• 제목/요약/키워드: thin-layer method

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평면 초음파를 이용한 미소 간극 측정 (Thickness Measurement of A Thin Layer Using Plane Ultrasonic waves)

  • 김노유
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 추계학술대회 논문집
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    • pp.415-418
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    • 1995
  • This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave using ultrasonic pulse-echo method. The technique determines the thickness of a thin layer in a layered medium form the amplitudes of the total reflected waves from the back side layer of interst. Thickness of a very thin layer few inch deep inside the media can be measured without using a very high frequency ultrasonic transducer over 100MHz which must be used in the conventional techniques for the precision measurement of a thin layer. The method also requires no inversion process to extract the thickness from the waveform of the reflected waves, so that it makes possible on-line measurement of the thickness of the layer.

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Analysis of Bi-Superconducting Thin Films Fabricated by Using the Layer by Layer Deposition and Evaporation Deposition Method

  • Yang, Seung-Ho;Cheon, Min-Woo;Lee, Ho-Shik;Park, Yong-Pil
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 춘계종합학술대회
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    • pp.517-520
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    • 2007
  • The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

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순차 스퍼터법으로 제작한 BiSrCaCuO 박막의 부착 특성 (Sticking Characteristics in BiSrCaCuO Thin Film Fabricated by Layer-by-Layer Sputtering Method)

  • 천민우;박용필;김정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.45-48
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    • 2003
  • BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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Layer-by-Layer 증착법으로 제작한 $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$초전도 박막의 특성 (Characteristics of $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$ Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method)

  • 유선종;천민우;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2003년도 춘계종합학술대회
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    • pp.518-521
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    • 2003
  • Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

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Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

  • Kim, No-Hyu;Lee, Sang-Soon
    • 비파괴검사학회지
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    • 제23권6호
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    • pp.577-582
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    • 2003
  • This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process.

Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의 증착조건에 미치는 영향 (Effect of the hetero-epitaxial ZnO buffer layer for the formation of As-doped ZnO thin films)

  • 이홍찬;최원국;심광보;오영제
    • 센서학회지
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    • 제15권3호
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    • pp.216-221
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    • 2006
  • ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

XRD Patterns and Bismuth Sticking Coefficient in $Bi_2Sr_2Ca_nCu_{n+1}O_y(n\geq0)$ Thin Films Fabricated by Ion Beam Sputtering Method

  • Yang, Seung-Ho;Park, Yong-Pil
    • Journal of information and communication convergence engineering
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    • 제4권4호
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    • pp.158-161
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    • 2006
  • [ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

차등 3$\omega$ 기법을 이용한 다층 유전체 박막의 열전도도 측정 및 검증 (Measurement and Verification of Thermal Conductivity of Multilayer Thin Dielectric Film via Differential 3$\omega$ Method)

  • 신상우;조한나;조형희
    • 정보저장시스템학회:학술대회논문집
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    • 정보저장시스템학회 2005년도 추계학술대회 논문집
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    • pp.254-259
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    • 2005
  • In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential 3$\omega$ method. Also, verification of differential 3$\omega$ method has been accomplished with various proposed criteria. The target film for measurement is 300 nm silicon dioxide and this thin film is covered with various thicknesses of upper protective layer. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. However, the verification of differential 3$\omega$ method has not been conducted. Thus we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential 3$\omega$ method is verified to be reliable as long as the proposed preconditions are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between upper protective layer thickness and width of the heater line due to heat spreading effect.

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An Iterative Algorithm to Estimate LIDAR Ratio for Thin Cirrus Cloud over Aerosol Layer

  • Wang, Zhenzhu;Liu, Dong;Xie, Chenbo;Zhou, Jun
    • Journal of the Optical Society of Korea
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    • 제15권3호
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    • pp.209-215
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    • 2011
  • A new iterative algorithm is developed to estimate LIDAR ratio for a thin cirrus cloud over an aerosol layer. First, the thin cirrus cloud is screened out and replaced by a modeled LIDAR signal and the extinction coefficients of the aerosol layer are derived using the Fernald backward method. These aerosol coefficients are referred as the "actual values". Second, the original LIDAR signal which includes the thin cirrus cloud is also inverted by the Fernald backward method down to the aerosol layer but using different LIDAR ratio for the thin cirrus cloud. Depending on the different assumptions about the LIDAR ratio of the thin cirrus cloud, different sets of aerosol extinction can be derived. The "actual values" which are found in the first step can be used to constrain this iterative progress and the correct LIDAR ratio of the thin cirrus cloud can be found. The detailed description of this method and retrieval examples are given in the paper. The cases compared with other methods are presented and the statistical result is also shown and agrees well with other studies.

펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 연구 (Characteristics Investigation of ZnO-Si-ZnO Multi-layer Thin Films Fabricated by Pulsed Laser Deposition)

  • 강홍성;강정석;심은섭;방성식;이상렬
    • 한국전기전자재료학회논문지
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    • 제16권1호
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    • pp.65-69
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    • 2003
  • ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements