• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.542-545
• /
• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권1호
• /
• pp.53-60
• /
• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• 공업화학
• /
• 제9권7호
• /
• pp.990-997
• /
• 1998

ECR 산소플라즈마를 이용하여 저온 확산법에 의해 서로 다른 종류의 기판에 마이크로파 출력, 기판의 위치 등을 실험변수로 실리콘 산화막을 제조하고, 열처리 전 후 물리 화학적 특성을 분석하여 Si/O 의 조성비, 산화막 표면의 morphology와 전기적 특성과의 관계를 살펴보았다. 마이크로파 출력이 높은 영역에서, 산화속도는 증가하지만 식각으로 인하여 표면조도가 증가하였다. 따라서 막내에 결함이 증가하고 기판자체에 걸리는 DC bias의 증가로 기상에 존재하는 산소 양이온이 다량 함유되어 산화막의 질이 저하되었다. 기판의 종류에 따라 기상에 존재하는 산소 양이온의 함량은 Si(100) $Si/SiO_2$계면에 존재하는 결함들은 줄일 수 있으나, 고정전하와 계면포획전하 밀도는 열처리와 무관하고 단지 기상에 존재하는 반응성 산소이온의 양과 기판자체 DS bias에 의존하였다. 마이크로파 출력이 300, 400 W인 실험조건에서 표면조도가 낮고, 계면결함밀도가 ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$로 $Si/SiO_2$계면에서 결함이 적은 양질의 산화막이 얻어졌다.

• Corrosion Science and Technology
• /
• 제21권4호
• /
• pp.290-299
• /
• 2022

Anodizing is an electrochemical surface treatment method conferring corrosion resistance and durability by forming a thick anodization film on the metal surface. Aluminum has a long service life and high thermal conductivity and formability, as well as excellent corrosion resistance. Aluminum 3003 alloy has improved formability, strength, and corrosion resistance due to the addition of a small amount of manganese. However, corrosion occurs in seawater and environments polluted with corrosion-inducing substances, which reduce corrosion resistance. Therefore, it is necessary to artificially form a thick anodized film to improve corrosion resistance. In this study, the anodization treatment time was 4 minutes, and voltages of 10 V, 20 V, 30 V, 40 V, 50 V, 60 V, 70 V, 80 V, 90 V, and 100 V were applied. The thickness and pore size of the oxide film increased according to the applied voltage. A barrier film was formed under voltage conditions from 10 V to 50 V, and a porous film was formed under voltage conditions from 60 V to 100 V. After anodizing, coating was applied. Wettability and corrosion resistance were observed before and after coating according to the surface shape and thickness of the oxide film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.562-562
• /
• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
• /
• pp.133-137
• /
• 2011

Low-e glazing is classified as soft low-e glazing and hard low-e glazing. Hard low-e glazing can be temperable and its handling is comfortable because its coating film is a oxide film generated at high temperatures. But there is a fatal weakness that its insulation performance and shielding performance are lower compared to soft low-e glazing by low electrical conductivity of coating film. Soft low-e glazing is excellent because its coating film consists of Ag that is excellent electrical conductivity and it has strength that can supply various product consumers want. But soft low-e glazing has weaknesses that temperable and handling are difficult because Ag is oxidized easily. Therefore this study analyzes thermal performance of glazing by changing filling gas according to applying low-e glazing through simulation to judge performance before making sample. After this process, a comparative experimental study was done through TVS by making temperable low-e glazing.

• 한국전기전자재료학회논문지
• /
• 제23권4호
• /
• pp.280-286
• /
• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

• 한국태양에너지학회 논문집
• /
• 제32권4호
• /
• pp.43-50
• /
• 2012

Metal-metal oxide (M-M oxide) cermet solar selective coatings with a double cermet layer film structure were deposited on the Al-deposited glass substrate by using a directed current (DC) magnetron sputtering technology. M oxide (CrO and ZrO) was used as the ceramic component in the cermets, and Cr and Zr used as the metallic components. In addition, black Cr (Cr-$Cr_2O_3$ cermet) solar selective coatings were deposited on the Ni-plated Cu substrate by using a electroplating method for comparison. The thermal stability tests were carried out for performance evaluation of solar coatings. Reflectance measurements were used to evaluate both solar absorptance(${\alpha}$) and thermal emittance (${\epsilon}$) of the solar coatings before and after thermal testing by using a spectrometer. Optical properties of optimized cermet solar coatings were ${\alpha}{\simeq}0.94-0.96$ and ${\epsilon}{\simeq}0.1$ ($100^{\circ}C$). The results of thermal stability test of M-M oxide solar coatings showed that the Cr-CrO cermet solar selective coatings were more stable than the Zr-ZrO cermet selective coatings at temperature of both $400^{\circ}C$ in air and $450^{\circ}C$ in vacuum. The black Cr solar selective coatings were degraded in air at temperature of $400^{\circ}C$. The main optical degradation modes of these coatings were diffusion of metal atoms, and oxidation.

• 한국표면공학회지
• /
• 제57권1호
• /
• pp.8-13
• /
• 2024

Anodizing of Al6061 alloy was conducted in two different electrolytes of 20% sulfuric acid and 8% sulfuric acid + 3 % oxalic acid solutions at a constant current or decreasing current density conditions, and its dielectric breakdown voltage was measured. The surface morphology of anodic oxide films was observed by TEM and thermal treatment was carried out at 400 ℃ for 2 h to evaluate the resistance of the anodic oxide films to crack initiation. The anodic oxide film formed in 8% sulfuric acid + 3 % oxalic acid solution showed higher dielectric breakdown voltage and better resistance to crack initiation at 400 ℃ than that formed in 20% sulfuric acid solution. The dielectric breakdown voltage increased 6 ~12% by applying decreasing current density comparing with a constant current density.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.16.1-16.1
• /
• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.