• 한국재료학회지
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• 제27권11호
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.998-1000
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• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Structural Engineering and Mechanics
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• 제57권3호
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• pp.389-402
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• 2016

Based on the traditional mechanical model of thin-walled straight beam, the paper makes analysis and research on the pre-twisted thin-walled beam finite element numerical model. Firstly, based on the geometric deformation differential relationship, the Saint-Venant warping strain of pre-twisted thin-walled beam is deduced. According to the traditional thin-walled straight beam finite element mechanical model, the finite element stiffness matrix considering the Saint-Venant warping deformations is established. At the same time, the paper establishes the element stiffness matrix of the pre-twisted thin-walled beam based on the classic Vlasov Theory. Finally, by calculating the pre-twisted beam with elliptical section and I cross section and contrasting three-dimensional solid finite element using ANSYS, the comparison analysis results show that pre-twisted thin-walled beam element stiffness matrix has good accuracy.

• 센서학회지
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• 제16권3호
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.185-185
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• 2006

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.720-723
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• 2008

RUPI 기반 로봇 서비스는 다양한 성능을 지원하는 로봇과 서버간의 연동을 통해서 융통성과 확장성을 보장하는 로봇 기반 서비스를 제공한다. 높은 H/W 성능과 계산 능력을 보장하는 Rich-Client 로봇과 달리 Thin-Client 로봇은 제한된 성능만을 제공하기 때문에, 상대적으로 높은 연산량을 요구하는 보안 알고리즘을 수행하기에는 어려움이 있다. 따라서 본 논문에서는 Thin-Client 로봇의 보안 위협과 요구사항, 및 보안 기능을 포함하는 Thin-Client 로봇 보안 프레임워크를 제안한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1997년도 춘계학술대회논문집; 경주코오롱호텔; 22-23 May 1997
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• pp.701-708
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• 1997

A direct boundary element method(DBEM) is developed for thin bodies whose surfaces are rigid or compliant. Th eHelmholtz integral equation and its normal derivative integral equation are adopted simultaneously to calculate the pressure on both sides of the thin body, instead of the jump values across it, to account for the different surface conditions of each side. Unlike the usual assumption, the normal velocity is assumed to be discontinuous across the thin body. In this approach, only the neutral surface of the thin body has to be discontinuous across the thin body. In this approach, only the neural surface of the thin body has to be discretized. The method is validated by comparison with analytic and/or numerical results for acoustic scattering and radiation from several surface conditions of the thin body; the surfaces are rigid when stationary or vibrating, and part of the interior surface is lined with a sound-absorbing material.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.