• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1047-1050
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• 2009

The two approaches to improve the stability of oxide TFTs are described. First approach is the optimization of device architecture including MIS structure and passivation layer using conventional InGaZnO semiconductor channel layer. Second approach is to develop the new kinds of oxide semiconductor materials, which is very robust and stable against the gate bias stress and thermal stress.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.326-329
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• 2009

We investigated the degradation of $In_2O_3-Ga_2O_3$-ZnO (IGZO) thin-film transistors (TFTs), which is promising device for driving circuits of nextgeneration displays. We performed the electronic stress test by applying gate and drain voltage. We discussed the degradation mechanism by thermal analysis and device simulation.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1537-1540
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• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.183-190
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• 2003

Major device failures such as die cracking, interfacial delamination and warpage in flip chip packages are due to excessive heat and thermal gradients- There have been significant researches toward understanding the thermal performance of electronic packages, but the majority of these studies do not take into account the combined effects of thermo-mechanical interactions of the different package constituents. This paper investigates the thermo-mechanical performance of flip chip package constituents based on the finite element method with thermo-mechanically coupled elements. Delaminations with different lengths between the silicon die and underfill resin interfaces were introduced to simulate the defects induced during the assembly processes. The temperature gradient fields and the corresponding stress distributions were analyzed and the results were compared with isothermal case. Parametric studies have been conducted with varying thermal conductivities of the package components, substrate board configurations. Compared with the uniform temperature distribution model, the model considering the temperature gradients provided more accurate stress profiles in the solder interconnections and underfill fillet. The packages with prescribed delaminations resulted in significant changes in stress in the solder. From the parametric study, the coefficients of thermal expansion and the package configurations played significant roles in determining the stress level over the entire package, although they showed little influence on stresses profile within the individual components. These observations have been implemented to the multi-board layer chip scale packages (CSP), and its results are discussed.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2001.05a
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• pp.126-129
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• 2001

LIPCA (LIghtweight Piezo-composite Curved Actuator) is an actuator device which is lighter than other conventional piezoelectric ceramic type actuator. LIPCA is composed of a piezoelectric ceramic layer and fiber reinforced light composite layers, typically a PZT ceramic layer is sandwiched by a top fiber layer with low CTE (coefficient of thermal expansion) and base layers with high CTE. LIPCA has curved shape like a typical THUNDER (thin-layer composite unimorph feroelectric driver and sensor), but it is lighter an than THUNDER. Since the curved shape of LIPCA is from the thermal deformation during the manufacturing process of unsymmetrically laminated lay-up structure, an analysis for the thermal deformation and residual stresses induced during the manufacturing process is very important for an optimal design to increase the performance of LIPCA. To investigate the thermal deformation behavior and the induced residual stresses of LIPCA at room temperature, the curvatures of LIPCA were measured and compared with those predicted from the analysis using the classical lamination theory. A methodology is being studied to find an optimal stacking sequence and geometry of LIPCA to have larger specific actuating displacement and higher force. The residual stresses induced during the cooling process of the piezo-composite actuators have been calculated. A lay-up geometry for the PZT ceramic layer to have compression stress in the geometrical principal direction has been designed.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.30-33
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• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1026-1029
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• 2008

Temperature increase during OLED operation can significantly degrade the device lifetime. By using top-emission OLEDs fabricated on glass and silicon substrates that have different thermal conductivities, we found that efficient heat dissipation and corresponding lifetime improvement can be obtained by making a direct contact between the OLED anode and the high thermally-conductive silicon substrate. We describe substrate-dependent OLED heat dissipation behavior and OLED lifetime improvement by using infrared camera images and constant current stress test methods.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.57-63
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• 2008

In this paper, the dependence of MOSFET performance on the channel stress is characterized in depth. The tensile and compressive stresses are applied to CMOSFET using a nitride film which is used for the contact etch stop layer (CESL). Drain current of NMOS and PMOS is increased by inducing tensile and compressive stress, respectively, due to the increased mobility as well known. In case of NMOS with tensile stress, both decrease of the back scattering ratio ($\tau_{sat}$) and increase of the thermal injection velocity ($V_{inj}$) contribute the increase of mobility. It is also shown that the decrease of the $\tau_{sat}$ is due to the decrease of the mean free path ($\lambda_O$). On the other hand, the mobility improvement of PMOS with compressive stress is analyzed to be only due to the so increased $V_{inj}$ because the back scattering ratio is increased by the compressive stress. Therefore it was confirmed that the device performance has a strong dependency on the channel back scattering of the inversion layer and thermal injection velocity at the source side and NMOS and PMOS have different dependency on them.

• Journal of Applied Reliability
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• v.15 no.2
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• pp.124-130
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• 2015

A stress-strength analysis is used to assess the reliability of a multi-pulse rocket motor system. Main stress is found to be thermal during explosion and the distribution is obtained by simulation. The strength distribution is derived from the results of actual specimen tests. The failure rate of barrier type pulse separation device is estimated.