• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1168-1170
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• 1995

The purpose of this thesis is to fabricate the hexamethyldisiloxane thin film by plasma polymerization method, and to investigate the electric conduction characteristics of plasma polymerized thin film. Current density was measured in being changed annealing temperature(room temperature${\sim}125[^{\circ}C]$) and electric field intensity($10^5{\sim}1.2{\times}10^6$[V/cm]). The current density of thin films fabricated at discharge power of $30{\sim}90$[W] showed $1.3{\times}10^{-11}{\sim}3.1{\times}10^{-12}[A/cm^2]$ after 10 minutes of permission of electric field. The current density increased gradually with increasing of annealing temperature and electric field intensity. The electric conduction type of thin films fabricated in discharge power of 90[W] agreed with Schottky type.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.501-502
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• 2008

In this study, P-doped ZnO thin films were prepared on sapphire substrates by pulsed laser deposition and annealing method. The electrical properties were investigated as a function of annealing temperatures at a fixed oxygen pressure. The XRD measurement showed that p-doped ZnO thin films were c-axis oriented. The Hall measurement showed that p-type ZnO thin film was observed. The carrier concentration of $1.18{\times}10^{16}cm^{-3}$ and the mobility of $0.96\;cm^{-3}/Vs$ were obtained for the P-doped ZnO thin film fabricated annealing temperature $850^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1568-1570
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• 2009

Nanocrystalline silicon thin films were deposited using an internal-type inductively coupled plasma-chemical vapor deposition at room temperature by varying the bias power to the substrate and the structural characteristics of the deposited thin film were investigated. The result showed that the crystalline volume fraction was decreased with the increase of bias power. At the low bias power range of 0~60 W, the compress stress in the deposited thin film was in the range of -34 ~ -77 Mpa which is generally lower than the residual stress observed for the nanocrystalline silicon thin films deposited by capacitively coupled plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.518-524
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• 2001

We report the current limiting properties of superconducting fault current limiters (SFCL). Our SFCL was patterned in a spiral type on a YB $a_2$C $u_3$$O_{7-x}$(YBCO) film deposited using rf sputtering techniques and was coated with a gold shunt layer in order to disperse the heat generated at hot spots in the YBCO film. Current increased up to 13.5 $A_{peak}$ at 60 Hz for the voltage of 13 $V_{peak}$, which is the minimum quench point, and increased up to 17.6 $A_{peak}$ at 60 Hz fo the voltage fo 141.4 $V_{peak}$. The quench completion time was 5 msec at 13 $V_{peak}$ and 4 msec at 141. $V_{peak}$ respectively. we think that this architecture using spiral-type SFCL can be useful for the protection of the power delivery systems from fault currents.s. currents.s.

• New & Renewable Energy
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• v.3 no.4
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.