• ETRI Journal
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• 제27권4호
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• pp.433-438
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• 2005

We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of $5 {\mu}m$, and a width of $50{\mu}$ and a length of $800 {\mu}m$. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was $170 {\mu}m$, and an annealing process was performed for 20 min at $500^{\circ}C$. The contact resistance of the newly fabricated probe card was less than $2{\Omega}$, and its lifetime was more than 20,000 turns.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.749-755
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• 2007

Recently, novel MEMS probe cards can support reliable wafer level chip test with high density probing capacity. However, manufacturing cost and process complexity are crucial weak points for low cost mass production. To overcome these limitations, we have developed micro spring structured MEMS probe card. For fabrication of micro spring module, a wire bonder and electrolytic polished gold wires are used. In this case, stringent tension force control is essential to guarantee the low level contact resistance of micro spring for reliable probing performance. For this, relation between tension force of fabricated probe card and contact resistance is characterized. Compare to conventional probe cards, developed MEMS probe card requires fewer fabrication steps and it can be manufactured with lower cost than other MEMS probe cards. Also, due to the small contact scratch patterns, we expect that it can be applied to bumping types chip test which require higher probing density.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권8호
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• pp.382-386
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• 2001

Presently, typical maximum probe spacing of soil resistivity survey(Wenners 4 pin method) is 20 m in case of 154 K substation grounding design of KEPCO. This paper examined the effects of maximum probe spacing of wenner method on the equivalent soil modeling and the accuracy of grounding resistance measurement by comparing the calculated FOP(Fall-of-Potential) curves of various soil models with the measured one at 154kV H substation. The comparison results showed that the inaccurate estimation of deep soil resistivity, which is caused from the short probe spacing of soil resistivity survey, can produce large errors on measurement of grounding resistance. In this paper a quantitative analysis of FOP at H substation has been presented.

• 한국지반공학회논문집
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• 제24권8호
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• pp.25-34
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• 2008

연약 지반의 거동 특성 평가를 위하여 전단파 속도와 전기저항을 측정할 수 있는 새로운 압밀셀을 개발하였다. 전단파의 발진과 수신을 위한 벤더엘리먼트는 압밀셀의 상 하부판 및 벽면에 설치하였다. 국부적인 간극비 변화를 평가하기 위하여 이중 쐐기 형식의 전기저항 탐침을 적용하였다. 벤더 엘리먼트와 전기저항 탐침은 나일론 재질의 스크류 안에 고정하였다. 나일론 재질의 스크류는 압밀셀과의 임피던스 차이로 인하여 압밀셀을 통한 파의 직접적 전달을 최소화하며, 고장난 벤더 엘리먼트와 전기저항 탐침을 쉽게 교환하게 해준다. 전기저항-대수 시간 곡선의 기울기 및 전단파 속도의 변화로부터 일차 압밀 시간을 평가하였다. 교란 효과가 적을 경우, 입자 배열은 전단파 속도에 영향을 미치며 이로부터 흙의 고유 이방성을 평가할 수 있었다. 압밀 실험동안 침하량으로 산정한 간극비와 전기저항으로부터 계산된 간극비는 거의 유사한 것으로 나타났다. 본 연구는 전단퐈 속도와 전기저항이 일차 압밀, 고유 이방성, 간극비 등 연약 지반의 압밀 특성 파악을 위한 보완적인 정보를 제공해 줌을 보여준다.

• 조명전기설비학회논문지
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• 제15권2호
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• pp.97-104
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• 2001

본 논문에서는 전위강하법에 의한 접지저항 측정시 전위보조전극 위치의 영향에 대하여 기술하였다. 전위강하법에서 접지저항은 이론적으로 전위보조전극을 피측정 접지전극과 전류보조전극이 이루는 일직선상에 위치시킬때 61.8[%]법칙을 적용하여 측정한다. 하지만 측정현장의 사정상 전위보조전극의 위치를 피측정 접지전극과 전류 보조전극이 이루는 일직선과 어느 정도의 각도를 가지도록 시설하여 접지저항을 측정하게 될 경우에 측정오차가 발생하게 되고 보정이 필요하다. 본 연구에서의 측정대상 전극은 길이 2.4 [m]의 봉형 접지전극으로 하였으며, 피측정 접지전극, 전위보조전극, 전류보조전극이 일직선상에 놓이지 않은 상태에서 접지저항을 측정하면 측정값은 항상 (-)의 오차를 나타내었고, 이들 전극이 이루는 각도가 증가함에 따라 측정 오차도 증가하였다.

• 전기학회논문지
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• 제60권7호
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• pp.1434-1437
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• 2011

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1874-1876
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• 2000

In this paper, the effects of the positions of the current probe on the measurements of the ground resistanc, and potential gradients with fall-of-potential method are described, and the testing techniques to minimize the measuring errors are proposed. The fall-of-potential method is theoretically based on the potential and current measuring principle and the measuring error is primarily caused by the position of the measuring auxiliary probes. The ground resistance is calculated by applying the 61.8% lute using fall-of-potential method.

• 전기학회논문지
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• 제63권10호
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• pp.1417-1422
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• 2014

Using a parallel plate DC plasma system was prepared. Using this equipment, we investigated the basic discharge characteristics of DC argon plasma in terms of electron density, temperature, voltage and current waveforms and plasma potential. The effects of the electrode gap distance, input voltage, ballast resistance and pressure were measured using electrostatic probe. Plasma simulation using fluid approximation has been performed. External circuit effects was included in the simulation. Measured and calculated current voltage characteristics show similar tendencies.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.149-154
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• 2004

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

• 한국신뢰성학회지:신뢰성응용연구
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• 제7권1호
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• pp.23-29
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• 2007

Probe card is a test component which is to classify the known good die with electrical contact before the packaging in the ATE (automatic testing equipment). Conventional probe tip was mostly needle type, it has been difficult to meet with conventional type, because of decreasing chip size, pad to pad pitch and pads size increasingly. For that reason, probe cards using MEMS (micro electro mechanical system) technology have been developed for various semiconductor chips. In this paper, Area Array type MEMS Probe tip was designed,, fabricated, and characterized its mechanical and electrical properties. The authors found that good electrical characteristics under $1{\Omega}$ were acquired with gold (Au) and aluminium (Al) pad contact test over 0.5gf and 4gf respectively. And, contact resistance variation under $0.1{\Omega}$ were achieved with 100,000 times of repetition test. And, insertion loss (IS) for high frequency operation was ascertained over 300MHz at -3dB loss.