• Title/Summary/Keyword: thin-film type

Search Result 1,286, Processing Time 0.026 seconds

The Improvement of Fabrication Process for a-Si:H TFT's Yield (a-Si:H TFT의 수율 향상을 위한 공정 개선)

  • Hur, Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.6
    • /
    • pp.1099-1103
    • /
    • 2007
  • TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

Analysis of Capacitance and Mobility of ZTO with Amorphous Structure (비정질구조의 ZTO 박막에서 커패시턴스와 이동도 분석)

  • Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.20 no.6
    • /
    • pp.14-18
    • /
    • 2019
  • The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

Evaluation of Multi-Level Memory Characteristics in Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 Cell Structure (Ge2Sb2Te5/TiN/W-Doped Ge2Sb2Te5 셀 구조의 다중준위 메모리 특성 평가 )

  • Jun-Hyeok Jo;Jun-Young Seo;Ju-Hee Lee;Ju-Yeong Park;Hyun-Yong Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.37 no.1
    • /
    • pp.88-93
    • /
    • 2024
  • To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

Recent Progress in Air-Conditioning and Refrigeration Research : A Review of Papers Published in the Korean Journal of Air-Conditioning and Refrigeration Engineering in 2013 (설비공학 분야의 최근 연구 동향 : 2013년 학회지 논문에 대한 종합적 고찰)

  • Lee, Dae-Young;Kim, Sa Ryang;Kim, Hyun-Jung;Kim, Dong-Seon;Park, Jun-Seok;Ihm, Pyeong Chan
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.26 no.12
    • /
    • pp.605-619
    • /
    • 2014
  • This article reviews the papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during 2013. It is intended to understand the status of current research in the areas of heating, cooling, ventilation, sanitation, and indoor environments of buildings and plant facilities. Conclusions are as follows. (1) The research works on the thermal and fluid engineering have been reviewed as groups of fluid machinery, pipes and relative parts including orifices, dampers and ducts, fuel cells and power plants, cooling and air-conditioning, heat and mass transfer, two phase flow, and the flow around buildings and structures. Research issues dealing with home appliances, flows around buildings, nuclear power plant, and manufacturing processes are newly added in thermal and fluid engineering research area. (2) Research works on heat transfer area have been reviewed in the categories of heat transfer characteristics, pool boiling and condensing heat transfer and industrial heat exchangers. Researches on heat transfer characteristics included the results for general analytical model for desiccant wheels, the effects of water absorption on the thermal conductivity of insulation materials, thermal properties of Octadecane/xGnP shape-stabilized phase change materials and $CO_2$ and $CO_2$-Hydrate mixture, effect of ground source heat pump system, the heat flux meter location for the performance test of a refrigerator vacuum insulation panel, a parallel flow evaporator for a heat pump dryer, the condensation risk assessment of vacuum multi-layer glass and triple glass, optimization of a forced convection type PCM refrigeration module, surface temperature sensor using fluorescent nanoporous thin film. In the area of pool boiling and condensing heat transfer, researches on ammonia inside horizontal smooth small tube, R1234yf on various enhanced surfaces, HFC32/HFC152a on a plain surface, spray cooling up to critical heat flux on a low-fin enhanced surface were actively carried out. In the area of industrial heat exchangers, researches on a fin tube type adsorber, the mass-transfer kinetics of a fin-tube-type adsorption bed, fin-and-tube heat exchangers having sine wave fins and oval tubes, louvered fin heat exchanger were performed. (3) In the field of refrigeration, studies are categorized into three groups namely refrigeration cycle, refrigerant and modeling and control. In the category of refrigeration cycle, studies were focused on the enhancement or optimization of experimental or commercial systems including a R410a VRF(Various Refrigerant Flow) heat pump, a R134a 2-stage screw heat pump and a R134a double-heat source automotive air-conditioner system. In the category of refrigerant, studies were carried out for the application of alternative refrigerants or refrigeration technologies including $CO_2$ water heaters, a R1234yf automotive air-conditioner, a R436b water cooler and a thermoelectric refrigerator. In the category of modeling and control, theoretical and experimental studies were carried out to predict the performance of various thermal and control systems including the long-term energy analysis of a geo-thermal heat pump system coupled to cast-in-place energy piles, the dynamic simulation of a water heater-coupled hybrid heat pump and the numerical simulation of an integral optimum regulating controller for a system heat pump. (4) In building mechanical system research fields, twenty one studies were conducted to achieve effective design of the mechanical systems, and also to maximize the energy efficiency of buildings. The topics of the studies included heating and cooling, HVAC system, ventilation, and renewable energies in the buildings. Proposed designs, performance tests using numerical methods and experiments provide useful information and key data which can improve the energy efficiency of the buildings. (5) The field of architectural environment is mostly focused on indoor environment and building energy. The main researches of indoor environment are related to infiltration, ventilation, leak flow and airtightness performance in residential building. The subjects of building energy are worked on energy saving, operation method and optimum operation of building energy systems. The remained studies are related to the special facility such as cleanroom, internet data center and biosafety laboratory. water supply and drain system, defining standard input variables of BIM (Building Information Modeling) for facility management system, estimating capability and providing operation guidelines of subway station as shelter for refuge and evaluation of pollutant emissions from furniture-like products.

