• Title/Summary/Keyword: thin film equation

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Evaluation of the Residual Stress of Thin Film Based on the Nanoindentation and Finite Element Analysis. (유한요소해석과 나노인덴테이션을 활용한 박막의 잔류응력 평가)

  • 황병원;김영석;박준원
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.10a
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    • pp.355-358
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    • 2003
  • To estimate the residual stresses in the thin film and surface coatings, combined method based on nanoindentation and finite element (FE) analysis was developed. A simple equation for estimating the residual stress was composed of the hardness and the parameters which can be driven from the nanoindentation loading and unloading behaviors. FE analysis on the nanoindentation procedure under the various residual stress levels was performed to determine the parameters that included in the equation. The equation showed a good coincidence between the estimated residual stresses and those for the FE analysis. Thus the proposed method was considered as a useful method for estimating the residual stresses in the thin film without stress free specimen.

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A Study on Thermal Conductivity Measurement and Optical Characteristics of Thin Films (박막의 열물성 측정 및 광학특성 연구)

  • Gwon, Hyuk-Rok;Lee, Seong-Hyuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2202-2207
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    • 2007
  • The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

Effect of Film Thickness on Gas Sensing Behavior of Thin-Film-Type Gas Sensor (박막 형 가스 센서에 있어서 가스 감지 속도에 대한 막 두께의 영향)

  • Yu, Do-Joon;Jun Tamaki;Norio Miura;Noboru Yamazoe;Park, Soon-Ja
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.716-722
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    • 1996
  • Effect of Film thickness on the sensing behavior of thin-film-type ags sensor has been analyzed by deriving an equation form a simple model, and the equation was applied to the sensing behavior of ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors. It was revealed, from the equation,that the gas sensing property was closely related to gas diffusivity into the film which was a function of film thickness, reactivity of the gas detected with sensing material, operating temperature, etc. The equation derived was well consistent with the experimental results from ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors and explained their different ${H}_{2}S$ sensing behaviors. Finally, a medel was suggested, explainning the effect of gas diffusivity on sensing be havior of oxide semiconductor sensor.

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Lubrication Effect of Journal Bearing according to its Eccentricity and Attitude Angle (베어링 편심도와 자세각에 따른 저어널 베어링의 윤활효과)

  • Kim, Jong-Do;Wang, Yi-Jun;Yoon, Moon-Chul
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.14 no.5
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    • pp.88-95
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    • 2015
  • The thickness of adsorbed molecular layers is the most critical factor in studying thin-film lubrication, and it is the most essential parameter that distinguishes thin-film from thick-film lubrication analysis. The thin film between the shaft and bearing surface within a very narrow gap was considered. The general Reynolds equation has been derived for calculating thin-film lubrication parameters affecting the performance of the circular journal bearing. Investigation of the load-carrying capacity and pressure distribution for the journal bearing considering the adsorbed layer thickness has been carried out. A Reynolds equation appropriate for the journal bearing is used in this paper for the analysis, and it is discussed using the finite difference method of the central difference scheme. The parameters, such as eccentricity and attitude angle, are used for discussing the load-carrying capacity of the journal bearing. The results reported in this paper should be applied to analysis of the journal bearing with different lubrication factors. The steady-state analysis of the journal bearing is conducted using the Reynolds model under thin-film lubrication conditions. For a journal bearing, several parameters, such as a pressure, load capacity, and pressure components of the bearing can be obtained, and these results can be stored in a sequential data file for later analysis. Finally, their distribution can be displayed and analyzed easily by using the MATLAB GUI technique. The load-carrying capability of the journal bearing is observed for the specified operating conditions. This work could be helpful for the understanding and research of the mechanism of thin-film lubrication.

Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition

  • Tuan, Do Anh
    • Journal of Electrical Engineering and Technology
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    • v.11 no.2
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    • pp.455-462
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    • 2016
  • The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10−17 V.cm2). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

Thickness Dependence of the Glass Transition Temperature in Thin Polymer Films

  • Lee, Jeong-Kyu;Zin, Wang-Cheol
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.201-201
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    • 2006
  • In this study the glass transition temperature in thin polymer films has been studied. Ellipsometry has been used to measure $T_{g}$ of thin film as a function of film thickness. Empirical equation has been proposed to fit the measured $T_{g}$ pattern with thickness. Also, a continuous multilayer model was proposed and derived to describe the effect of surface on the observed $T_{g}$ reduction in thin films, and the depth-dependent $T_{g}$ profile was obtained. These results showed that $T_{g}$ at the top surface was much lower than the bulk $T_{g}$ and gradually approached the bulk $T_{g}$ with increasing distance from the edge of the film. The model and equation were modified to apply for the polymer coated on the strongly favorable substrate and the freely standing film.

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Surface Chemical Reactions for Metal Organic Semiconductor Films by Alternative Atomic Layer Deposition and Thermal Evaporation

  • Kim, Seong Jun;Min, Pok Ki;Lim, Jong Sun;Kong, Ki-Jeong;An, Ki-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.166.2-166.2
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    • 2014
  • In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

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Modeling of Reversible and Irreversible Threshold Voltage Shift in Thin-film Transistors (박막트랜지스터의 병렬형 가역과 비가역 문턱전압 이동에 대한 모델링)

  • Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.387-393
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    • 2016
  • Threshold voltage shift has been observed from many thin-film transistors (TFTs) and the time evolution of the shift can be modeled as the stretched-exponential and -hyperbola function. These analytic models are derived from the kinetic equation for defect-creation or charge-trapping and the equation consists of only reversible reactions. In reality TFT's a shift is permanent due to an irreversible reaction and, as a result, it is reasonable to consider that both reversible and irreversible reactions exist in a TFT. In this paper the case when both reactions exist in parallel and make a combined threshold voltage shift is modeled and simulated. The results show that a combined threshold voltage shift observed from a TFT may agrees with the analytic models and, thus, the analytic models don't guarantee whether the cause of the shift is defection-creation or charge-trapping.

Modification of Thin Film Friction and Wear Models with Effective Hardness

  • Kim, Chang-Lae;Kim, Hae-Jin
    • Tribology and Lubricants
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    • v.36 no.6
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    • pp.320-323
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    • 2020
  • Thin film coatings are commonly exploited to minimize wear and optimize the frictional behavior of various precision mechanical systems. The enhancement of thin film durability is directly related to the performance maximization of the system. Therefore, a fine approach to analyze the thin film wear behavior is required. Archard's equation is a representative and well-developed law that defines the wear coefficient, which is the probability of creating wear particles. A ploughing model is a commonly used model to determine the friction force during the abrasive contact. The equations demonstrate that the friction force and wear coefficient are inversely proportional to the hardness of the material. In this study, Archard's equation and ploughing models are modified with an effective hardness to minimize the gap between the experimental and numerical results. It is noted that the effective hardness is the hardness variation with respect to the penetration depth owing to the substrate effect. The nanoindentation method is utilized to characterize the effective hardness of Cu film. The wear coefficient value considering the effective hardness is more than three times higher than that without considering the effective hardness. The friction force predicted with the effective hardness agreed better with the results obtained directly from the friction force detecting sensor. This outcome is expected to improve the accuracy of friction and wear amount predictions.

The Flow of a Liquid Film on Spin Coating (스핀 코팅에서의 액막의 흐름)

  • Kim, Tae-sung
    • Journal of ILASS-Korea
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    • v.18 no.3
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    • pp.146-154
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    • 2013
  • The flow of a liquid film on spin coating is investigated in the case that the fixed volume of a liquid is placed on the center of a stationary disk. Thin film equations that are well approximated when the characteristic length in the vertical direction is much smaller than that in the radial direction (${\varepsilon}{\ll}1$) and have already been proposed in the work of T.-S. Kim & M.-U. Kim (2009), are used. The differential equation that governs the free surface of a liquid when ${\varepsilon}{\ll}1$ and ${\varepsilon}Re{\ll}1$ is also derived. The basic flow is analyzed using the thin film equations and their results are compared to the results of Navier-Stokes equations.