• Journal of the Korean Graphic Arts Communication Society
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• v.11 no.1
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• pp.103-122
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• 1993

A cause and counterplan of the increase in dark decay rate of$\varepsilon$-CuPc/PVCz photoreceptor which is consist of the carrier generation layer (CGL) of$\varepsilon$type copper phthalocyanine ($\varepsilon$-CuPc) thin film by an aqueous coating method and the carrier transport layer (CTL) of polyvinylcarbazol (PVCz) by spin coating, are studied in this paper. Electrochemical deposition of CGL was accompanied by an increase in work function of the aluminium substrate during the processes and the enhanced work function 5.3 eV rose above the ionization potential 5.16 eV of $\varepsilon$-CuPc. This resulted in the increased injection of holes from substrate into CGL and a fast dark decay rate. Improved photoreceptor, an electron-transport $\varepsilon$-CuPc/TNF photoreceptor, led to lowing of dark decay rate and increasing of photosensitivity. The carrier generation efficiency (ηg), carrier injection efficiency (ηi) and xerographic gain (G) of the $\varepsilon$-CuPc/TNF photoreceptor were obtained by XTOF method and PIDC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.140-141
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• 2007

To fabricate the metal-ferroelectric-insulator-semiconductor (MFIS) structure for the ferroelectric random access memory (FRAM) application, we prepared the ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ (SBT) and the insulator LaZrOx (LZO) thin films on the silicon substrate using a sol-gel method. In this study, we will investigate the feasibility of the SBT/LZO/Si structure as one of the promising gate configuration for the 1-transistor (1-T) type FRAM, by measurements of the electrical properties and the physical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.426-430
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• 2000

We have studied the field emission characteristics of multi-layered diamond-like-carbon (DLC) films deposited by vertical electrodes type plasma enhanced chemical vapor deposition with CH$_4$ and H$_2$ mixture. We deposited a thin layer of DLC on the p$^{+}$-Si substrate and then turned off plasma before another deposition of a new DLC layer. The thickness and the number of DLC layers are varied. The emission characteristics of multi-layered DLC films were compared with conventional one. The multi-layered DLC film shows higher emission current than conventional one.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.38-41
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• 2010

Compared to conventional molding technology, the color uniformity of light direction emitted from LED is improved with PCB type lead frame technology in which metal thin film is used and transfer molding technology which makes the density of phosphor uniform by manufacturing high density LED lamp. The light efficiency and the color uniformity of the LED are improved by molding the phosphor layer outside of chip and controlling the thickness of the phosphor layer. CIE x,y difference of LED in major axis is also improved uniformly from 0 to 90 degrees.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.338-339
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• 2012

This study examined the friction and wear behavior of diamond-like carbon (DLC) films deposited from a radio frequency glow discharge using a hydrogen diluted benzene gas mixture. The DLC films were deposited on Si (100) and polished stainless steel substrates by r.f.-PACVD at hydrogen to benzene ratios, or the hydrogen dilution ratio, ranging from 0 to 2.0. The wear test was carried out in both ambient and aqueous environments using a home-made ball-on-disk type wear rig. The stability of the DLC coating in an aqueous environment was improved by diluting the benzene precursor gas with hydrogen, suggesting that hydrogen dilution during the deposition of DLC films suppress the initiation of defects in the film and improved the adhesion of the coating to the interface.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.1-5
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• 2020

By adapting black body leadflame and thin film type Green A filter, we successfully demonstrated night vision imaging system (NVIS) Green A compatible LED. Fabricated NVIS compatible LEDs show small form factor compared to that of commercialized NVIS compatible LED. Especially, NVIS radiance and chromaticity of MIL-STD-3009 specification can be satisfied simultaneously and easily by controlling the color temperature of the white LED as well as the concentration of the Green A dye and the thickness of the Green A filter. The optimal dye concentration of the NVIS Green A filter is expected to be about 1 wt%. The results of this study are expected to contribute to miniaturization, weight reduction and localization of avionic display and lighting devices.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.359-362
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• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.45-51
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• 2010

We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.8
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• pp.5213-5218
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• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.