• Title/Summary/Keyword: thin-cathode

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Built-in voltage depending on $Li_2O$ layer thickness in organic light-emitting diodes from the measurement of modulated photocurrent (변조 광전류 측정법을 이용하여 유기 발광 소자에서 $Li_2O$ 두께 변화에 따른 내장 전압)

  • Lee, Eun-Hye;Yoon, Hee-Myoung;Kim, Tae-Wan;Min, Hang-Gi;Jang, Kyung-Uk;Chung, Dong-Hoe;Oh, Yong-Cheul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.31-32
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    • 2007
  • Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. An ITO was used as an anode, and $Li_2O$/Al was used as a cathode. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. It was found that for 0.5nm thick $Li_2O$ layer built-in voltage is the higher than the others. It indicates that a very thin alkaline metal compound $Li_2O$ lowers an electron barrier height.

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Fabrication of carbon nanotube electron beam (C-beam) for thin film modification

  • Kang, Jung Su;Lee, Su Woong;Lee, Ha Rim;Chung, Min Tae;Park, Kyu Chang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.171.1-171.1
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    • 2015
  • Carbon nanotube emitters is very promising electron emitter for electron beam applications. We introduced the carbon nanotube electron beam (C-beam) exposure technic using triode structure. As a source, the electron beam emit from CNT emitters placed at the cathode by high electric field. Through the gate mesh, with high accelerating energy, the electron can be extracted easily and impact at the anode plate. For thin film modification, after the C-beam exposure on the amorphous silicon thin film, we found phase changes and it showed a high crystallinity from the Raman measurement. We expect that this crystallized film will be a good candidate as a new active layer of TFT.

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Fabrication of OLED using low cost transparent conductive thin films (저가격 투명전극을 이용한 OLED의 제작)

  • Lee, B.J.;Shin, P.K.;You, D.H.;Ji, S.H.;Lee, N.H.;Park, K.S.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1281-1282
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    • 2008
  • Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

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The study on the thickness change of tantalum oxide as voltage drop in electrolyte

  • Hur, Chang-Wu;Lee, Kyu-Chung
    • Journal of information and communication convergence engineering
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    • v.8 no.4
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    • pp.453-456
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    • 2010
  • Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

Microstructure and Residual Stress of Metallic Thin Films According to Deposition Parameters

  • Park, Byung-Jun;Kim, Young-Man
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.1-8
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    • 2003
  • In general, the microstructure in thin films was known to evolve in similar manner according to the energy striking the condensing film at similar homologous temperature, Th for the materials of the same crystal structure. The fundamental factors affecting particle energy are a function of processing parameters such as working pressure, bias voltage, target/sputtering gas mass ratio, cathode shape, and substrate orientation. In this study, Al, Cu, Pt films of the same crystal structure of face centered cubic (FCC) have been prepared under various processing parameters. The influence of processing variables on the microstructures and residual stress states in the films has been studied.

A Study on the Initial Performance Degradation of Hydrogen-Fueled Ceramic Fuel Cell with Atomic Layer-Deposited Thin-Film Electrolyte (수소연료를 이용하는 원자층증착 박막전해질 세라믹연료전지의 초기성능 저하에 관한 연구)

  • JI, SANGHOON
    • Transactions of the Korean hydrogen and new energy society
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    • v.32 no.5
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    • pp.410-416
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    • 2021
  • The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~17% for 40 minutes, which rapidly decreased in the early stage of the performance evaluation but gradually decreased. The open circuit voltage ratio decreased with respect time; however, its time behavior was remarkably different with the reduction behavior of the peak power density ratio. The activation resistance ratio increased as ~15% for 40 minutes, which was almost similar with the time behavior of the peak power density ratio.

Initial Performance Degradation of Hydrogen-Fueled Ceramic Fuel Cell with Plasma-Enhanced Atomic Layer-Deposited Ultra-Thin Electrolyte (플라즈마 원자층증착 초박막전해질 수소 세라믹연료전지의 초기성능 저하)

  • JI, SANGHOON
    • Transactions of the Korean hydrogen and new energy society
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    • v.32 no.5
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    • pp.340-346
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    • 2021
  • The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte fabricated by plasma-enhanced atomic layer deposition method was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~52% for 30 min, which continually decreased as time increased but degradation rate gradually decreased. The open circuit voltage ratio decreased with respect time; however, its behavior was evidently different from the reduction behavior of the peak power density. The activation resistance ratio increased as ~127% for 30 min, which was almost similar with the reduction behavior of the peak power density ratio.

Electrical Characteristics of Manufactured Multilayer Piezoelectric Transformer for driving The CCFL(Cold Cathode Fluorescent Lamp) (CCFL 구동을 위한 압전변압기 제작과 전기적 특성)

  • Han Jae Hyun;Lim Young Cheol;Yang Seung Hak;Kweon Gie Hyoun
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.777-780
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    • 2002
  • 최근 백라이트용 램프를 구동하기 위해 사용하는 승압용 변압기를 압전 변압기로 도입하는 연구가 활발히 진행되고 있다. 압전 변압기는 종래의 권선 변압기에서 볼 수 있었던 누설 자속과 권선등에 의한 저항 손실이 없으며, 전자유도에 의한 노이즈와 자체 손실이 없고, 권선형의 자기소자로 인한 소형화에 한계를 가지는 큰 단점을 해결해 주고 있다. 본 논문에서는 11층의 적층형 압전 변압기를 제작하고 이 제작된 적층형 압전 변압기의 전기적 특성분석을 통한 CCFL(Cold Cathode Fluorescent Lamp) 구동용 인버터의 승압용 변압기로써 응용가능성을 제시하였다.

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Numerical Analysis of Discharge in Wire ion Plasma Source (입자법을 이용한 와이어.이온.플라즈마원의 해석)

  • 송태헌;고광철;강형부
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.369-372
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    • 1997
  • Wire Ion Plasma Source (WIPS) is a plasma device which has a thin wire anode, a coaxially-set cylindrical cathode and electrodes located in both ends of the cylinder. The potential between the anode and cathode changes logarithmically by this electrode configuration. This electrode configuration enables high-density plasma to produce even at a low anode voltage. Since the electrode configuration is axially symmetric and long. plasma with axially uniform number density can be produced. Using particle-in-cell(PIC) and Monte Carlo collision(MCC), we investigate the traiectory of electrons and the characteristics of D.C. discharge in Wire ton Plasma Source.

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