• Journal of the Korean Society for Heat Treatment
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• v.27 no.5
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.33-38
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• 2002

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.1
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• pp.37-42
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• 2012

LIFT (laser-induced forward transfer) is an advanced laser processing method used for selectively transferring micron-sized objects. In our study, this process was applied in order to deposit solder balls in microsystem packaging processes for electronics. Locally melted solder paste could be transferred to a rigid substrate using laser pulses. A thin glass plate with a solder cream layer was used as a donor film, and an IR laser pulse (wavelength = 1070 nm) was used to transfer a micron-sized solder ball to the receptor. Mass balance and energy balance were applied to analyze the shape and temperature profiles of the solder paste drops. The transferred solder bumps had measured diameters of 30-40 ${\mu}m$ and thicknesses of 50 ${\mu}m$ in our experiment. The limits and applications of this method are also presented.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.179-185
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• 2009

Diamond-like carbon(DLC) films were deposited by linear ion source(LIS)-physical vapor deposition method changing the anode voltages from 800 V to 1800 V, and characteristics of the films were investigated using residual stress tester, nano-indentation, micro raman spectroscopy, scratch tester and Field Emission Scanning Electron Microscope(FE-SEM). The results showed that the residual stress and hardness increased with increasing the ion energy up to anode voltage of 1400 V. It was also found that the content of $SP^3$ carbon increased with increasing the anode voltage $SP^3/SP^2$ ratio through investigation of $SP^3/SP^2$ ratio by the micro-raman analysis. From these results, it can be concluded that the physical properties of DLC films such as residual stress and hardness are increased with increasing the anode voltage. These results can be explained that 3-dimensional cross-links between carbon atoms and Dangling bond are enhanced and the internal compressive stress also increased with increasing the anode voltage. The optimal anode voltage is considered to be around 1400 V in these experimental conditions.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.333-337
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• 2013

This study proposes a simply fabricated micro stator for higher output power than previously reported micro stators. The stator has been fabricated by inserting enamel coil in silicon mold formed by micro etching process. The most merits of the proposed micro stator are the simple fabrication process and high output power. Previously reported micro stators have high resistance because the micro coil is fabricated by relatively thin-film-based deposition process such as sputtering and electroplating. In addition, the previously reported micro coil has many electrical contact points for forming the coil structure. These characteristics of the micro stator can lead to low performance in output power. However, the proposed micro stator adopts commercially available enamel coil without any contact point. Therefore, the enamel coil of the proposed micro stator has low junction resistance due to the good electrical quality compared with the deposited or electroplated metal coil. Power generation tests were performed and the fabricated stator can produce 5.4 mW in 4000 RPM, $1{\Omega}$ and 0.3 mm gap. The proposed micro stator can produce larger output power than the previously reported stator spite of low RPM and the larger gap between the permanent magnet and the stator.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.168-168
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• 2000

Yamada 등의 덩어리 증착에 관한 연구 이후 낮은 기판 온도에서 결정성이 뛰어난 금속박막성장(thin film growth)을 얻을 수 있는 방법으로 최근 덩어리 증착(cluster depositon) 방법에 관하여 많은 연구들이 진행되어 덩어리 충돌이 원자 충돌인 경우와 큰 차이를 보이는 결과를 얻었으며, 덩어리 증착시 기판 내부에 점결함(point defect)이 발생되지 않는다는 중요한 결과를 얻었다. 금속 덩어리를 사용한 금속박막성장은 높은 박막성장속도와 뛰어난 구조 재배열 효과를 얻을 수 있으며 기판의 격자 손상을 감소시키기 때문에 향후 나노미터 소자 개발에 응용성이 클 것으로 예상된다. 그러나 금속 덩어리와 금속 표면사이의 상호작용에서 발생되는 기본적인 역학(mechanism)은 분명하게 알려져 있지 않다. 지금까지 알루미늄 덩어리의 원자구조와 특성에 관한 연구는 수행되어졌지만 (4,5), 알루미늄 덩어리 증착에 관한 연구는 수행되지 않았다. 본 연구에서는 13~177개로 이루어진 큰 알루미늄 덩어리들의 증착에 관하여 Md(molecular dynamics) 방법을 사용하여 연구하였다. MD 시뮬레이션을 사용하여 덩어리 증착시 기판 표면과의 충돌 초기에 나타나는 덩어리 내부 원자들의 상관충돌효과(correlated collisions effect)에 의하여 덩어리 크기에 따른 증착현상과 여러 물리적 현상들을 관찰하였다. 덩어리 총 에너지가 증가할수록 기판의 최고 온도는 증가하며, 덩어리 크기가 클수록 상관충돌효과가 커지기 때문에 덩어리의 총 에너지에 다른 최고 증가 비율은 적어졌다. 시간에 따른 비정렬 원자수(disordered atom number) 비교를 통하여 덩어리가 클수록 구조 재배열이 더 잘 이루어진다는 것을 알 수 있었고, 원자당 에너지가 클수록 덩어리 원자들이 기판 내부로 더 깊이 들어갔고, 덩어리 크기가 클수록 상관충돌효과로 인하여 덩어리 원자들이 기판 내부로 더 깊이 들어가는 것을 알 수 있었고, 덩어리 크기가 클수록 상관충돌효과는 커지고 더욱 부드러운 증착이 이루어졌으며, 무엇보다도 덩어리 증착시 표면에서 구조 재배열이 잘 이루어지는 특징을 살펴볼 수 있었다. 이러한 알루미늄 덩어리를 생성하여 증착할 수 있을 경우, 뛰어난 재배열 효과를 이용하여 품질이 향상된 반도체 소자를 제조할 수 있을 것으로 사료된다.