• The Korean Journal of Physiology and Pharmacology
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• v.10 no.5
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• pp.255-261
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• 2006

Melittin-induced nociceptive responses are mediated by selective activation of capsaicin-sensitive primary afferent fibers and are modulated by excitatory amino acid receptor, cyclooxygenase, protein kinase C and serotonin receptor. The present study was undertaken to investigate the peripheral and spinal actions of voltage-gated calcium channel antagonists on melittin-induced nociceptive responses. Changes in mechanical threshold and number of flinchings were measured after intraplantar (i.pl.) injection of melittin $(30\;{\mu}g/paw)$ into mid-plantar area of hindpaw. L-type calcium channel antagonists, verapamil [intrathecal (i.t.), 6 or $12\;{\mu}g$; i.pl.,100 & $200\;{\mu}g$; i.p., 10 or 30 mg], N-type calcium channel blocker, ${\omega}-conotoxin$ GVIA (i.t., 0.1 or $0.5\;{\mu}g$; i.pl., $5\;{\mu}g$) and P-type calcium channel antagonist, ${\omega}-agatoxin$ IVA (i.t., $0.5\;{\mu}g$; i.pl., $5\;{\mu}g$) were administered 20 min before or 60 min after i.pl. injection of melittin. Intraplantar pre-treatment and i.t. pre- or post-treatment of verapamil and ${\omega}-conotoxin$ GVIA dose-dependently attenuated the reduction of mechanical threshold, and melittin-induced flinchings were inhibited by i.pl. or i.t. pre-treatment of both antagonists. P-type calcium channel blocker, ${\omega}-agatoxin$ IVA, had significant inhibitory action on flinching behaviors, but had a limited effect on melittin-induced decrease in mechanical threshold. These experimental findings suggest that verapamil and ${\omega}-conotoxin$ GVIA can inhibit the development and maintenance of melittin-induced nociceptive responses.

• Journal of Digital Convergence
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• v.16 no.11
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• pp.543-551
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• 2018

This study investigated the effects of corrective exercise and TECAR on cervical alignment, pain threshold, and pain in forward head posture patients. The subject includes 30 forward head posture patients. In the intervention methods, the experimental group combined corrective exercise and TECAR treatment. Only the corrective exercise was applied to the control group. Assessments were made on cervico vertebra angle (CV angle), pain pressure threshold (PPT) and neck disability index (NDI) visual analog scale (VAS). The intervention was conducted six times a week for two weeks. Both groups showed significant differences in CV angle, PPT, NDI, and VAS. Also, PPT, NDI, and VAS excluding CV angle were significantly improved in the study group compared to the control group. These results suggest that the intervention method that combines corrective exercise and TECAR treatment has a more positive effect on pain and ADL ability of forward head posture patient.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.141.1-141.1
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.128-128
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• 2013

• 전기의세계
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• v.25 no.1
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.16-16
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• 2002

Granular metal-insulator alloys, consisting of nano-scale magnetic particles in an insulating matrix are of unique consideration for the technological application and fundamental physics. They display a wide variety of unusual both linear and nonlinear electric-transport, optical and magnetooptical properties, especially for compositions close to the percolation threshold. (omitted)

• Journal of the Institute of Convergence Signal Processing
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• v.7 no.3
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• pp.95-101
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• 2006

A face detection plays an important role in face recognition, video surveillance, and human computer interaction. In this paper, we propose a progressive threshold method to detect human faces in real time. The consecutive face images are acquired from camera and transformed into YCbCr color space images. The skin color of the input images are separated using a skin color filter in the YCbCr color space and some candidated face areas are decided by connected component analysis. The intensity equalization is performed to avoid the effect of many circumstances and an arbitrary threshold value is applied to get binary images. The eye area can be detected because the area is clearly distinguished from others in the binary image progressive threshold method searches for an optimal eye area by progressively increasing threshold from low values. After progressive thresholding, the eye area is normalized and verified by back propagation algorithm to finalize the face detection.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.731-733
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• 2012

Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

• Journal of the Korean Society of Physical Medicine
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• v.9 no.4
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• pp.433-438
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• 2014

PURPOSE: The purpose of our study was to compare a 975-nm, 500-mW GaAlAs low-level laser therapy versus placebo low-level laser therapy with regard to the immediate changes on the myofascial trigger point of the dominant upper trapezius muscle in subjects with rounded shoulder posture. METHODS: Thirty-two male college students with rounded shoulder posture and shoulder pain consented to participate in the experiment. The subjects were randomly assigned to a 2-minute procedure with either an active GaAlAs low-level laser or a placebo GaAlAs low-level laser. The pressure-pain threshold and visual analog scale on tenderness at 3 kg were measured with an algometer before and after the laser treatments. RESULTS: The active GaAlAs low-level laser group showed significant changes in pressure-pain threshold and visual analog scale on tenderness at 3 kg (p<0.05). The placebo GaAlAs low-level laser group showed no significant changes in either pressure-pain threshold or visual analog scale on tenderness at 3 kg (p>0.05). CONCLUSION: An immediate effect was observed in pressure-pain threshold and visual analog scale on tenderness at 3 kg following a 2-minute application ($857.14J/cm^2$) of a 975-nm, 500-mW GaAlAs low-level laser to the myofascial trigger point of the dominant upper trapezius muscle in patients with rounded shoulder posture.