPICE, a designer needs to take V_th shift into account to improve the reliability of the circuit and various compensation methods have been proposed. In this paper, the effect of the compensation circuits from two typical OLED pixel circuits proposed in the literature are studied by the transient simulation with a SPICE tool in which the stretched-exponential time dependent V_th shift function is implemented. The simulation results show that the compensation circuits improve the reliability at the beginning of each frame, but V_th shifts from all TFTs in a pixel need to be considered to improve long-time reliability.

• Fisheries and Aquatic Sciences
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• v.26 no.8
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• pp.514-523
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• 2023

The visible threshold of Oreochromis niloticus responded to high light intensity under short wavelengths, whereas the response to low light intensity under long wavelengths was low, with a minimum visual threshold of 574 nm of LED lights. Movement distance of O. niloticus was dropped at 31℃ and increased abnormally at 37℃ under natural light. Comparing movement distance under red (622 nm) and green (518 nm) lights of LED, movement distance and swimming speed under red and green lights were higher than under natural light. However, the movement distance decreased rapidly at 31℃ under red light and lowest at 33℃ under green light. After that, there was a tendency to adapt to high water temperatures gradually. Consequently, red and green lights may be recommended for O. niloticus's aquaculture because the red and green lights have a positive effect on growth performance, survival rate, and metabolism, as shown in previous studies. It is necessary to control the water temperature below 32℃ because abnormal behavior above 32℃ revealed under red and green LED lights and natural light.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.87-91
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• 2022

Bokeh effect is a stylistic technique that can produce blurring the background of photos. This paper implements to produce a bokeh effect with a single image by post processing. Generating depth map is a key process of bokeh effect, and depth map is an image that contains information relating to the distance of the surfaces of scene objects from a viewpoint. First, this work presents algorithms to determine the depth map from a single input image. Then, we obtain a sparse defocus map with gradient ratio from input image and blurred image. Defocus map is obtained by propagating threshold values from edges using matting Laplacian. Finally, we obtain the blurred image on foreground and background segmentation with bokeh effect achieved. With the experimental results, an efficient image processing method with bokeh effect applied using a single image is presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.139-145
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• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• PNF and Movement
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• v.21 no.1
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• pp.63-74
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• 2023

Purpose: This study aims to compare hamstring flexibility and pressure pain threshold (PPT) after an intervention with proprioceptive neuromuscular facilitation contract-relax (PNF CR) technique, myofascial release (MFR), and a massage gun (MG), as well as to verify the effectiveness of the MG. Methods: This study recruited 36 participants (22 males and 14 females) with shortening of less than 70 degrees upon a straight leg raise (SLR) test, and they were randomly assigned to one of the PNF, MG, and MFR groups, each of which underwent its own protocol for 30 minutes. Flexibility of the hamstring was measured after the intervention using the active and passive knee extension (AKE and PKE) test, the sit and reach test, and PPT. Results: The AKE and PKE angles significantly decreased, as well as significantly increased in flexibility when each of the PNF, MFR, and MG interventions was performed (p<0.05). In addition, there was no significant difference among groups. However, according to the Cohen's D effect size, the MG demonstrated the largest effect size in AKE (d = 1.41) and PNF demonstrated the largest effect size in PKE (d = 1.66) and flexibility (d = 0.63). Conclusion: All interventions used in our study are effective in increasing hamstring flexibility. Based on the Cohen's D effect size, an MG is beneficial to increase the AKE, whereas PNF CR technique is recommended for increasing PKE and flexibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.86-89
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• 1995

In this pacer, The effect of the impedances in SNOSEFT s memory devices has been developed. The effect of source and drain impedances are measuring using the method of the field effect bias resistance in the inner resistance regions of the device structure and external bias resistance. The effect of impedance by source and drain resistance shows according to increasing to the storage of memory charges, shows according to a function of decreasing to the gate voltages, shows the delay of threshold voltages, The delay time of low conductance state and high conductance state by the impedance effect shows 3 [${\mu}$sec] and 1[${\mu}$sec] respectively.