• 제목/요약/키워드: thermal activation

검색결과 786건 처리시간 0.027초

수소 기체에 의한 Al/Pd 박막의 전기 특성 변화 (Electrical Characteristic Change of Al/Pd Film by Hydrogen Gas)

  • 조영신
    • 한국수소및신에너지학회논문집
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    • 제16권4호
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    • pp.386-390
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    • 2005
  • Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Electrical resistance change due to hydrogen absorption and desorption was measured by four point measurement method. The sample was activated by hydrogen absorption and desorption cycling at room temp. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temp. The resistance change ratio was decreased to 12 % with increasing hydrogen pressure in contrast to normal metal behavior. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

바이오매스 연료의 연소 특성 실험 (A Experiment of Combustion Behavior of Biomass Fuels)

  • 김학덕;김영대;송주헌
    • 한국수소및신에너지학회논문집
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    • 제29권5호
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    • pp.503-511
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    • 2018
  • There have been many studies of combustion in the circulating fluidized bed. However, little study is available for combustion of wood pellet together fed with wood chip. The mixed ratio of two fuels is an useful information when thermal power company would receive the Renewable Energy Portfolio Standard (RPS) from government. In this study, the combustion behavior and kinetics of such biomass fuels are evaluated using fluidized bed reactor and thermogravimetric analyzers. The mixing ratio of wood chip relative to wood pellet was varied at different temperatures. The results show that a combustion reactivity changed significantly at the wood chip mixing ratio of 40%, particularly at low temperature condition.

주위온도 변화에 따른 어분의 자연발화에 관한연구 (A Study on Autoignition of Fish Meal with Change of Ambient Temperature)

  • 목연수;최재욱
    • 한국안전학회지
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    • 제7권1호
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    • pp.47-56
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    • 1992
  • Spontaneous ignition charactenstics for fish meal were observed by performing experiments at constant ambient temperature and varying the ambient temperature sinusoidally. As the results of the experiments at a constant ambient temperature, the critical spontaneous ignition temperature of the sample for large, intermediate and small vessels was 170.5$^{\circ}C$, 177.5$^{\circ}C$ and 188.5$^{\circ}C$, respectively. The critical spontaneous ignition temperature decreased as the sample vessel size increased. Apparent activation energy of used fish meal calculated from the Frank-Kamenetskii's thermal ignition theory was 37.60Kcal/mol. In case of varying the ambient temperature sinusoidally, the amplitudes of temperature were 1$0^{\circ}C$, 2$0^{\circ}C$ and 3$0^{\circ}C$ respectively with the period in each amplitude 1hr, 2hrs and 3hrs. The results showed that the critical spontaneous ignition temperatures at the varied amplitudes of temperature were lower than that at the constant anbient temperature and increased as the amplitude increased. At the same amplitude, the critical spontaneous ignition temperature increased with the period.

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암모니아 식각 가스 도입에 의한 고순도 탄소나노튜브의 합성 (Carbon Nanotube Synthesis with High Purity by Introducing of NH3 Etching Gas)

  • 이선우;이붕주
    • 전기학회논문지
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    • 제62권6호
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    • pp.782-785
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    • 2013
  • Multi-walled carbon nanotubes were synthesized on Ni catalyst using thermal chemical vapor deposition. By introducing ammonia gas during the CNT synthesis process, clean and vertically aligned CNTs without impurities could be prepared. As the ammonia gas increased a partial pressure of hydrogen in the mixed gas during the CNT synthesis process, we could control the CNT synthesis rate appropriately. As the ammonia gas has an etching ability, amorphous carbon species covering the catalyst particles were effectively removed. Therefore catalyst particles could maintain their catalytic state actively during the synthesis process. Finally, we could obtain clean and vertically aligned CNTs by introducing $NH_3$ gas during the CNT synthesis process.

저온 제작 다결정 실리콘 박막 트랜지스터의 off-current메카니즘에 관한 연구 (A study on the off-current mechanism of poly-Si thin film transistors fabricated at low temperature)

  • 진교원;김진;이진민;김동진;조봉희;김영호
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.1001-1007
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    • 1996
  • The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

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Al/Pd 박막의 수소 흡수 특성 (Hydrogen Absorption Characteristics of Al/Pd Film)

  • 조영신
    • 한국수소및신에너지학회논문집
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    • 제17권2호
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    • pp.234-240
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    • 2006
  • Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Hydrogen absorption of Al/Pd film was measured by quartz crystal microbalance(QCM) method at room temperature. The sample was activated by hydrogen absorption and desorption cycling at room temperature. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temperature. Hydrogen concentration reached up to 25% at $5{\sim}10$ torr. But at high pressure the concentration decreased. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

하이드라진의 분해특성 연구 (A study on Decomposition Characteristics of Hydrazine)

  • 김상대;안현경;윤형준;이인형
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2004년도 추계학술대회
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    • pp.255-258
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    • 2004
  • Hydrazine is a weak base and strong reducing agent in the aqueous solution and is primarily utilized as a high-energy rocket propellant and an oxygen scavenger in boiler or feedwater. The objective of this study was to investigate the physicochemical properties and reactions of hydrazine and the catalytic and thermal decomposition by the temperature change. Hydrazine was fast decomposed with the catalyst of lower activation energy and at the higher temperature.

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CoSi$_2$를 As의 확산원으로 형성한 매우 얇은 n+/p 접합의 전기적 특성 (Electrical Characteristics of Ultra-Shallow n+/p Junctions Formed by Using CoSi$_2$ as Diffusion Source of As)

  • 구본철;정연실;심현상;배규식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.242-245
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    • 1997
  • Co single layer and Co/Ti used to form a CoSi$_2$ contact. We fabricated the n+/p diodes with this CoSi$_2$ contact as diffusion source of As. The diodes wish CoSi$_2$ formed by Co/ri bilayer had more Bo7d electrical characteristics than CoSi$_2$ formed by Co single layer. This shows that the flatness of interface which is a parameters to affect the diodes\` electrical characteristics. And the electrical characteristics of diodes are more good when the second thermal activation processing temperature was low as much as 50$0^{\circ}C$ than the temperature high over than 80$0^{\circ}C$, it was thought as that the silicide was degradated at high temperature.

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MOVPE 단결정층 성장법 III. 원자층 성장법 (Metal-Organic Vapor Phase Epitaxy III. Atomic Layer Epitaxy)

  • 정원국
    • 한국표면공학회지
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    • 제23권4호
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    • pp.197-207
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    • 1990
  • Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

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등온 DSC를 이용한 고에너지 물질의 정밀 반응 모델 기법 개발 (Kinetics analysis of energetic material using isothermal DSC)

  • 김유천;박정수;권국태;여재익
    • 한국연소학회:학술대회논문집
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    • 한국연소학회 2015년도 제51회 KOSCO SYMPOSIUM 초록집
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    • pp.219-222
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    • 2015
  • The kinetic analysis of energetic materials using Differential Scanning Calorimetry (DSC) is proposed. Friedman Isoconversional method is applied to DSC experiment data and AKTS software is used for analysis. The frequency factor and activation energy are extracted as a function of product mass fraction. The extracted kinetic scheme does not assume multiple chemical steps to describe the response of energetic materials; instead, multiple set of Arrhenius factors are used in describing a single global step. The proposed kinetic scheme has considerable advantage over the standard method based on One-Dimenaionl Time to Explosion (ODTX). Reaction rate and product mass fraction simulation are conducted to validate extracted kinetic scheme. Also a slow cook-off simulation is implemented for validating the applicability of the extracted kinetics scheme to a practical thermal experiment.

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