A Study on the Effect of O$_2$ annealing on Structural, Optical, and Electrical Characteristics of Undoped ZnO Thin Films Deposited by Magnetron Sputtering (산소 어닐링이 마그네 트론 스퍼터링으로 증착된 undoped ZnO박막의 구조적, 광학적, 전기적 특성에 미치는 영향에 대한 연구)

  • Yun, Eui-Jung;Park, Hyeong-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.46 no.7
    • /
    • pp.7-14
    • /
    • 2009
  • In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

LCD 연구 개발 동향

  • 이종천
    • The Magazine of the IEIE
    • /
    • v.29 no.6
    • /
    • pp.76-80
    • /
    • 2002
  • 'Liquid Crystal의 상전이(相轉移)와 광학적 이방성(異方性)이 1888년과 1889년 F. Reinitzer와 O. Lehmann에 의해 Monatsch Chem.과 Z.Physikal.Chem.에 각각 보고된 후 부터 제2차 세계대전이 끝난 뒤인 1950년대 까지는 Liquid Crystal을 단지실험실에서의 기초학문 차원의 연구 대상으로만 다루어 왔다. 1963년 Williams가 Liquid Crystal Device로는 최초로 특허 출원을 하였으며, 1968년 RCA사의 Heilmeier등은 Nematic 액정(液晶)에 저주파(低周波) 전압(電壓)을 인가하면 투명한 액정이 혼탁(混濁)상태로 변화하는 '동적산란(動的散亂)'(Dynamic Scattering) 현상을 이용하여 최초의 DSM(Dynamic Scattering Mode) LCD(Liquid Crystal Display)를 발명하였다. 비록 150V 이상의 높은 구동전압과 과소비전력의 특성 때문에 실용화에는 실패하였지만 Guest-Host효과와 Memory효과 등을 발견하였다. 1970년대에 이르러 실온에서 안정되게 사용 가능한 액정물질들이 합성되고(H. Kelker에 의해 MBBA, G. Gray에 의한 Cyano-Biphenyl 액정의 합성), CMOS 트랜지스터의 발명, 투명도전막(ITO), 수은전지등의 주변기술들의 발전으로 인하여 LCD의 상품화가 본격적으로 이루어지게 되었다. 1971년에는 M. Shadt, W. Helfrich, J.L. Fergason등이 TN(Twisted Nematic) LCD를 발명하여 전자 계산기와 손목시계에 응용되었고, 1970년대 말에는 Sharp에서 Dot Matrix형의 휴대형 컴퓨터를 발매하였다. 이러한 단순 구동형의 TN LCD는 그래픽 정보를 표시하는 데에는 품질의 한계가 있어 1979년 영국의 Le Comber에 의해 a-Si TFT(amorphous Silicon Thin Film Transistor) LCD의 연구가 시작되었고, 1983년 T.J. Scheffer, J. Nehring, G. Waters에 의해 STN(Super Twisted Nematic) LCD가 창안되었고, 1980년 N. Clark, S. Lagerwall 및 1983년 K.Yossino에 의해 Ferroelectric LCD가 등장하여 LCD의 정보 표시량 증대에 크게 기여하였다. Color화의 진전은 1972년 A.G. Ficher의 셀 외부에 RGB(Red, Green, Blue) filter를 부착하는 방안과, 1981년 T. Uchida 등에 의한 셀 내부에 RGB filter를 부착하는 방법에 의해 상품화가 되었다. 1985년에는 J.L. Fergason에 의해 Polymer Dispersed LCD가 발명되었고, 1980년대 중반에 이르러 동화상(動畵像) 표시가 가능한 a-Si TFT LCD의 시제품(試製品) 개발이 이루어지고 1990년부터는 본격적인 양산 시대에 접어들게 되었다. 1990년대 초에는 STN LCD의 Color화 및 대형화(大型化) 고(高)품위화에 힘입어 Note-Book PC에 LCD가 본격적으로 적용이 되었고, 1990년대 후반에는TFT LCD의 표시품질 대비 가격경쟁력 확보로 인하여 Note-Book PC 시장을 독점하기에 이르렀다. 