• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.359-362
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• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• Journal of Environmental Science International
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• v.14 no.8
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• pp.801-810
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• 2005

The phosphor and ITO(Indium Tin Oxide) films for video phone tube (VPT) were simply prepared by the screen printing and thermal transfer methods. The increasing order of thermal firing of acrylic binder for phosphor and ITO was M6003 < M6664 < A/A 1919 < M500l < M670 1 and all mass of binders were perfectly decomposed at lower temperature than $400^{\circ}C.$ After thermal firing of phosphor paste, the residual of binder on the surface of phosphor could not be found by SEM. Aerosil as thickner provides the thixotropy property for phosphor paste but decrease the brightness of phosphor screen as residual after thermal firing. Since the thixotropy of M5001 binder without aerosil was shown and the storage modulus of phosphor paste by increasing the angular frequency was not nearly changed and the decrease of the storage modulus of phosphor paste by increasing the strain was remarkably shown. It was possible to prepare the phosphor paste which was predominant in the plate separation and the reproduction of pattern after the screen printing. Since the addition of dispersing agent to improve the printing process decreases the electrical conductivity and light transmission of ITa film, it could be found to be necessary the development of binder for phosphor paste that decreases the amount of dispersing agent possibly and does not use the aerosil as additive.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• Journal of Powder Materials
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• v.30 no.1
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• pp.53-64
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• 2023

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.205-211
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• 2012

We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.52-59
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• 1989

The reliability of the thin thermal oxide was investigated by using constant current stress method. Polysilicon gate MOS capacitors with oxide thickness range of 20-25nm were used in this experiment. Automatic measurement and statistical data analysis which were essential in reliability evaluation of VLSI process preformed by HP 9000 computer. Based on TDDB results, defect density, breakdown charge (Qbd) and lifetime of oxide film were evaluated. According to the polarity of the stress, some different characteristics were shown. Defect density was 62/$cm^2$ at negative gate injection. The value of Qbd was about 30C/$cm^2$ at positive gate injection, and about 21C/$cm^2$ at negative. The current density acceleration factor was 1.43$cm^2$/A for negative gate injection, and 1.25$cm^2$/A for positive gate injection.