• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.98-101
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• 1991

The As2S3 thin film has a characteristics of optical modulation in both amplitude and phase. Since the As2S3 thin film can be used as a real-time reconfigurable optical filter, the fSDF filter can be optically fabricated on it. According to the modulation characteristics of the As2S3, the optimal fSDF filter recorded on this thin plate has the form of continuous amplitude and binary phase. Computer simulation and optical experiments on the optical pattern classification show that the As2S3 is suitable for the optical fSDF filter.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.653-655
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• 1997

In this paper, a monoblock dielectric filter for 900MHz band CT-1 is designed by using CAD(Computer Aided Design). Equivalent circuit for monoblock dielectric filter represented by parallel coupled stripline is simulated by using SuperCompact software tool. A Designed filter structure is simulated by using HFSS to optimize result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.979-983
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• 2012

We proposed the ZnO thin film for a SAW filter by PLD and RF sputtering method. ZnO thin films was pre-deposited on a sapphire substrate as a seed layer by PLD method and then deposited on seed layer by RF sputtering. The surface characteristics of ZnO thin film were investigated by XRD, SEM and AFM. The minimum surface roughness was 1.92 nm and FWHM of rocking curve was $0.92^{\circ}$. We demonstrated the SAW filter with bandwidth of approximately 0.97 MHz and the center frequency of 18.72 MHz using the proposed ZnO thin film.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.131.1-131.1
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.389-392
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• 1996

The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.141-144
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• 2003

This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.306-311
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• 2003

In this paper, we modeled the incident beam in order to analyze and evaluate the optical thin film device for wavelength division multiplexing in optical telecommunication network. As applied ray tracing method to the optical path, we were compared the accuracy of coupling efficiency simulated by two modeling methods. In the results of sinulation, ceil modeling method was preferred to annual modeling method in micro-optic device because of accuracy for coupling efficiency and Gaussian intensity distribution. In the results of optimal simulation for optical device using thin film filter, the distance (d1) between optical fiber and GRIN lens, the distance (d2) between GRIN lens and thin film filter and the coupling efficiency were 0.24 mm, 0.25 mm and -0.11 ㏈ respectively. As d2 was displaced at 0.25 mm and d1 was varied in order to evaluate the optimal value, d1 and maximum coupling efficiency were 0.24 mm and -0.35㏈, respectively. Then the results of experiment were corresponded to that of optimal simulation by cell modeling and it was possible to analyze the performance for optical device using thin film filter by the simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.435-443
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• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.