• Title/Summary/Keyword: thermal contact

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Co-firing Optimization of Crystalline Silicon Solar Cell Using Rapid Thermal Process (급속 열처리 공정을 이용한 결정질 실리콘 태양전지의 전극 소결 최적화)

  • Oh, Byoung-Jin;Yeo, In-Hwan;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.3
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    • pp.236-240
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    • 2012
  • Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.

Study on the Thermal Degradation Properties of Epoxy Resin for the Cast Resin Transformer (몰드변압기용 에폭시 수지의 열 열화 특성에 관한 연구)

  • Nam, K.D.;Jung, J.I.;Huh, C.S.
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1572-1574
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    • 2000
  • In this paper, study on the properties of the thermal degradated epoxy resin which is used in cast resin transformer is performed to investigate the problems of the decreasing insulation characteristics and crack in the cast resin transformer. In the test, contact angle, weight loss, surface resistivity and relative dielectric constant are measured. As the results of the above measurements, the epoxy resin has increased to 150$^{\circ}C$ in the contact angle and surface resistivity but at the above 150$^{\circ}C$ the values have decreased. The relative dielectric constants have increased in the thermal treated samples with the degradation temperature. Consequently, the insulation properties of the epoxy resin which is used in cast resin transformer have increased by the 150$^{\circ}C$ but decreased in the above 150$^{\circ}C$.

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A Study on the Surface Degradation Phenomena and Electrical Properties of Polymer Composite Materials (고분자 복합재료의 표면 열화 현상과 전기적 특성에 관한 연구)

  • Park, Jae-Sae;Lim, Kyung-Bum
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.75-78
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    • 2002
  • In this paper, we investigated the change of wettability, surface potential decay and surface resistivity caused by thermal-treated and plasma-treated FRP respectively for finding out the influence of electrical characteristics on the surface of polymer composites. For the change of wettability, the contact angle of thermal-treated specimen with the high temperature of 200$^{\circ}C$ increased. But that of plasma-treated specimen decreased. The characteristic of surface potential decay shows the tendency of the remarkable decrease on plasma-treated specimens, but no difference on thermal-treated specimen compared with untreated one. Also, for the surface resistivity, it shows the same trend compared with the change of contact angle. We can conclude that the degradation phenomena of epoxy surface are dominated by the induction of hydrophilicity and hydrophobicity.

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Degradation Properties of Epoxy Resin Used in Indoor (옥내용 에폭시 수지의 열화 특성)

  • 남기동;정중일;연복희;허창수;박영두
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.57-60
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    • 2000
  • In this paper, study on the properties of the thermal degradated epoxy resin which is used in indoor insulation apparatus is performed to investigate the problems of the decreasing insulation characteristics and crack in the indoor insulation apparatus. As a parameter of variation, SEM, contact angle, surface resistivity, relative dielectric constant and weight loss are measured. As the results of the above measurements, the contact angle and surface resistivity of the epoxy resin has increased to 200$^{\circ}C$ in but at the above 200$^{\circ}C$ the values have decreased. The relative dielectric constants the thermal treated samples have increased on with the temperature increase. We find the volatile components of the epoxy resin compound has disappeared during thermal degradation by SEM. The insulation properties of the epoxy resin have increased by the 200$^{\circ}C$ but decreased in the above 200$^{\circ}C$.

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Analysis and hazard evaluation of heat-transfer fluids for the direct contact cooling system

  • Hong, Joo Hi;Lee, Yeonhee;Shin, Youhwan;Karng, Sarngwoo;Kim, Youngil;Kim, Seoyoung
    • Analytical Science and Technology
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    • v.19 no.4
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    • pp.323-332
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    • 2006
  • This paper discusses several low-temperature heat-tranfer fluids, including water-based inorganic salt, organic salt, alcohol/glycol mixtures, silicones, and halogenated hydrocarbons in order to choose the best heat-transfer fluid for the newly designed direct contact refrigeration system. So, it contains a survey on commercial products such as propylene glycol and potassium formate as newly used in super market and food processing refrigeration. The stability of commercial fluids at the working temperature of $-20^{\circ}C$ was monitored as a function of time up to two months. And organic and inorganic compositions of candidate fluids were obtained by analytical instruments such as ES, XRF, AAS, ICP-AES, GC, and GC-MS. Analysis results indicate that commercial propylene glycol is very efficient and safe heat transfer fluids for the direct cooling system with liquid phase.

Investigation of Ni Silicide formation at Ni/Cu/Ag Contact for Low Cost of High Efficiency Solar Cell (고효율 태양전지의 저가화를 위한 Ni/Cu/Ag 전극의 Ni Silicide 형성에 관한 연구)

  • Kim, Jong-Min;Cho, Kyeong-Yeon;Lee, Ji-Hun;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.230-234
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    • 2009
  • It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

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Investigation of Device Characteristics on the Mechanical Film Stress of Contact Etch Stop Layer in Nano-Scale CMOSFET (Nano-Scale CMOSFET에서 Contact Etch Stop Layer의 Mechanical Film Stress에 대한 소자특성 분석)

  • Na, Min-Ki;Han, In-Shik;Choi, Won-Ho;Kwon, Hyuk-Min;Ji, Hee-Hwan;Park, Sung-Hyung;Lee, Ga-Won;Lee, Hi-Deok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.57-63
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    • 2008
  • In this paper, the dependence of MOSFET performance on the channel stress is characterized in depth. The tensile and compressive stresses are applied to CMOSFET using a nitride film which is used for the contact etch stop layer (CESL). Drain current of NMOS and PMOS is increased by inducing tensile and compressive stress, respectively, due to the increased mobility as well known. In case of NMOS with tensile stress, both decrease of the back scattering ratio ($\tau_{sat}$) and increase of the thermal injection velocity ($V_{inj}$) contribute the increase of mobility. It is also shown that the decrease of the $\tau_{sat}$ is due to the decrease of the mean free path ($\lambda_O$). On the other hand, the mobility improvement of PMOS with compressive stress is analyzed to be only due to the so increased $V_{inj}$ because the back scattering ratio is increased by the compressive stress. Therefore it was confirmed that the device performance has a strong dependency on the channel back scattering of the inversion layer and thermal injection velocity at the source side and NMOS and PMOS have different dependency on them.