• Title/Summary/Keyword: thermo sensor

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Thermoelectric properties of $(Bi,;Sb)_2;(Te,;Se)_3$-based thin films and their applicability to temperature sensors ($(Bi,;Sb)_2;(Te,;Se)_3$계 박막의 열전 특성 및 온도 센서로의 응용)

  • 한승욱;김일호;이동희
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.69-76
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    • 1997
  • P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

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The Response Characteristics of as Addition Ratio of Arsenic in $CaWO_4/a-Se$ based X-ray Conversion Sensor ($CaWO_4/a-Se$ 구조의 X선 변환센서에서 a-Se의 Arsenic 첨가량에 따른 반응 특성)

  • Kang, Sang-Sik;Suk, Dae-Woo;Cho, Sung-Ho;Kim, Jae-Hyung;Nam, Namg-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.416-419
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    • 2002
  • There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

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Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors (고감도 적외선 이미지 센서 적용을 위한 금속-유전체 복합 박막의 광전자 특성)

  • Kim, Ye-Na;Kwon, Soon-Woo;Park, Seung-Jun;Kim, Woo-Kyug;Lee, Han-Young;Yoon, Dae-Ho;Yang, Woo-Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.2
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    • pp.60-64
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    • 2011
  • High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

The Study on Characteristic Composition of As in a-Se with X-ray Detection Sensor using $CaWO_4/a-Se$ (다층구조($CaWO_4/a-Se$) 기반의 X선 검출센서에서 a-Se에 첨가된 As의 특성비 연구)

  • Choe, Jang-Yong;Lee, Dong-Gil;Sin, Jeong-Uk;Kim, Jae-Hyeong;Nam, Sang-Hee;Park, Ji-Koon;Kang, Sang-Sik;Jang, Gi-Won;Lee, Hung-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.432-435
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    • 2002
  • The ultimate study of this research is to improve the properties of digital X-ray receptor based on amorphous selenium. There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. But each two systems have strength and weakness. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. ln this study, we investigated the electrical characteristic of multi-layer$(CaWO_4+a-Se)$ as a photoconductor according to the changing iodine composition ratio. The iodine composition ratio of a-Se compound is classified into 5 different kinds which have 30ppm, 100ppm, 300ppm, 500ppm, 700ppm and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 700ppm iodine showed good characteristic of $2.53nA/cm^2$ dark current and $479nC/cm^2{\cdot}mR$ net charge at $3V/{\mu}m$.

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Advanced LWIR Thermal Imaging Sight Design (원적외선 2세대 열상조준경의 설계)

  • Hong, Seok-Min;Kim, Hyun-Sook;Park, Yong-Chan
    • Korean Journal of Optics and Photonics
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    • v.16 no.3
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    • pp.209-216
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    • 2005
  • A new second generation advanced thermal imager, which can be used for battle tank sight has been developed by ADD. This system uses a $480\times6$ TDI HgCdTe detector, operating in the $7.7-10.3{\mu}m$ wavelength made by Sofradir. The IR optics has dual field of views such as $2.67\times2^{\circ}$ in NFOV and $10\times7.5^{\circ}$ in WFOV. And also, this optics is used for athermalization of the system. It is certain that our sensor can be used in wide temperature range without any degradation of the system performance. The scanning system to be able to display 470,000 pixels is developed so that the pixel number is greatly increased comparing with the first generation thermal imaging system. In order to correct non-uniformity of detector arrays, the two point correction method has been developed by using the thermo electric cooler. Additionally, to enhance the image of low contrast and improve the detection capability, we have proposed the new technique of histogram processing being suitable for the characteristics of contrast distribution of thermal imagery. Through these image processing techniques, we obtained the highest quality thermal image. The MRTD of the LWIR thermal sight shows good results below 0.05K at spatial frequency 2 cycles/mrad at the narrow field of view.