• Journal of the Korean Society of Manufacturing Process Engineers
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• v.4 no.4
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• pp.34-38
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• 2005

This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost IR sensor. System prices are continuing to drop, and swelling production volume will soon drive process substantially lower. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control. This paper presents the design, fabrication, and the behavior of cantilever for thermomechanical sensing.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.9-11
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• 1993

This paper decribed the development of Thermal Imaging Oservation System(TIOS) using the serial-parallel scan method. The detectors scan five lines at a time. These are put into serial order by electronic scan converter. Digital memory and high speed multiplexer are used for the serial conversion instead of charge coupled devices. As a result, thermal imaging system be presented with exellent performance which MRTD value is less than $0.5^{\circ}K$ at 7.5 cycles/mm.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.543-545
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• 1993

This paper decribed the development of Thermal Imaging Oservation System(TIOS) using the serial-parallel scan method. The detectors scan five lines at a tine. These are put into serial order by electronic scan converter. Digital memory and high speed multiplexer are used for the serial conversion instead of charge coupled devices. As a result, thermal imaging system be presented with exellent performance which MRTD value is less than $0.5^{\circ}K$ at 7.5 cycles/mm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2311-2317
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• 2011

In this paper, we study the temperature change of a ${\mu}$-bolometer focal plane array with a capacitive transimpedance amplifier bias cancellation circuit. Thermal analysis is essential to understand the performance of a ${\mu}$-bolometer focal plane array, and to improve the temperature stability of a focal plane array characteristics. In this study, the thermal analyses of a ${\mu}$-bolometer and its two reference detectors are carried out as a function of time. The analyses are done with the $30{\mu}m$ pitch $320{\times}240$ focal plane array operating of 60 Hz frame rate and having a columnwise readout. From the results, the temperature increase of a ${\mu}$-bolometer in FPA by an incident IR is estimated as $0.689^{\circ}C$, while the temperature increase by a pulsed bias as $7.1^{\circ}C$, which is about 10 times larger than by IR. The temperature increase of a reference detector by a train of bias pulses may be increased much higher than that of an active ${\mu}$-bolometer. The suppression of temperature increase in a reference bolometer can be done by increasing the thermal conductivity of the reference bolometer, in which the selection of thermal conductivity also determines the range of CTIA output voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.781-790
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• 2001

The effects of silicon substrate thickness on the performance of thin film PZT IR detectors are theoretically and experimentally investigated. Theoretical analyses show that the pyroelectric current responsivity of a detector without a silicon substrate is about two orders higher than that of a detector with a 450${\mu}{\textrm}{m}$ thick silicon substrate. At a fixed chopping frequency of 100Hz, the pyroelectric current responsivity decreases exponentially with increasing silicon substrate thickness up to 50${\mu}{\textrm}{m}$, and above 50${\mu}{\textrm}{m}$ the decreasing rate become slow. The thinner the silicon substrate is, the less the thermal loss by conduction is , and thus the higher responsivity is resulted. To verify the theoretical analyses, micromachined PZT thin film IR detectors with different silicon substrate thicknesses are fabricated and characterized. The theoretical and experimental results show the similar tendencies for all silicon substrates with varying thickness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.53.2-53.2
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• 2014

IGRINS, the Immersion GRating INfrared Spectrometer, is a near-infrared wide-band high-resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. IGRINS employs three HAWAII-2RG focal plane array (FPA) detectors. The mechanical mounts for these detectors serves a critical function in the overall instrument design: Optically, they permit the only positional compensation in the otherwise "build to print" design. Thermally, they permit setting and control of the detector operating temperature independently of the cryostat bench. We present the design and fabrication of the mechanical mount as a single module. The detector mount includes the array housing, a housing for the SIDECAR ASIC, a field flattener lens holder, and a support base. The detector and ASIC housing will be kept at 65 K and the support base at 130 K. G10 supports thermally isolate the detector and ASIC housing from the support base. The field flattening lens holder attaches directly to the FPA array housing and holds the lens with a six-point kinematic mount. Fine adjustment features permit changes in axial position and in yaw and pitch angles. We optimized the structural stability and thermal characteristics of the mount design using computer-aided 3D modeling and finite element analysis. Based on the computer simulation, the designed detector mount meets the optical and thermal requirements very well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.817-820
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• 2002

Amorphous selenium based flat panel detectors convert incident x-ray to electric signal directly. Flat panel detectors gain more interest real time medical x-ray imaging. TFT array and electric readout circuits are used in this paper offered by LG.Philips.LCD. Detector is based on a $1536{\times}1280$ array of a-Si TFT pixels. X-ray conversion layer(a-Se) is deposited upper TFT array with a $400{\mu}m$ by thermal deposition technology. Thickness uniformity of this layer is made of thickness control system technology$({\leq}5%)$. Each $139{\mu}m{\times}139{\mu}m$ pixel is made of thin film transistor technology, a storage capacitor and collecting electrode having geometrical fill factor of 86%. This system show dynamic performance. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.93-100
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• 1998

Pyoelectric infrared detectors based on La-modified PbTiO3 (PLT) thin films have been fabricated by RF magnetron sputtering and micromachining technology. The detectors form Pb$_{1-x}$ La$_{x}$Ti$_{1-x}$ O$_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal struture that no poling trealization for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polyimide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively eteched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of 8.5*10$^{8}$ cm..root.Hz/W at room temperature and it is about 100 times higher than the case of micromachining technology is not used. a sensing system that detects the position as well as the existence of a human body is realized using the array sensor.sor.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.