• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.265-272
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• 2002

$CaCO_{3}$ absorbed sodium lauryl sulfate (SLS) surfactant was prepared, Core-shell polymers of inorganic/organic pair, which have both core and shell component, were synthesized by sequential emulsion polymerization using styrene(St) as a shell monomer and potasium persulfate (KPS) as an initiator, We found that when $CaCO_{3}$; core prepared by adding 2,0 wt% SLS, $CaCO_{3}$ core/PSt shell polymerization was carried out on the surface of $CaCO_{3}$ particle without forming the new PSt particle during St shell polymerization in the inorganic/organic core-shell polymer preparation, The structure of core-shell polymer were investigated by measuring the degree of decomposition of $CaCO_{3}$ using HCl solution, thermal decomposition of polymer composite using thermogravimetric analyzer and morphology by scanning electron microscope.

• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.71-76
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• 1997

A lot of experiments and analyses have been done to determine the aging mechanism of mica-epoxy composite material used for large generator stator windings in order to estimate remaining life of the generator for last decades. After degrading artificially the mica-epoxy composite material, the surface analysis is performed to analyze breakdown mechanism of insulation in air and hydrogen atmosphere; i) In the case of air atmosphere, it is observed that an aging propagation from conductor to core by partial discharge effect and the formation of cracks between layers is widely carbonized surface. ii) In case of hydrogen atmosphere, the partial discharge effect is reduced by the hydrogen pressure (4kg/$\textrm{cm}^2$). Potassium ions forming a sheet of mica is replaced by hydrogen ions, which can lead to microcracks. It is confirmed that the sizes of crack by SEM analysis are 10∼20[$\mu\textrm{m}$] in length under air, and 1∼5[$\mu\textrm{m}$] in diameter, 10∼50[$\mu\textrm{m}$] in length under hydrogen atmosphere respectively. The breakdown mechanism of sttor winding insulation materials which are composed of mica-epoxy is analyzed by the component of materials with EDS, SEM techniques. We concluded that the postassium ions of mica components are replaced by H\ulcorner, H$_3$O\ulcorner at boundary area of mica-epoxy and/or mica-mica. It is proposed that through these phenomena, the conductive layers of potassium enable creation of voids and cracks due to thermal, mechanical, electrical and environmental stresses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Textile Coloration and Finishing
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• v.34 no.3
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• pp.197-206
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• 2022

The purpose of this study was to confirm the optimal spinning conditions for PLA (Polylactic acid) as a fiber forming polymer. According to the melt spinning test results of PLA, the optimal spinning temperature was 258℃. However, it needs to note that relatively high pack pressure was required for spinning at 258℃. At an elevated temperature, 262℃, mono filament was broken easily due to hydrolysis of PLA at a higher temperature. In case of fiber strength, it was confirmed that the draw ratios of 2.7 to 3.3 were optimal for maximum strength of melt spun PLA. Above the draw ratio, 3.3, the strength of the PLA fibers was lowered. It was presumed that cleavage of the PLA polymer chain over maximum elongation. The heat setting temperature of GR (Godet roller) showed that the maximum strength of the PLA fibers was revealed around 100℃. The degree of crystallinity and the strength of the PLA fibers were decreased above 100℃. The optimal take-up speed (Spinning speed) was around 4,000m/min. Thermal analysis of PLA showed 170℃ and 57℃ as Tm (melting temperature) and Tg (glass transition temperature), respectively.

• Economic and Environmental Geology
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• v.40 no.4
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• pp.473-490
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• 2007

Strata of the Kachi-1 well, Kunsan Basin, offshore western Korea, were analyzed by using integrated stratigraphy approach. As a result, five distinct unconformity-bounded units are recognized in the well: Triassic, Late Jurassic-Early Cretaceous, Early Cretaceous, Late Cretaceous, and Middle Miocene units. Each unit represents a tectono-stratigraphic unit that provides time-sliced information on basin-forming tectonics, sedimentation, and basin-modifying tectonics of the Kunsan Basin. In the late Late Jurassic, development of second- or third-order wrench faults along the Tan-Lu fault system probably initiated a series of small-scale strike-slip extensional basins. Continued sinistral movement of these wrench faults until the Late Cretaceous caused a mega-shear in the basin, forming a large-scale pull-apart basin. However, in the Early Tertiary, the Indian Plate began to collide with the Eurasian Plate, forming a mega-suture zone. This orogenic event, namely the Himalayan Orogeny, continued by late Eocene and was probably responsible for initiation of right-lateral motion of the Tan-Lu fault system. The right-lateral strike-slip movement of the Tan-Lu fault caused the tectonic inversion of the Kunsan Basin. Thus, the late Eocene to Oligocene was the main period of severe tectonic modification of the basin. After the Oligocene, the Kunsan Basin has maintained thermal subsidence up to the present with short periods of marine transgressions extending into the land part of the present basin.

