• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Journal of the Korean Regional Science Association
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• v.36 no.1
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• pp.3-16
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• 2020

Most of the Korean apartment complexes are considered as gated communities having characteristics such as self-sufficiency in service provision, self-governance and exclusiveness. Today the exclusionary features of apartment complexes are reinforced by a new practice of erecting gates against pedestrians in addition to the existing walls without considering implication of the practice over neighborhoods. Three groups of residents, those who live in low-rise residential areas without walls, apartment complexes with walls and apartment complexes with walls and gates were surveyed to measure the impact of the new exclusionary practice of gated communities on social sustainability of neighborhoods. Gates turn out to improve social sustainability indicators related to life quality but lower social cohesion of neighborhoods by lowering inclusiveness indicator considerably. The new apartment complexes with increased exclusiveness shake the established order of co-existence between low-rise residential areas and apartment complexes and strengthen spatial and social segregation within neighborhoods.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.564-568
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• 2006

Using the cross-gain modulation (XGM) characteristics of semiconductor optical amplifiers (SOAs), multi-functional all-optical logic gates, including XOR, AND, and OR gates are successfully simulated and demonstrated at 10Gbit/s. A VPI component maker^TM simulation tool is used for the simulation of multi-functional all-optical logic gates and the10 Cbit/s input signal is made by a mode-locked fiber ring laser. A multi-quantum well (MQW) SOA is used for the simulation and demonstration of the all-optical logic system. Our suggested system is composed of three MQW SOAs, SOA-1 and SOA-2 for XOR logic operation and SOA-2 and SOA-3 for AND logic operation. By the addition of two output signals XOR and AND, all-optical OR logic can be obtained.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.650-656
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• 2016

Voltage controlled oscillator (VCO) is widely used circuit component in high-performance microprocessors and modern communication systems as a frequency source. In present work, VCO designs using the different combination of NAND gates with three transistors and CMOS inverter are reported. Three, five and seven stages ring VCO circuits are designed. Coarse and fine tuning have been done using two different supply sources. The frequency with coarse tuning varies from 3.31 GHz to 5.60 GHz in three stages, 1.77 GHz to 3.26 GHz in five stages and 1.27 GHz to 2.32 GHz in seven stages VCO respectively. Moreover, for fine tuning frequency varies from 3.70 GHz to 3.94 GHz in three stages, 2.04 GHz to 2.18 GHz in five stages and 1.43 GHz to 1.58 GHz in seven stages VCO respectively. Results of power consumption and phase noise for the VCO circuits are also been reported. Results of proposed VCO circuits have been compared with previously reported circuits and present circuit approach show significant improvement.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.7
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• pp.2339-2355
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• 2021

In this paper, a joint probabilistic data association algorithm based on loss function (LJPDA) is proposed so that the computation load and accuracy of the multi-target tracking algorithm can be guaranteed simultaneously. Firstly, data association is divided in to three cases based on the relationship among validation gates and the number of measurements in the overlapping area for validation gates. Also the contribution coefficient is employed for evaluating the contribution of a measurement to a target, and the loss function, which reflects the cost of the new proposed data association algorithm, is defined. Moreover, the equation set of optimal contribution coefficient is given by minimizing the loss function, and the optimal contribution coefficient can be attained by using the Newton-Raphson method. In this way, the weighted value of each target can be achieved, and the data association among measurements and tracks can be realized. Finally, we compare performances of LJPDA proposed and joint probabilistic data association (JPDA) algorithm via numerical simulations, and much attention is paid on real-time performance and estimation error. Theoretical analysis and experimental results reveal that the LJPDA algorithm proposed exhibits small estimation error and low computation complexity.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.285-288
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• 2001

In this paper a design of cryptographic coprocessor which implements AES Rijndael algorithm is described. To achieve average throughput of 1 round per 5 clocks, subround pipelined scheme is applied. To apply the coprocessor to various applications, three key sizes such as 128, 192, 256 bits are supported. The cryptographic coprocessor is designed using 0.25${\mu}{\textrm}{m}$ CMOS technology and consists of about 36, 000 gates. Its peak performance is about 512 Mbps encryption or decryption rate under 200 Mhz clock frequency and 128-bit key ECB mode(AES-128ECB).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.11
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• pp.404-416
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• 1983

This paper is concerned with the design automation of the sequential machines. The operations of sequential machine can be diveded into two types such as synchronous and asynchronous sequential machine and their realization is treated in separate mode. But, in order to integrate logic circuits in high volume, mixed mode sequential machine uses common circuitry that consists of gates and flip-flops. Proposed sequential machine can be designed by several method, which are hard-wired implementation, firmware realization by PLA and ROM. And then onr example shows the differnces among three design mothods. Finally, computer algorithm(called MINIPLA) is discussed for various application of mixed-mode sequential machine.

• The KIPS Transactions:PartA
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• v.11A no.1
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• pp.1-10
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• 2004

A cellular array parallel multiplier with parallel-inputs and parallel-outputs for performing the multiplication of two polynomials in the finite fields GF$(2^m)$ is presented in this paper. The presented cellular way parallel multiplier consists of three operation parts: the multiplicative operation part (MULOP), the irreducible polynomial operation part (IPOP), and the modular operation part (MODOP). The MULOP and the MODOP are composed if the basic cells which are designed with AND Bates and XOR Bates. The IPOP is constructed by XOR gates and D flip-flops. This multiplier is simulated by clock period l${\mu}\textrm{s}$ using PSpice. The proposed multiplier is designed by 24 AND gates, 32 XOR gates and 4 D flip-flops when degree m is 4. In case of using AOP irreducible polynomial, this multiplier requires 24 AND gates and XOR fates respectively. and not use D flip-flop. The operating time of MULOP in the presented multiplier requires one unit time(clock time), and the operating time of MODOP using IPOP requires m unit times(clock times). Therefore total operating time is m+1 unit times(clock times). The cellular array parallel multiplier is simple and regular for the wire routing and have the properties of concurrency and modularity. Also, it is expansible for the multiplication of two polynomials in the finite fields with very large m.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.4
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• pp.375-387
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• 2015

This study investigates an economic and highly efficient power-converter topology and its modulation scheme for 60 kW rapid EV charger system. The target system is a three-phase three-switch buck-type rectifier topology. A new carrier-based PWM scheme, which is characterized by simple implementation using logic gates, is introduced in this paper. This PWM scheme replaces the diode rectifier equivalent switching state with an active switching state to produce the same effective current flowing path. As a result, the distortion of input current during the polarity reversal of capacitor line voltage can be mitigated. The proposed modulation technique is confirmed through simulation verification. The proposed modulation technique and its implementation scheme can expand the operation range of the three-phase three-switch buck-type rectifier with high-quality AC input and capacitor ripple current.