• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.24.1-24.1
• /
• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.353-359
• /
• 1992

Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.458-458
• /
• 2013

We investigated a study on the thermal degradation of boron doped zinc-oxide (BZO) layer which used as a transparent conducting layer on the Cu (In1-xGax) Se2 (CIGS) based thin film solar cells. Devices were annealed under the temperature of $100^{\circ}C$ or 100 hours and then Hall measurement was carried out to characterize the parameters of mobility (${\mu}Hall$), resistivity (${\rho}$), conductivity (${\sigma}$) and sheet resistance (Rsh). The initial values of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh were $29.3cm^2$/$V{\cdot}s$, $2.1{\times}10^{-3}{\Omega}{\cdot}cm$, $476.4{\Omega}^{-1}{\cdot}cm^{-1}$ and $19.1{\Omega}$/${\Box}$ respectively. After the annealing process, the values were $4.5cm^2$/$V{\cdot}s$, $12.8{\times}10^{-3}{\Omega}{\cdot}cm$, $77.9{\Omega}^{-1}{\cdot}cm^{-1}$ and $116.6{\Omega}$/${\Box}$ respectively. We observed that ${\mu}Hall$ and ${\sigma}$ were decreased, and ${\rho}$ and Rsh were increased. In this study, BZO layer plays an important role of conducting path for electrons generated by incident light onthe CIGS absorption layer. Therefore, the degradation of BZO layer characterized by the parameters of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh, affect to the cell efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.18-20
• /
• 2010

The mechanism for suppression of Ag agglomeration in Ag-Mg alloy ohmic contact to p-GaN is investigated. The Ag-Mg alloy ohmic contact shows low contact resistivity of $6.3\;{\times}\;10^{-5}\;{\Omega}cm^2$, high reflectance of 85.5% at 460 nm wavelength after annealing at $400^{\circ}C$ and better thermal stability than Ag contact The formation of Ga vacancies increase the net hole concentration, lowering the contact resistivity. Moreover, the oxidation of Mg atoms in Ag film increase the work function of Ag-Mg alloy contact and prevents Ag oxidation. The inhibition of oxygen diffusion by Mg oxide suppresses the Ag agglomeration, leading to enhance light reflectance and thermal stability.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.335-335
• /
• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.11-11
• /
• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Polymer(Korea)
• /
• v.39 no.1
• /
• pp.88-98
• /
• 2015

4-Amino-N-hexadecylbenzamide-graphene sheets (AHB-GSs), used in the preparation of the polyimide (PI) nanocomposite films, were synthesized by mixing a dispersion of graphite oxide with a solution of the ammonium salt of AHB. The atomic force microscope image of functionalized-GS on mica and a profile plot revealed the average thickness of AHB-GS to be ~3.21 nm. PI films were synthesized by reacting 4,4'-biphthalic anhydride and bis(4-aminophenyl) sulfide. PI nanocomposite films containing various contents of AHB-GS over the range of 0-10 wt% were synthesized using the solution intercalation method. The PI nanocomposite films under different thermal imidization temperatures, 250 and $350^{\circ}C$, were examined. The graphenes, for the most part, were well dispersed in the polymer matrix despite some agglomeration. However, micrometer-scale particles were not detected. The average thickness of the particles was <10 nm, as revealed from the transmission electron microscope images. Only a small amount of AHB-GS was required to improve the gas barrier, and electrical conductivity. In contrast, the glass transition and initial decomposition temperatures of the PI hybrid films continued to decrease with increasing content of AHB-GS up to 10 wt%. In general, the properties of the PI hybrid films heat treated at $350^{\circ}C$ were better than those of films heat treated at $250^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.202-208
• /
• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Korean Journal of Materials Research
• /
• v.5 no.1
• /
• pp.42-54
• /
• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.

• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.115-123
• /
• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.