• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국진공학회지
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• 제17권5호
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• pp.461-465
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• 2008

적층 박막 내에서의 상변화는 주변 층에 영향을 준다. 결정화가 게이트 절연층에 주는 영향이 제거된 선결정화법(precrystallization)이 금속 유도 일측면 결정화(metal-induced unilateral crystallization)에 의해 제작된 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성에 미치는 영향에 대하여 연구하였다. 이 방법으로 만들어진 소자는 일반적인 후 결정화(postcrystallization) 소자에 비하여 높은 전류 구동력을 보였다. 여기에 본 연구는 DC bias에 의한 ring oscillator의 특성 변화를 연구하였다. 선결정화된 실리콘 박막을 이용하여 제작한 PMOS inverter는 후결정화된 실리콘 박막을 이용하여 제작한 inverter에 비하여 매우 동적(dynamic)이고도 안정적인 특성을 보였다.

• 한국산업융합학회 논문집
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• 제24권4_2호
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• pp.509-515
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• 2021

In this study, a pressure vessel for a heat pipe was fabricated by bonding a metal thin film using a polymer compound sheet. In order to confirm the applicability of the experimentally manufactured copper material thin heat pipe of 0.6 mm or less, the pressure resistance and effective thermal conductivity for pressure generated according to the type of the working fluid of the heat pipe were evaluated to suggest the commercialization potential of the thin heat pipe. As a result of evaluating the pressure resistance and effective thermal conductivity performance of the thin heat pipe, the following conclusions were drawn. 1) Using a PEEK-based polymer compound sheet, it was possible to fabricate a pressure vessel for a thin heat pipe with a pressure resistance of up to 1.0 MPa by bonding a copper thin film, and the possibility of commercialization was confirmed at a temperature below 120 ℃. 2) In the case of the effective thermal conductivity performance evaluation test, the effective thermal conductivity of ethanol was higher than that of FC72 and Novec7000, and in the case of ethanol, the maximum effective thermal conductivity was 2,851 W/mK at 3.0 W of heating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.675-678
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• 2004

Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. An ozone condensation system is constructed for metal oxide thin film fabrication. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.953-959
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• 2006

Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• 전자공학회논문지D
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• 제34D권4호
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.362-365
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• 2002

This paper, experiment manufactures device of Metal/Poly-${\gamma}$ Benzyl $_D$-GlutamateOrganic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Permittivity of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• 한국레이저가공학회지
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• 제2권3호
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• pp.52-61
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• 1999

The laser induced forward transfer(LIFT) technique employs a pulsed laser to transfer parts of a thin metal film from an optically transparent target onto an arbitrary substrate in close proximity to the metal film on the target. In this work, a two-step method, the combination of LIFT process, in which a Au film deposited on the $Al_2$O$_3$ substrate by Nd:YAG laser and subsequent Au electroless metal plating on the by LIFT process generated Au seed, was presented. The influence of laser parameters, wavelength, laser power, film thickness and overlap ratio of pulse tracks, on the shapes of deposit and conductor line after electroless plating is experimentally studied. As a results, the threshold power densities for ablation, deposition and metallization were determined and comparison of threshold value between the wave length 1064nm and the second harmonic generated 532nm. In odor to determine a possible application in the electronic industry, a smallest conduct spot size, line width and isolated line space were generated.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.5-8
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• 2004

A low cost MOD processing using YBCO oxide powder as a starting precursor was employed for fabrication of YBCO thin films. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process. YBCO thin films were prepared by oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at 78$0^{\circ}C$ shows no transport $I_c$ and poor microstructure. However, the YBCO thin film annealed at higher temperature shows improvement in microstructure and current transport property. In order to improve critical current, YBCO thin film was prepared by double coating method. YBCO thin film prepared with double coating approach shows enhanced superconducting performance ($I_c$>100A/cm-w).