• Journal of the Korean Graphic Arts Communication Society
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• v.28 no.1
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• pp.15-24
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• 2010

Photovoltaic solar cells are all in the incident because they are not converted into electrical energy, high-efficiency solar cells in order to reduce the loss of elements must be. Significant factor in the loss of solar cells, optical loss and electrical loss can be divided into. Optical losses occur when the sun will be joined on the surface of the reflection, the shadow loss due to electrodes, and the losses are in the solar wavelengths. Commercialization is currently the most common solar cells on the front of the light incident on the electrode is formed. Therefore, the shadow caused by the electrode to cover the dead area of the sun, due to factors that hinder the absorption of sunlight which is shadowing them and conversion efficiency of solar cells is the inhibition factor. These barriers to eliminate the electrode linewidth reduces the shadowing to reduce, but simply of the electrode line width is reduced electrode area by reducing the series resistance elevates this because to improve the electrode Aspect ratio(height/width) to increase Ag development of paste is required. In this study, aspect ratio of screen-printing method to increase the electrode Ag paste composition of the binder for the characterization of rheology in the shadow of the electrode by reducing the optical loss of the photoelectric conversion efficiency of solar cells to boost the performance measures was. Properties and printability of the paste, the binder resin sintered characteristics that affect the thermal properties are excellent with a good screen printability acrylic resin, ethyl cellulose, using a resin were evaluated. Prepared paste rheology properties, was formed to evaluate the electrode conductivity and aspect ratio.

• 한국지구물리탐사학회:학술대회논문집
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• 2009.05a
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• pp.57-65
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• 2009

Selection of good mineralized area is a combination of the integration of all the available geo-scientific (i.e., geological, geochemical, and geophysical) information, extrapolation of likely features from known mineralized terrenes and the ability to be predictive. The time-space relationships of the hydrothermal deposits in the East Asia are closely related to the changing plate motions. Also, two distinctive hydrothermal systems during Mesozoic occurred in Korea: the Jurassic/Early Cretaceous deep-level ones during the Daebo orogeny and the Late Cretaceous/Tertiary shallow geothermal ones during the Bulguksa event. Both the Mesozoic geothermal system and the mineralization document a close spatial and temporal relationship with syn- to post-tectonic magmatism. The Jurassic mineral deposits were formed at the relatively high temperature and deep-crustal level from the mineralizing fluids characterized by the relatively homogeneous and similar ranges of ${\delta}^{18}O$ values, suggesting that ore-forming fluids were principally derived from spatially associated Jurassic granitoid and related pegmatite. Most of the Jurassic auriferous deposits (ca. 165-145 Ma) show fluid characteristics typical of an orogenic-type gold deposits, and were probably generated in a compressional to transpressional regime caused by an orthogonal to oblique convergence of the Izanagi Plate into the East Asian continental margin. On the other hand, Late Cretaceous ferroalloy, base-metal and precious-metal deposits in the Taebaeksan, Okcheon and Gyeongsang basins occurred as vein, replacement, breccia-pipe, porphyry-style and skarn deposits. Diverse mineralization styles represent a spatial and temporal distinction between the proximal environment of sub-volcanic activity and the distal to transitional condition derived from volcanic environments. However, Cu (-Au) or Fe-Mo-W deposits are proximal to a magmatic source, whereas polymetallic or precious-metal deposits are more distal to transitional. Strike-slip faults and caldera-related fractures together with sub-volcanic activity are associated with major faults reactivated by a northward (oblique) to northwestward (orthogonal) convergence, and have played an important role in the formation of the Cretaceous Au-Ag lode deposits (ca. 110-45 Ma) under a continental arc setting. The temporal and spatial distinctions between the two typical Mesozoic deposit styles in Korea reflect a different thermal episodes (i.e., late orogenic and post-orogenic) and ore-forming fluids related to different depths of emplacement of magma (i.e., plutonic and sub-volcanic) due to regional changes in tectonic settings.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.