• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.97-101
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• 1995

We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.151-160
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• 2001

The composition and the microstructure of the lead-tin alloy electrodeposited in a gluconate bath were invesitigated according to electrolysis conditions. The tin content of the lead-tin alloy electrodeposits increased with increasing current density and EDTA addition, while it decreased with increasing temperature and sodium gluconate concentration. The preferred orientation of the alloy deposits changed from the (220) plane through (200) to (200) + (111) planes with increasing cathode overpotential. The surface morphology of the films was closely related to both the preferred orientation and the alloy composition.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.88-95
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• 1991

The tin-lead alloy was electrodeposited in the low range of peak current density in order to investigate the change of composition and microstructure of them. The Pb content of alloy deposits, which was decreased with increasing average current density, was relatively lower than that of D.C. plated alloy deposit. The preferred orientation of alloy deposit was changed with increasing peak current density and the surface morphology of alloy deposits was closely related to the preferred orientation of them.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.240-244
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• 2000

The three-dimensional orientation distribution function of a conical shaped tungsten liner prepared by the thermo-mechanical forming process was analyzed by 1.525$\AA$ neutrons to carry out the Rietveld refinement. The pole figure data of three reflections, (110)(220) and (211) were measured. The orientation distribution functions for the normal and radial directions were calculated by the WIMV method. The inverse pole figures of the normal and radial directions were obtained from their orientation distribution functions. The Rietveld refinement was performed with the RIETAN program that was slightly modified for the description of preferred orientation effect. We could successfully do the Rietveld refinement of the strongly textured tungsten liner by applying the pole density of each reflection obtained from the inverse pole figure to the calculated diffraction pattern. The correction method of preferred orientation effect based on the inverse pole figures showed a good improvement over the semi-empirical texture correction based on the direct usage of simple empirical functions.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.2
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• pp.91-97
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• 2000

The structure and mechanical properties of TiN and TiCN thin films deposited on STD61 steel substrates by the RF-sputtering methods has been studied by using XPS, XRD, micro-hardness tester, scratch tester, and wear-resistance tester. XPS results showed that the TiCN thin film formed with chemical bonding state. The TiN thin films grew with (111) orientation having the lowest strain energy by compressive stress, whereas the TiCN thin films grew with both (111) and (200) orientation, but (200) orientation having the lowest surface energy becomes dominant as carbon contents increase. The pre-etching treatment of substrate did not affect on the preferred orientation of thin films, but it played an important role in improving mechanical properties of thin films such as the hardness, adhesion and wear- resistance. Especially, the TiCN thin films showed the superior wear resistances due to high hardness and low friction coefficient compared with TiN thin films.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.121-125
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• 2004

Nickel oxide (NiO) thin films were deposited on Si(100) substrates at room temperature by RF magnetron sputtering from a NiO target. The effects of plasma gas and RF power on the crystallographic orientation and surface morphology of the NiO films were investigated. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were employed to characterize the deposited film. It was found that the type of plasma gases affected the crystallographic orientation, deposition rate, surface morphology, and crystallinity of NiO films. Highly crystalline NiO films with (100) orientation were obtained when it was deposited under Ar atmosphere. On the other hand, (l11)-oriented NiO films with poor crystallinity were deposited in $O_2$. Also, the increase in RF power resulted in not only higher deposition rate, larger grain size, and rougher surface but also higher crystallinity of NiO films.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.399-406
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• 1996

The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.567-571
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• 2008

The properties of a grown film by the chemical vapor deposition process depend on the deposition temperature because the deposition mechanism of the CVD film is controlled by the deposition temperature. The preferred orientation of the zrC film changed from (111) to (220) or (200) with an increase of the deposition temperature. The grain size of the ZrC film changes from $0.8{\mu}m$ to $2.5{\mu}m$ in the range of 1350 to $1500^{\circ}C$. The hardness of the deposited ZrC film depended on the preferred orientation and the grain size. The hardness of the ZrC film deposited at $1400^{\circ}C$ was 31 GPa.