• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.561-566
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• 2014

The high power COB(Chip on Board) LED, densely arranged chips on a board, are increasing to resolve heat problems in LED that has luminous semiconductor chips as main materials. In case of high-power COB LED, protection against heat is necessary due to the power consumption is high. Also if the temperature of device increases, the optical emission becomes less efficient and the life rapidly reduces due to thermal stress. This study packaged 13.5W COB LED and heat sink with difference form and produced 13.5W COB LED down-light heat sink by analyzing the thermal modes with Solidworks Flow Simulation. And finally it analyzed and evaluated the thermal modes using contacting and non-contacting thermometers.

• Journal of the Korean Institute of Gas
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• v.17 no.2
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• pp.1-8
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• 2013

In this study, 120 cases of damage due to ground subsidence of city gas pipeline which is hanging on apartment outer wall were investigated. From the survey results, it was determined to be approximately 100m~200mm ground subsidence occurred and at severe damage, pipeline was cut and the gap was about 50mm between two cut pipeline. Device for measuring the amount of deformation of standing gas pipeline was designed and fabricated. And installed it on apartment outer wall for measuring the deformation due to ground subsidence, after 5 months measurement the amount of ground subsidence was measured to 1.3mm. Stress assessment was conducted based on results of ground subsidence occurred on standing gas pipeline.

• Journal of the Korean Society of Safety
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• v.27 no.4
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• pp.7-12
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• 2012

In this study, the solidification characteristics inside the AC7A casting material was analyzed using the numerical analysis method and was verified using the experimental method by the pre-heated temperature conditions of metal casting device. For the numerical analysis, "COMSOL Multiphysics", the commercial code based on the finite element analysis(FEA), was used in order to predict the thermal deformation of the AC7A casting material including temperature, displacement and stress distribution. Also, in order to verify the results calculated by the numerical analysis, the experiment for temperature measurement inside the AC7A casting material was performed using the K-type thermocouple under the same condition of numerical analysis method. In the numerical results, thermal deformation inside AC7A casting material was well-suited for manufacturing products when the pre-heated temperatures of the metal casting device was $250^{\circ}C$. When the results of the temperature distribution were experimentally measured and were compared with those of the numerical result, it appeared that there was some temperature difference because of the latent heat by phase change heat transfer. However, the result of cooling temperature and patterns were almost similar except for the latent heat interval. The solidification characteristics was closely related to the temperature difference between the surface and inside of the casting.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.622-622
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• 2013

Piezoelectric energy harvesting (PEH) device refers to a power device for acquiring mechanical energy from the environment surrounding us which would otherwise be wasted and for converting it into usable electrical energy. While much work has been done on developing ZnO nanogenerator (NG) with nanowire arrays, there are some issues of not only scaling up its output power but also optimizing structure for operating feasibly in various conditions. Efficiency of NG is highly dependent on fixed orientation. But in many cases, it is not easy to predict where the pressure and vibration may come from. Furthermore, the direction of the applied mechanical stress is usually non-stationary and can be random in various practical applications. Therefore an omnidirectional PEH is needed.In this work, we investigate an omnidirectional PEH device consisting ZnO nanowires. We deposited spiral patterned ZnO seed layer on Kapton film. We deposited thin Cr layer on the ZnO seed layer using DC-sputter to form a passivation layer to retard un-expected growth of ZnO nanowires. We grew ZnO nanowires along the spiral arms using hydrothermal method. ZnO nanowires have been selectively grown from the ZnO sidewall without Cr layer and have the average length of$5{\mu}m$ and the average diameter of 40nm. We reduced the defect in the as-grown ZnO nanowires by O2 plasma using asher and by thermal treatment using RTA. Consequently, each nanowire has different directions to each other. This isotropic design can lead to the omnidirectional power generation. The morphology of NG is characterized with FESEM. Maximum output power of the device is measured by using a picoammeter and a nanovoltmeter.

• Journal of the Korea Society for Simulation
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• v.22 no.4
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• pp.93-98
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• 2013

In this paper, the proposed shallow trench isolation structures for high threshold voltage for very large scale and ultra high voltage integrated circuits MOSFET were simulated. Physically based models of hot-carrier stress and dielectric enhanced field of thermal damage have been incorporated into a TCAD tool with the aim of investigating the electrical degradation in integrated devices over an extended range of stress biases and ambient temperatures. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.

• Journal of Sensor Science and Technology
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• v.25 no.2
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• pp.116-123
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• 2016

This paper presents the fabrication and evaluation of the novel drag force type air flowmeter using MEMS technologies for the vehicle applications. To obtain the air drag force, the flowmeter utilized the curved beam structure, which was realized by the difference of residual stress between the silicon oxide layer and the silicon nitride layer. The paddle structure was applied for the maximum air drag force, and the dual-beam was adapted to prevent distortion. The basic experiments were performed in the wind tunnel, and the stable outputs were obtained. The device was applied to the internal combustion engine, and the results were compared with the HI-DS output where the convection thermal flowmeter was used as the reference sensor. The results indicated that the comparable resolutions and response times were obtained under the various engine speeds.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.454-459
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• 2013

For the purpose of rapid development and superior design quality assurance, sophisticated finite element model for SOM(Spatial Optical Modulator) piezo actuator of MOEMS device has been developed and evaluated for the accuracy of dynamics and residual stress analysis. Parametric finite element model is constructed using ANSYS APDL language to increase the design and analysis performance. Geometric dimensions, mechanical material properties for each thin film layer are input parameters of FE model and residual stresses in all thin film layers are simulated by thermal expansion method with psedu process temperature. $6^{th}$ mask design samples are manufactured and $1^{st}$ natural frequency and 10V PZT driving displacement are measured with LDV. The results of experiment are compared with those of the simulation and validate the good agreement in $1^{st}$ natural frequency within 5% error. But large error over 30% occurred in 10V PZT driving displacement because of insufficient PZT constant $d_{31}$ measurement technology.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.3
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• pp.31-37
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• 1998

The structure of satellite consists of six parts which are control system, power system, thermal control system, remote measurement command system, propellant system and thrust system. In these parts, propellant system consists of propellant tank and thrust device. What we want to perform is optimum design to minimize the weight of propellant tank. In order to design optimal propellant tank, several parameters should be adopted from the tank geometry like the relative location of the lug and variation of the wall thickness. The analysis was executed by finite element analysis for finding optimal design parameters. The structure was divided into three parts consisting of the initial thickness zone, the transitional Bone, and the weak zone, whose effects on the pressure vessel strength was investigated. Finally the optimal lug location and the three zone thickness were obtained and the weight was compared with the uniform thickness vessel.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.