• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.234.2-234.2
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• 2014

Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

• Journal of Advanced Navigation Technology
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• v.17 no.5
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• pp.574-580
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• 2013

In this paper, The process of thin-film coating technology was applied to improve adhesion of the hardness thin film and nitride layer. This thin-film coating technology have formed composite thin-film to gain hardness and toughness used in press mold. The thin-film coating manufacturing technology increased vacuum present in the vacuum chamber and improved the throw ratio of the gun power using physical vapor deposition coating technology. Ti alloys target improved performance and surface material through the development of a composite film coating technology for various precision machining parts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.590-593
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• 2003

Ozone is a strong and useful oxidizing gas for the fabrication of oxide thin films. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper an ozone condensation system was evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Crone was condensed by an adsorption method and the ozone concentration reached 8.5 mol% in 2.5 h after the beginning of the ozone condensation process, indicating high effectiveness of the condensation process. Ozone was continuously desorbed from the silica gel by the negative pressure. We found the decomposition in the ozone concentration negligible if the condensed ozone is transferred from the ozone condensation system to the film growth chamber within a few minutes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.219-223
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• 2011

Rhenium-Iridium(Re-Ir) thin films were deposited onto the tungsten carbide(WC) molding core by sputtering system. The Re-Ir films were prepared by multi-target sputtering with iridium, rhenium and chromium as the sources. Argon and nitrogen were inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having atomic percent of 3:7 and the Re-Ir thin films were formed with 240 nm thickness. The Re-Ir thin films on tungsten carbide molding core were analyzed by scanning electron microscope(SEM) and surface roughness. Also, adhesion strength and coefficient friction of Re-Ir thin film were examined. The Re-Ir coating technique has been intensive efforts in the field of coating process because the coating technique and process have been their feature, like hardness, high elasticity, abrasion resistance and mechanical stability and also have been applied widely the industrial and biomedical areas. In this report, tungsten carbide(WC) molding core was manufactures using high performance precision machining and the efforts of Re-Ir coating on the surface roughness.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.