이후로는 TFT LCD의 대형화가 중요한 쟁점으로 부각되고 있고, 1995년 삼성전자는 당시 세계최대 크기의 22' TFT LCD를 개발하였다. 또한 LCD의 고정세(高情細)화를 위해 Poly Si TFT LCD의 개발이 이루어졌고, 디지타이져 일체형 LCD의 상품화가 그 응용의 폭을 넓혔으며, LCD의 대형화를 위해 1994년 Canon에 의해 14.8', 21' 등의 FLCD가 개발되었다. 대형화 방안으로 Tiled LCD 기술이 개발되고 있으며, 1995년에 Sharp에 의해 21' 두장의 Panel을 이어 붙인 28' TFT LCD가 전시되었고 1996년에는 21' 4장의 Panel을 이어 붙인 40'급 까지의 개발이 시도 되었으며 현재는 LCD의 특성향상과 생산설비의 성능개선과 안정적인 공정관리기술을 바탕으로 삼성전자에서 단패널 40' TFT LCD가 최근에 개발되었다. Projection용 디스플레이로는 Poly-Si TFT LCD를 이용하여 $25'{\sim}100'$사이의 배면투사형과 전면투사형 까지 개발되어 대형 TV시장을 주도하고 있다. 21세기 디지털방송 시대를 맞아 플라즈마디스플레이패널(PDP) TV, 액정표시장치 (LCD)TV, 강유전성액정(FLCD) TV 등 2005년에 약 1500만대 규모의 거대 시장을 형성할 것으로 예상되는 이른바 '벽걸이TV'로 불리는 차세대 초박형 TV 시장을 선점하기 위하여 세계 가전업계들이 양산에 총력을 기울이고 있다. 벽걸이TV 시장이 본격적으로 형성되더라도 PDP TV와 LCD TV가 직접적으로 시장에서 경쟁을 벌이는 일은 별로 없을 것으로 보인다. 향후 디지털TV 시장이 본격적으로 열리면 40인치 이하의 중대형 시장은 LCD TV가 주도하고 40인치 이상 대화면 시장은 PDP TV가 주도할 것으로 보는 시각이 지배적이기 때문이다. 그러나 이러한 직시형 중대형(重大型)디스플레이는 그 가격이 너무 높아서 현재의 브라운관 TV를 대체(代替)하기에는 시일이 많이 소요될 것으로 추정되고 있다. 그 대안(代案)으로는 비교적 저가격(低價格)이면서도 고품질의 디지털 화상구현이 가능한 고해상도 프로젝션 TV가 유력시되고 있다. 이러한 고해상도 프로젝션 TV용으로 DMD(Digital Micro-mirror Display), Poly-Si TFT LCD와 LCOS(Liquid Crystals on Silicon) 등의 상품화가 진행되고 있다. 인터넷과 정보통신 기술의 발달로 휴대형 디스플레이의 시장이 예상 외로 급성장하고 있으며, 요구되는 디스플레이의 품질도 단순한 문자표시에서 그치지 않고 고해상도의 그래픽 동화상 표시와 칼라 표시 및 3차원 화상표시까지 점차로 그 영역이 넓어지고 있다. <표 1>에서 보여주는 바와 같이 LCD의 시장규모는 적용분야 별로 지속적인 성장이 예상되며, 새로운 응용분야의 시장도 성장성을 어느 정도 예측할 수 있다. 따라서 LCD기술의 연구개발 방향은 크게 두가지로 분류할 수 있으며 첫째로는, 현재 양산되고 있는 LCD 상품의 경쟁력강화를 위하여 원가(原價) 절감(節減)과 표시품질을 향상시키는 것이며 둘째로는, 새로운 타입의 LCD를 개발하여 기존 상품을 대체하거나 새로운 시장을 창출하는 분야로 나눌 수 있다. 이와 같은 관점에서 현재 진행되고 있는 LCD기술개발은 다음과 같이 분류할 수 있다. 1) 원가 절감 2) 특성 향상 3) New Type LCD 개발.

  • PDF