• Korean Journal of Materials Research
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• v.2 no.5
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• pp.353-359
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• 1992

Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.85-88
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• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Korean Journal of Optics and Photonics
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• v.28 no.1
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• pp.28-32
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• 2017

In this research, we designed an LSPR sensor based on a thin-film multilayer comprising $TiO_2$ and $SiO_2$. The thickness of the overall substrate layer of the suggested multilayer LSPR sensor is limited to 100 nm, and the number of repeating $TiO_2$ and $SiO_2$ thin films is 1-4 within a limited thickness. Additionally, a nanowire structure with a gold thin film of 40 nm, height of 40 nm, period of 600 nm, and line width of 300 nm was formed on the multilayer. To design the variable wavelength-type SPR, the angle was fixed at $75^{\circ}$ and the wavelength was changed. We then simulated the system with the finite-element method (FEM) using Maxwell's equations. It was confirmed that the resonance wavelength became shorter as the number of multilayers increased when the refractive index was fixed. We found that the wavelength changes were more sensitive. However, no changes were observed when the number of the multilayers was three or higher.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korean Home Economics Association
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• v.37 no.7
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• pp.29-43
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• 1999

The purpose of this study was to develop disposable diapers for the elderly in need by experimenting with wearing disposable diapers and analyzing the properties of materials of these diapers. The diapers were of two different types: one was a panty type for the elderly who were bed ridden, and the other was a pad type for the elderly who had incontinence. The subjects for the wearing test of the panty type were forty who were bed ridden, and there were forty subjects for the wearing test of the pad type who had incontinence. The disposable diapers for these experiments were chosen from those already found in the market place. Four panty types and three pad types were selected. From these experiments for the disposable diapers, the first prototypes were developed, and the second prototypes were proposed by experimenting with the first prototypes. The first panty prototype was designed to improve absorbing power, and we added waist rubber bands to prevent evacuation from back leaking and a frontal tape to prevent waistline film from tearing. The first pad prototype was designed to improve absorbing power also, and we added side rubber bands to prevent the side leaking and an adhesive tape on the fore part of the bottom to prevent the diapers from moving, and made the outline of the back area curved and thin to help hide the diaper from detection thus making the wearer feel better. From these test cases and analyzing the properties of materials with the first prototypes, we gained some success, but several points on further improvements were proposed to refine the final prototypes. The second panty prototype we proposed was to make 1he length longer, especially in the crotch area to prevent excess leaking and to fit the body more snugly. Also, the second pad prototype was proposed to reduce the total thickness of the diaper, and to improve the feeling and appearance.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.9
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• pp.70-77
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• 2006

We have fabricated an integrated three-phase flux-lock type SFCL, which consists of an YBCO($YB_a2Cu_3O_7$) thin film and a flux-lock reactor wound around an iron core of each phase. In order to apply the SFCL in a real power system, fault analyses for the three-phase system are essential. The short-circuit currents were effectively limited by adjusting the numbers of winding of each secondary coil and their winding directions. The flux flow generated in the iron core cancelled out under the normal operation due to the parallel connection between primary and secondary windings. However, the flux-lock type SFCL with same iron core was operated just after the fault due to the flux generating in the iron core. To analyze the current limiting characteristics, the additive polarity winding was compared with the subtractive one in the flux lock reactor. Whenever a single line-to-ground fault occurred in any phase, the peak value of the line current of the fault phase in the additive polarity winding increased up to about 12.87 times during the first-half cycle. On the other hand, the peak value in the subtractive polarity winding increased up to about 34.07 times under the same conditions. This is because the current flow between the primary and the secondary windings changed to additive or subtractive status according to the winding direction. We confirmed that the current limiting behavior in the additive polarity winding was more effective for a single-line-to-ground fault

• Journal of the Korean Solar Energy Society
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• v.37 no.2
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• pp.47-57
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• 2017

CIGS thin film solar cells are technically suitable for BIPV applications than regularly used crystalline silicon solar cells. Particularly, CIGS PV has lower temperature coefficient than crystalline silicon PV, thus decrease in power generation is lowered in CIGS PV. Moreover, CIGS PV can decrease shading loss when applied to the BIPV system, and the total annual power generation is higher than crystalline silicon. However, there are few studies on the installation factors affecting the performance of BIPV system with CIGS module. In this study, BIPV curtain wall unit with CIGS PV module was designed. To prevent increase of temperature of CIGS PV module by solar radiation, ventilation was considered at the backside of the unit. The thermal specification and electrical performance of CIGS PV of the ventilated unit was analyzed experimentally. Non-ventilated unit was also investigated and compared with ventilated unit. The results showed that the average CIGS temperature of the ventilated curtain wall unit was $6.8^{\circ}C$ lower than non-ventilated type and the efficiency and power generation performance of ventilated CIGS PV on average was, respectively, about 6% and 5.8% higher than the non-ventilated type.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.110-115
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• 2010

Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.9
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• pp.611-615
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• 2001

Y$_2$O$_3$ thin films have been proposed as a buffering insulator of metal/ferroelectric/insulator/semiconductor field effect transistor(MFISFET)-type ferroelectric random access memory (FRAM). In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma(ICP). The etch rates of $Y_2$O$_3$ and YMnO$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were 302$\AA$/min, and 2.4 at Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio of 0.2 respectively. Optical emission spectroscopy(OES) was used to understand the effects of gas combination on the etch rate of $Y_2$O$_3$ thin film. The surface reaction of the etched $Y_2$O$_3$ thin films was investigated by x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that there was chemical reaction between Y and Cl. This result was confirmed by secondary ion mass spectroscopy(SIMS) analysis.

• Membrane Journal
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• v.13 no.3
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• pp.162-173
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• 2003

The pseudo n-type polyaniline was prepared by doping of camphorsulfonic acid(CSA) and dodecylbenzenesulfonic acid(DBSA) as the dopants in solvent of N-methyl-2-pyrrolidinone(NMP). The dopants in polymer structure was qualitatively analyzed using FT-IR. The influence on electrochemical properties with dopant concentration of PANI film were investigated. The electrochemical characteristics of the n-type PANI electrode that coated on ITO were evaluated by cyclic voltammetry(CV) and AC impedance method. The prepared PANI were confirmed as n-type PANI from FT-IR and CV. The charge transfer resistance of film on PANI/CSA electrode were measured as 1.14{\sim}1.09k{\mu}$by AC impedance. The charge transfer resistance of PANI/DBSA electrode decreased with increasing the mole ratio of DBSA as 27.73{\sim}8.37 k{\mu}$. The double layer capacitance of PANI/CSA electrode was showed almost constant value as $13.47{\sim}14.59 {\mu}F$ and that of PANI/DBSA electrode increased with increasing mole ratio of DBSA from 0.49 to $1.20 {\mu}F$.